Fairchild FVP12030IM3LEG1 Energy recovery Datasheet

PDP SPMTM
FVP12030IM3LEG1
Energy Recovery
Feature
General Description
• Use of high speed 300V IGBTs with parallel FRDs
It is an advanced smart power module(SPMTM) that Fairchild
has newly developed and designed to provide very compact
and optimized performance for the energy recovery circuit of
PDP driving system. It combines optimized circuit protection
and drive matched to low-loss and high speed IGBTs. Under
voltage lock-out protection function enhances the system reliability . The high speed built-in HVIC provides opto-couplerless
single power supply IGBT gate driving capability that futher
reduce the overall system size of PDP sustaining boards.
• Single-grounded power supply by means of built-in HVIC
• Sufficient current driving capability for IGBTs due to adding a
buffer
• Isolation rating of 1500Vrms/min.
• Low leakge current due to using an insulated metal substrates
Applications
• Energy Recovery Part of a PDP (Plasma Display Panel)
Package Outlines
Figure 1.
©2006 Fairchild Semiconductor Corporation
FVP12030IM3LEG1 Rev. A
1
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FVP12030IM3LEG1 Energy Recovery
March 2007
FVP12030IM3LEG1 Energy Recovery
Pin Configurations
Top View
Figure 2.
2
FVP12030IM3LEG1 Rev. A
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FVP12030IM3LEG1 Energy Recovery
Pin Descriptions
Pin Number
Pin Name
1
COML
Pin Descriptions
Low-side Signal Ground
2
VINL
Low-side Signal Input
3
VCCL
Low-side Supply Voltage for HVIC
4
VBL
Low-side Floating Supply Voltage for Buffer IC and IGBT Driving
5
GL
Low-side Gate
6
VSL
Low-side Floating Ground for Buffer IC and IGBT Driving
7
IGND
8
COMH
9
VINH
10
VCCH
11
VBH
IMS Ground
High-side Signal Ground
High-side Signal Input
High-side Supply Voltage for HVICg
High-side Floating Supply Voltage for Buffer IC and IGBT Driving
12
GH
High-side Gate
13
VSH
High-side Floating Ground for Buffer IC and IGBT Driving
14
CH
High-side IGBT Collector
15
EH
High-side IGBT Emitter
16
KH
High-side Diode Cathode
17
AL
Low-side Diode Anode
18
CL
Low-side IGBT Collector
19
EL
Low-side IGBT Emitter
3
FVP12030IM3LEG1 Rev. A
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FVP12030IM3LEG1 Energy Recovery
Internal Equivalent Circuit and Input/Output Pins (Bottom View)
(13) VSH
(12) GH
(11) VBH
(14) CH
HVIC
(10) VCCH
(9) VINH
(8) COMH
VCC
Buffer IC
VB
IN
VCC
OUT
COM
OUT
IN
VS
COM
COM
(15) EH
(7) IGND
(16) KH
(6) VSL
(5) GL
(4) VBL
(17) AL
HVIC
(3) VCCL
VCC
(2) VINL
(1) COML
IN
COM
Buffer IC
VCC
VB
(18) CL
OUT
IN
OUT
COM
VS
COM
(19) EL
Figure 3.
4
FVP12030IM3LEG1 Rev. A
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Symbol
C
= 25°C, Unless Otherwise Specified)
Parameter
Conditions
VCC
Control Supply Voltage
VBS
Control Bias Voltage
Applied between VBL - VSL, VBH - VSH
VIN
Input Signal Voltage
Applied between VINL-COML,VINH - COMH
Symbol
VCE
VRRM
VIN
IC
IF(AV)
Applied between VCCL-COML, VCCH - COMH
20
V
20
V
V
Rating
Units
Between CL to EL, Between CH to EH
VGH-EH=VGL-EL=0V , ICH=ICL=250µA
300
V
Between KH to EH, Between CL to AL
IAH=IAL=250µA
300
V
Between CH to EH, Between CL to EL
IAH=IAL=250µA
300
V
-0.3 to
VCC+0.3
V
Conditions
Peak Repetitive Reverse Voltage
Units
-0.3~17
Parameter
Collector to Emitter Voltage
Rating
Input Signal Voltage
VINL, VINH
Collector Current Continuous
Between CL to EL, Between CH to EH
120
A
Average Rectified Forward Current
Between EH to KH, Between AL to CL
per diode
30
A
Between EH to CH Between EL to CL
10
A
ICP
Pulsed Collector Current
Between CL to EL, Between CH to EH (Note1)
300
A
Between EH to KH, Between AL to CL(Note1)
300
A
IFP
Pulsed Diode Current
Between EH to CH Between EL to CL
per diode (Note1)
100
A
Notes :
1. Pulse Width = 100µsec, Duty = 0.1; half sine wave
*Icp limited by MAX Tj
Symbol
Parameter
Conditions
IGBT Dissipation
Pd
FRD Dissipation
Rating
Units
Tc=25°C per IGBT
117
W
Tc=100°C per IGBT
47
W
Tc=25°C per diode
109
W
Tc=100°C per diode
43
W
Tj
Operating Junction Temperture
-20 ~ 150
°C
TC
Module Case Operation Temperature
-20 ~ 125
°C
-40 ~ 125
°C
1500
Vrms
TSTG
VISO
Storage Temperature
Isolation Voltage
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to IMS substrate
Thermal Resistance
Symbol
Parameter
Conditions
Between CH to EH, Between CL to EL Per IGBT
Rth(j-c)
Junction to Case Thermal
Resistance
Max.
