DSK EDB106S Silicon bridge rectifier Datasheet

Diode Semiconductor Korea
EDB101S --- EDB106S
VOLTAGE RANGE: 50 --- 400 V
CURRENT: 1.0 A
SILICON BRIDGE RECTIFIERS
FEATURES
DB-S
Rating to 400 V PRV
Surge overload rating to 30 Amperes peak
1± 0.1
7.9± 0.2
0.3
Reliable low cost construction utilizing molded
6.4± 0.1
8.3± 0.3
6.3± 0.2
Ideal for printed circuit board
1.2± 0.3
10± 0.6
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
8.3± 0.1
Plastic material has UL flammability classification
94V-O
2.5± 0.15
5± 0.2
Polarity symbols molded on body
Weight: 1.0 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EDB
101S
EDB
102S
EDB
103S
EDB
104S
EDB
105S
EDB
106S
UNITS
Maximum recurrent peak reverse voltage
VRRM
50
100
150
200
300
400
V
Maximum RMS voltage
VRMS
35
70
105
140
210
280
V
Maximum DC blocking voltage
V DC
50
100
150
200
300
400
V
Maximum average forw ard
Output current
@TA =55
IF(AV)
1.0
A
IFSM
30.0
A
VF
1.0
V
10.0
μA
1.0
mA
50
nS
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 1.0 A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA=100
IR
Maximum reverse recovery time (NOTE 1)
trr
Typical junction calacitance
CJ
(NOTE 2)
Operating junction temperature range
Storage temperature range
15
10
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 150
NOTE: 1. Test conditions: I F=0.5A, I R=-1.0A, I RR=-0.25A.
2. Measured at 1 MHz and applied rev erse v oltage of 4.0 v olts.
pF
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EDB101S --- EDB106S
Diode Semiconductor Korea
50
N 1.
10
N 1.
trr
+0.5A
D.U.T.
(+)
25VDC
(approx)
(-)
OSCILLOSCOPE
(NOTE1)
1
NONINDUCTIVE
0
PULSE
GENERATOR
(NOTE2)
-0.25A
-1.0A
1cm
NOTES:1.RISE TIME =7ns MAX. INPUT IMPEDANCE=1MΩ.22pF
2.RISE TIME=10ns MAX. SOURCE IMPEDANCE=5OΩ
10
TJ=100
1.0
TJ=25
.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
60
0
0
25
50
75
100
125
150
)
10
1 .0
0 .1
.0 1
TJ=125
P u lse W id th
=300u S
.0 0 1
0
0 .2
0 .4
0 .6
0 .8
1 .0
1 .2 1 .4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
8.3ms Single Half Sine Wave
TJ=25
40
30
20
10
1
5
10
50
NUMBER OF CYCLES AT 60Hz
JUNCTION CAPACITANCE, (pF)
200
50
AMPERSE
PEAK FORWARD SURGE CURRENT,
1
FIG.6 -- TYPICAL JUNCTION CAPACITANCE
FIG.5 -- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
0
Single phaes
half wave 60Hz
resistive or
inductive load
FIG.4 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,
AMPERSE
TJ=150
AMPERSE
INSTANTANEOUS REVERSE CURRENT,
100
2
AMBIENT TEMPERATURE (
SET TIME BASE FOR
10 ns /cm
FIG.3 -- TYPICAL REVERSE CHARACTERISTICS
0.1
FIG.2 -- TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT,
AMPERSE
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
TJ=25
100
60
40
20
EDB101S-EDB104S
10
6
EDB105S-EDB106S
4
2
1
.1
1
4
10
100
100
REVERSE VOLTAGE, VOLTS
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