Renesas CT15SM-24 Mitsubishi insulated gate bipolar transistor general inverter - ups use Datasheet

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
ARY
N
I
M
I
L
CT15SM-24
.
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is
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tric lim
Notice parame
Som
PRE
GENERAL INVERTER • UPS USE
CT15SM-24
OUTLINE DRAWING
Dimensions in mm
4.5
15.9MAX.
1.5
5.0
r
4
2
20.0
φ 3.2
2
19.5MIN.
4.4
1.0
q
w
5.45
e
5.45
0.6
2.8
4
wr
¡VCES ............................................................................. 1200V
¡IC ......................................................................................... 15A
¡High Speed Switching
¡Low VCE Saturation Voltage
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
q
e
TO-3P
APPLICATION
AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls,
etc.
MAXIMUM RATINGS
Symbol
VCES
VGES
VGEM
IC
ICM
PC
Tj
Tstg
—
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Conditions
1200
±20
Unit
V
V
VCE = 0V
±30
15
30
250
–40 ~ +150
V
A
A
W
°C
–40 ~ +150
4.8
°C
g
Collector current
Collector current (Pulsed)
Maximum power dissipation
Junction temperature
Storage temperature
Weight
Ratings
VGE = 0V
VCE = 0V
Typical value
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
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Notice parame
Som
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CT15SM-24
GENERAL INVERTER • UPS USE
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
Symbol
Parameter
V (BR) CES
Collector-emitter breakdown voltage
Collector-emitter leakage current
IC = 1mA, VGE = 0V
VGE = ±30V, VCE = 0V
Gate-emitter leakage current
Gate-emitter threshold voltage
VCE = 1200V, VGE = 0V
IC = 1.5mA, VCE = 10V
IC = 15A, VGE = 15V
Limits
Test conditions
Unit
Min.
1200
—
—
Typ.
—
—
—
Max.
—
±0.5
1
VCE = 25V, VGE = 0V, f = 1MHz
4.5
—
—
—
6.0
2.7
1600
150
7.5
3.6
—
—
V
V
pF
pF
td (off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VCC = 600V, Resistance load,
IC = 15A, VGE = 15V, RGE = 20Ω
—
—
—
—
45
50
150
150
—
—
—
—
pF
ns
ns
ns
Rth (j-c)
Thermal resistance
Junction to case
—
—
250
—
—
0.50
ns
°C/W
IGES
ICES
VGE(th)
VCE(sat)
Cies
Coes
Cres
td (on)
tr
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
V
µA
mA
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE = 20V
15V
COLLECTOR CURRENT IC (A)
20
Tj = 25°C
16
11V
12
10V
8
4
0
9V
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
4
IC = 30A
15A
2
0
10A
0
4
8
12
16
20
GATE-EMITTER VOLTAGE VGE (V)
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
ARY
N
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ge.
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ecific ct to chan
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nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som
PRE
CT15SM-24
GENERAL INVERTER • UPS USE
VGE = 15V
Tj = 25°C
4
3
2
1
0
0
4
8
12
16
VCE = 10V
Tj = 25°C
16
12
8
4
0
20
8
12
16
20
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL)
SWITCHING TIME-COLLECTOR
CURRENT CHARACTERISTIC
(TYPICAL)
103
7
5
Cies
7
5
3
2
102
7
5
3 Tj = 25°C
2 VGE = 0V
Coes
3
tr
102
7
5
Cres
3
101 0
10
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
16
600V
12
8
4
40
60
80
GATE CHARGE Qg (nc)
100
2 3
5 7 101
2 3
5 7 102
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
100
TRANSIENT
THERMAL IMPEDANCE Zth (j–c)
VCC = 400V
20
Tj = 25°C
VCC = 600V
VGE = 15V
RG = 20Ω
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE
VS. GATE CHARGE CHARACTERISTIC
(TYPICAL)
24
0
td(on)
2
f = 1MHZ
20
tf
td(off)
2
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
4
GATE-EMITTER VOLTAGE VGE (V)
103
0
0
COLLECTOR CURRENT IC (A)
104
7
5
3
2
101
COLLECTOR CURRENT IC (A)
5
COLLECTOR CURRENT VS.
GATE EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL)
20
SWITCHING TIME (ns)
CAPACITANCE Cies, Coes, Cres (pF)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
7
5
3
2
10–1
7
5
7
5
3
2
3
2
10–2
10–2
7
5
7
5
3
2
3
2
10–3
10–3
10–5 2 3 5 710–4 2 3 5 710–3
PULSE WIDTH tw (s)
Feb.1999
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