Units
-
1.07
°C/W
Between EH to KH, Between AL to CL
-
1.15
°C/W
Between CH to EH, Between CL to EL Per Diode
-
3.70
°C/W
5
FVP12030IM3LEG1 Rev. A
Min.
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FVP12030IM3LEG1 Energy Recovery
Absolute Maximum Ratings (T
C
Symbol
= 25°C, Unless Otherwise Specified)
Parameter
Conditions
Min.
Typ.
Max.
Units
IQCC
Quiescent VCC Supply
Current
VCC = 15V
VINL, VINH = 0V
VCCL-COML,
VCCH-COMH
-
-
100
µA
IQBS
Quiescent VBS Supply
Current
VBS = 15V
VINL, VINH= 0V
VBL- VSL, VBH- VSH
-
-
500
µA
10.1
11.3
12.5
V
10.5
11.7
12.9
V
Supply Circuit Under VoltDetection Level
age Protection
UVBSD
UVBSR
Reset Level
VIN(ON)
ON Threshold Voltage
VIN(OFF)
OFF Threshold Voltage
Symbol
VCE(SAT)
Parameter
IGBT Collector-Emitter
Saturation Voltage
Diode Forward Voltage
VF
tdON
tr
Switching Times
tdOFF
Applied between VINL-COML, ,VINH - COMH
tF
Condition
3.0
-
-
V
-
-
0.8
V
Min.
Typ.
Max.
Units
VCC = VBS = 15V
VIN = 5V
IC = 25A, TJ = 25°C
-
-
1.4
V
IC = 120A, TJ = 25°C
-
1.9
-
V
Between CL to AL
Between KH to EH
IF =30A, TJ = 25°C
-
-
1.4
V
Between EH to CH
Between EL to CL
IF =10A, TJ = 25°C
-
-
1.7
V
230
VCE=200V, VCC= VBS=15V
Ic = 20A
VIN = 0V ↔ 5V , Inductive Load
Tc = 25°C
(Note2)
ICES
IGBT Collector-Emitter
Leakage Current
IR
Diode Anode-Cathode
Leakage Current
VCE = 300V
-
Between CL to AL
Between KH to EH
VAnode-Cathode=300V
Between EH to CH
Between EL to CL
VAnode-Cathode=300V
-
ns
55
ns
270
ns
48
ns
-
-
250
µA
250
µA
250
µA
Notes :
2. tON and tOFF include the propagation delay time of internal drive IC. For the detailed information, please see Figure 4.
VIN
VIN
VCE
IC
td(off)
90% of IC
90% of IC
10% of IC
IC
td(on)
tf
VCE
10% of Ic
tr
Figure 4. Switching Time Definition
6
FVP12030IM3LEG1 Rev. A
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FVP12030IM3LEG1 Energy Recovery
Electrical Characteristics (T
FVP12030IM3LEG1 Energy Recovery
Typical Performance Characteristics
Figure 6. Typical Output Characteristics
Figure 5. Typical Output Characteristics
180
180
o
o
T C = 125 C
T C = 25 C
20V
15V
120
10V
12V
90
60
V G E =8V
15V
120
10V
90
V G E =8V
60
30
30
0
0
0
2
4
0
6
2
Collector-Em itter Voltage, V CE [V]
4
6
C ollector-E m itter V oltage, V C E [V ]
Figure 7. Typical Forward Voltage Drop
Figure 8. Typical Forward Voltage Drop
100
100
Between CL to AL
Between KH to EH
Between CL to EL
Between CH to EH
o
FORWARD CURRENT, IF [A]
TC = 100 C
o
Forward Current, IF [A]
12V
20V
150
Collector Current, IC [A]
Collector Current, IC [A]
150
TC = 25 C
10
1
0.1
0.0
0.5
1.0
1.5
o
TC = 125 C
o
TC = 25 C
10
o
TC = 75 C
1
0.1
0.2
2.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE. VF [V]
Forward Voltage, VF [V]
Figure 9. FBSOA
50µs
Collector Current, Ic [A]
100
Ic MAX (Pulsed)
100µs
1ms
10
1
0.1
0.01
0.1
Single Nonrepetitive
o
Pulse Tc=25 C
Curves must be derated
linearly with increase
in temperature
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
7
FVP12030IM3LEG1 Rev. A
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Parameter
Mounting Torque
Device Flatness
Conditions
Mounting Screw: - M3
Limits
Units
Min.
Typ.
Max.
0.51
0.62
0.72
N•m
0
-
+100
µm
-
13.4
-
g
Recommended 0.62N•m
Note Figure 5
Weight
(+)
(+)
Figure 10. Flatness Measurement Position
8
FVP12030IM3LEG1 Rev. A
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FVP12030IM3LEG1 Energy Recovery
Mechanical Characteristics and Ratings
FVP12030IM3LEG1 Energy Recovery
Detailed Package Outline Drawings
Figure 11.
9
FVP12030IM3LEG1 Rev. A
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when properly used in accordance with instructions for use
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Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
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First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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Rev. I24
10
FVP12030IM3LEG1 Rev. A
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FVP12030IM3LEG1 Energy Recovery
tm
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