NEC NX5323EH 1 310 nm for ftth pon application ingaasp mqw-fp laser diode Datasheet

DATA SHEET
LASER DIODE
NX5323EH
1 310 nm FOR FTTH PON APPLICATION
InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured
Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is
designed for application up to 1.25 Gb/s.
APPLICATION
• FTTH PON (B-PON, G-PON, GE-PON 10 km) system
FEATURES
• Optical output power
Po = 13.0 mW
• Low threshold current
lth = 7 mA
• Differential Efficiency
ηd = 0.5 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package
φ 5.6 mm
• Focal point
6.35 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PL10741EJ01V0DS (1st edition)
Date Published July 2009 NS
Printed in Japan
2009
NX5323EH
PACKAGE DIMENSIONS (UNIT: mm)
110°±2°
(0.4)
BOTTOM VIEW
1
2
*2
*1
15.0±1.0 1.2±0.1
(3.0)
*2
6.35±0.5
Focal Point
Δx = ±300 μ m MAX.
Δy = ±300 μ m MAX.
PIN CONNECTIONS
1 (Case)
Reference
Plane
LD
4
2
4– φ 0.45
φ 2.0
*1 Focal Point: A point to get maximum optical output power from fiber.
*2 ( ) indicates nominal dimension.
2
4
3
φ 2.0
3.87±0.3
1.0±0.1
(0.4)*2
φ 5.6+0.00
–0.03
*2
(φ 4.2)
(φ 3.55)*2
Data Sheet PL10741EJ01V0DS
PD
3
NX5323EH
ORDERING INFORMATION
Part Number
NX5323EH
Package
4-pin CAN with ball lens cap
Remarks 1. The color of ball lens cap might be observed differently.
2. The hermetic test will be performed as AQL 1.0%.
Data Sheet PL10741EJ01V0DS
3
NX5323EH
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Optical Output Power
Po
20
mW
Forward Current of LD
IF
150
mA
Reverse Voltage of LD
VR
2.0
V
Forward Current of PD
IF
10
mA
Reverse Voltage of PD
VR
15
V
Operating Case Temperature
TC
−40 to +85
°C
Storage Temperature
Tstg
−40 to +85
°C
Lead Soldering Temperature
Tsld
350 (3 sec.)
°C
Relative Humidity (noncondensing)
RH
85
%
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
Parameter
Symbol
Operating Voltage
Vop
Threshold Current
Ith
Differential Efficiency
ηd
Center Wavelength
λC
Conditions
MIN.
Po = 13.0 mW
0.40
Po = 13.0 mW, RMS (−20 dB)
TYP.
MAX.
Unit
1.1
1.5
V
7
15
mA
0.50
1 272
W/A
1 356
nm
1.5
2.3
nm
TC = −40 to +85°C
Spectral Width
σ
Po = 13.0 mW, RMS (−20 dB)
TC = −40 to +85°C
Rise Time
tr
20-80%
0.15
0.3
ns
Fall Time
tf
80-20%
0.15
0.3
ns
Monitor Current
Im
VR = 1.5 V, Po = 13.0 mW
Monitor Dark Current
ID
VR = 10 V
Monitor PD Terminal Capacitance
Ct
VR = 10 V, f = 1 MHz
Fiber Coupling Power
Pf
Po = 13.0 mW, Optimized Coupling with
Focal Distance
4
Df
8 degree angled SMF
Data Sheet PL10741EJ01V0DS
100
μA
200
5
100
nA
20
pF
2.0
5.85
6.35
mW
6.85
mm
NX5323EH
REFERENCE
Document Name
Opto-Electronics Devices Pamphlet
Document No.
PX10160E
Data Sheet PL10741EJ01V0DS
5
NX5323EH
• The information in this document is current as of July, 2009. The information is subject to change
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types are available in every country. Please check with an NEC Electronics sales representative for
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M8E0904E
6
Data Sheet PL10741EJ01V0DS
NX5323EH
SAFETY INFORMATION ON THIS PRODUCT
DANGER
SEMICONDUCTOR LASER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
Warning
Laser Beam
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
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