ETL GMBT5089 N p n e p i t a x i a l p l a n a r t r a n s i s t o r Datasheet

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GM BT5089
NP N E PITAXI AL P L ANAR T RANS ISTO R
Description
The GMBT5089 is designed for low noise, high gain, general purpose amplifier applications.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
10
0
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Unit
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
30
Collector to Emitter Voltage
VCEO
25
V
Emitter to Base Voltage
VEBO
4.5
V
V
Collector Current
IC
50
mA
Total Power Dissipation
PD
225
mW
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
30
-
-
V
IC=100uA
BVCEO
25
-
-
V
IC=1mA
BVEBO
4.5
-
-
V
IE=10uA
-
-
50
nA
VCB=15V
BVCBO
ICBO
Test Conditions
IEBO
-
-
100
nA
VEB=4.5V
*VCE(sat)
-
-
500
mV
IC=10mA, IB=1mA
mV
IC=10mA, IB=1mA
*VBE(sat)
-
-
800
hFE1
400
-
1200
hFE2
450
-
hFE3
400
-
fT
50
Cob
-
-
VCE=5V, IC=0.1mA
VCE=5V, IC=1mA
-
VCE=5V, IC=10mA
-
MHz
4
pF
VCE=5V, IC=0.5mA, f=20MHz
VCB=5V, f=1MHz
*Pulse Test:Pulse Width <=380us, Duty Cycle <=2%
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Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165
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