Kexin BCW66F Npn transistor Datasheet

Transistors
SMD Type
NPN Transistors
BCW66
(KCW66)
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
■ Features
● Complementary to BCW68
1
0.55
and H according to DC current gain
+0.1
1.3 -0.1
+0.1
2.4 -0.1
● BCW66 is subdivided into three groups F,G
0.4
3
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
0.97
+0.1
-0.1
+0.05
0.1 -0.01
1.Base
0-0.1
+0.1
0.38 -0.1
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
75
Collector - Emitter Voltage
VCEO
45
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
IC
800
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
Tstg
-55 to 150
Storage Temperature Range
Unit
V
℃
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Transistors
SMD Type
NPN Transistors
BCW66
(KCW66)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Typ
Max
Collector- base breakdown voltage
VCBO
Ic= 100 μA, IE= 0
75
Collector- emitter breakdown voltage
VCEO
Ic= 10 mA, IB= 0
45
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
5
Collector-base cut-off current
ICBO
VCB= 45 V , IE= 0
20
Emitter cut-off current
IEBO
VEB= 4V , IC=0
20
IC=100 mA, IB=10mA
0.3
IC= 500 mA, IB= 50mA
0.7
IC= 500 mA, IB= 50mA
2
Collector-emitter saturation voltage (Note.1)
VCE(sat)
Base - emitter saturation voltage (Note.1)
VBE(sat)
VCE= 10V, IC= 100uA
hFE(1)
VCE= 1V, IC= 10mA
hFE(2)
DC current gain
VCE= 1V, IC= 100mA
hFE(3)
VCE= 2V, IC= 500mA
hFE(4)
F
35
G
50
H
80
F
75
G
110
H
180
F
100
250
G
160
400
H
250
630
F
35
G
60
H
100
Cob
VCB= 10V, IE= 0,f=1MHz
12
Collector input capacitance
Cib
VEB= 0.5V, IC= 0,f=1MHz
80
Noise figure
NF
VCE= 5V, IC= 0.2mA
RS=1KΩ,BW=200Hz
10
Transition frequency
fT
VCE= 10V, IC= 20mA,f=100MHz
Type
BCW66F
BCW66G
BCW66H
Range
100-250
160-400
250-630
Marking
EF
EG
EH
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Unit
V
Collector output capacitance
■ Classification of hfe(3)
2
Min
nA
V
pF
dB
MHz
Transistors
SMD Type
NPN Transistors
BCW66
(KCW66)
■ Typical Characterisitics
Static Characteristic
250
VCE= 1V
COMMON
EMITTER
Ta=25℃
720uA 640uA
800uA
hFE
560uA
480uA
200
hFE —— IC
500
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
300
400uA
150
320uA
240uA
100
160uA
o
Ta=100 C
400
300
o
Ta=25 C
200
100
50
IB=80uA
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE
VCE
7
VBEsat —— IC
1.2
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
1.0
0.8
Ta=25℃
0.6
0.4
1
Ta=100℃
10
COLLECTOR CURRENT
VCEsat ——
400
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
0
0.1
8
(V)
IC
100
800
(mA)
IC
β=10
300
200
Ta=100℃
100
0.2
Ta=25℃
0.0
0.1
1
10
100
COLLECTOR CURRENT
fT
——
1
10
100
Cob / Cib
——
800
100
COLLECTOR CURRENT
IC
IC
(mA)
VCB / VEB
180
f=1MHz
IE=0 / IC=0
160
Ta=25 C
(pF)
o
C
140
120
100
80
60
Cib
10
Cob
40
VCE=10V
20
0
o
Ta=25 C
1
10
100
COLLECTOR CURRENT
Pc
0.3
COLLECTOR POWER DISSIPATION
Pc (W)
800
(mA)
CAPACITANCE
TRANSITION FREQUENCY
fT
(MHz)
200
IC
0
0.1
——
IC
(mA)
1
0.1
1
REVERSE VOLTAGE
V
(V)
10
20
Ta
0.2
0.1
0.0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃)
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