HUASHAN HC143X Npn silicon transistor Datasheet

NPN DIGITAL T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HC143X
█ APPLICATIONS
Switching Circuit,Interface Circuit.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
T stg ——Storage Temperature………………………… -55~150℃
TO-92S
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………300mW
VCBO ——Collector-Base Voltage………………………………50V
1―Emitter,E
2―Collector,C
3―Base,B
VCEO ——Collector-Emitter Voltage……………………………50V
VE B O ——Emitter -Base Voltage………………………………5V
IC——Collector Current………………………………………100mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCBO
Collector-Base Breakdown Voltage
50
V
BVCEO
Collector-Emitter Breakdown Voltage
50
V
IC=10μA, IE=0
IC=0.1mA, IB=0
0.1
μA
VCB=40V, IE=0
0.5
μA
VCE=40V, IB=0
420
μA
VEB=5V, IC=0
ICBO
ICEO
Collector Cut-off Current
Collector Cut-off Current
IEBO
Emitter Cut-off Current
200
HFE
DC Current Gain
30
VCE(sat)
R1
R1/R2
fT
VCE=5V, IC=1mA
0.1
Collector- Emitter Saturation Voltage
VI(off) Input Off Voltage
VI(on) Input On Voltage
340
0.3
V
IC=10mA, IB=0.5mA
V
VCE=5V, IC=0.1mA
2.5
V
VCE=0.3V, IC=20mA
Kohm
0.3
Input Resistor
3.2
4.7
6.2
Resistance Ratio
0.42
0.47
0.52
Current Gain-Bandwidth Product
250
MHz
VCE=10V,IC=5mA
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