FAIRCHILD KSC5047

KSC5047
KSC5047
Feature
• High Current Gain
• Low Collector Emitter Saturation Voltage
TO-3P
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
100
Units
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
15
V
IC
Collector Current
15
A
IB
Base Current
4
A
PC
Collector Dissipation (TC=25°C)
100
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Emitter Breakdown Voltage
Test Condition
IC = 50mA, IB = 0
Min.
50
Typ.
Max.
Units
V
ICBO
Collector Cut-off Current
VCB = 100V, IE = 0
100
µA
IEBO
Emitter-Base Breakdown Voltage
VEB = 15V, IC= 0
100
µA
hFE
DC Current Gain
VCE = 5V, IC = 5A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 5A, IB = 0.12A
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 5A, IB = 0.12A
1.2
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
VCC = 20V, IC = 5A
IB1 = - I B2 = 0.12A
RL = 4Ω
©2002 Fairchild Semiconductor Corporation
40
V
0.5
µs
2.5
µs
0.5
µs
Rev. B1, September 2002
KSC5047
Typical Characteristics
VBE(sat), VCE(sat), SATURATION VOLTAGE
1000
hFE, DC CURRENT GAIN
VCE = 5V
100
10
1
0.1
1
10
10
IC=50 IB
1
VBE(sat)
VCE(sat)
0.1
0.01
0.1
100
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
100
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
IC[A], COLLECTOR CURRENT
10000
Cob[pF], CAPACITANCE
1
IC [A], COLLECTOR CURRENT
1000
100
10
1
0.1
10
1
10
100
1000
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
Figure 4. Safe Operating Area
160
PC[W], POWER DISSIPATION
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
o
TC[ C], TEMPERATURE
Figure 5. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
KSC5047
Package Dimensions
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
3.50 ±0.20
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
16.50 ±0.30
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1