Mitsubishi CM600HN-5F High power switching use insulated type Datasheet

MITSUBISHI IGBT MODULES
CM600HN-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
H
G
E
F
D
J
W - DIA. (4 TYP.)
K
y
P Q
E
C
E
x
N
M
L
G
C
B
A
R
U - THD.
(2 TYP.)
V -THD.
(2 TYP.)
S
T
Features:
ⵧ Low Drive Power
ⵧ Low VCE(sat)
ⵧ Discrete Super-Fast
Recovery
Free-Wheel Diodes
ⵧ High Frequency Operation
ⵧ Isolated Baseplate for Easy
Heat Sinking
C
E
E
G
Applications:
ⵧ UPS
ⵧ Forklift
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
108.0
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
one IGBT in a single configuration, with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat
sinking baseplate, offering simplified system assembly and thermal
management.
Dimensions
Inches
Millimeters
N
0.39
10.0
P
0.39
10.0
Ordering Information:
Example: Select the complete
nine digit module part number you
desire from the table below - i.e.
CM600HN-5F is a 250V (VCES),
600 Ampere Single IGBT Module.
A
4.25
B
3.66
C
0.63
16.0
Q
0.51
13.0
D
0.30
7.5
R
0.33
8.5
E
0.69
17.5
S
1.42
36.0 –0.5
F
1.14
29.0
T
1.02
25.8 –0.5
Type
Current Rating
Amperes
VCES
Volts (x 50)
G
0.79
20.0
U
M6 Metric
M6
CM
600
5
H
0.94
24.0
V
M4 Metric
M4
93.0±0.25
+1.0
+1.0
J
0.31
7.9
W
0.26
Dia. 6.5
K
0.24
6.0
X
0.79
20.0
L
2.44
62.0
Y
0.35
9.0
M
1.89
48.0
Mar.2002
MITSUBISHI IGBT MODULES
CM600HN-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol
Ratings
Units
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E Short)
VCES
250
Volts
Gate-Emitter Voltage (C-E Short)
VGES
±20
Volts
Collector Current (TC = 25°C)
Peak Collector Current (Tj ≤ 150°C)
IC
600
Amperes
ICM
1200
Amperes
Emitter Current** (TC = 25°C)
IE
600
Amperes
Peak Emitter Current**
IEM
1200
Amperes
Maximum Collector Dissipation (TC = 25°C)
Pc
1780
Watts
Mounting Torque, M6 Main Terminal
—
1.96 ~ 2.94
N·m
Mounting Torque, M6 Mounting
—
1.96 ~ 2.94
N·m
Mounting Torque, M4 Terminal
—
0.98 ~ 1.47
N·m
—
400
Grams
Viso
2500
Vrms
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 60mA, VCE = 10V
3.0
4.0
5.0
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
Gate Leakage Current
IC = 600A, VGE = 10V,
—
1.2
1.7**
Volts
IC = 600A, VGE = 10V, Tj = 150°C
—
1.1
—
Volts
Total Gate Charge
QG
VCC = 100V, IC = 600A, VGE = 10V
—
2200
—
nC
Emitter-Collector Voltage
VEC
IE = 600A, VGE = 0V
—
—
2.0
Volts
Min.
Typ.
Max.
Units
—
—
165
nF
—
—
7.5
nF
—
—
5.6
nF
—
—
1000
ns
—
—
4000
ns
—
—
1000
ns
—
—
500
ns
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
tr
td(off)
tf
Test Conditions
VGE = 0V, VCE = 10V
VCC = 100V, IC = 600A,
VGE1 = VGE2 = 10V, RG = 4.2Ω,
Resistive Load
Diode Reverse Recovery Time
trr
IE = 600A, diE/dt = -1200A/µs
—
—
300
ns
Diode Reverse Recovery Charge
Qrr
IE = 600A, diE/dt = -1200A/µs
—
9.5
—
µC
Thermal and Mechanical Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
—
—
0.07
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Free Wheel Diode
—
—
0.11
°C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
—
—
0.040
°C/W
Mar.2002
MITSUBISHI IGBT MODULES
CM600HN-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
1200
10
8
6
1000
VGE = 15V
5.5
800
600
5.25
400
5.0
200
4.5
1000
800
600
400
200
4.75
0
1
2
3
4
5
1.5
1.0
0.5
0
0
2
4
6
8
0
10
200
400
600
800
1000 1200
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
104
5
103
Tj = 25°C
IC = 600A
2
IC = 1200A
1
IC = 240A
5
10
102
15
0.8
1.0
1.2
1.4
1.6
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
REVERSE RECOVERY TIME, t rr, (ns)
VCC = 100V
VGE = ±10V
RG = 4.2Ω
Tj = 125°C
td(off)
td(on)
103
tf
101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
Coes
di/dt = -1200A/µsec
Tj = 25°C
t rr
Irr
101
101
102
EMITTER CURRENT, IE, (AMPERES)
101
102
GATE CHARGE, VGE
103
102
100
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
102
tr
102
101
100
10-1
1.8
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
104
Cies
102
Cres
101
0.6
0
0
CAPACITANCE, Cies, Coes, Cres, (nF)
3
103
101
103
20
IC = 600A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
4
VGE = 0V
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
Tj = 25°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 15V
Tj = 25°C
Tj = 125°C
0
0
SWITCHING TIME, (ns)
2.0
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
5.75
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
1200
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VCC = 50V
15
VCC = 100V
10
5
0
0
1
2
3
4
5
GATE CHARGE, QG, (nC)
Mar.2002
MITSUBISHI IGBT MODULES
CM600HN-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.07°C/W
100
10-1
10-2
10-3
10-3
10-2
10-1
TIME, (s)
100
101
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.11°C/W
100
10-1
10-2
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Mar.2002
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