SAVANTIC BDX66 Silicon pnp power transistor Datasheet

SavantIC Semiconductor
Product Specification
BDX66
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·High current
·DARLINGTON
APPLICATIONS
·Designed for power amplification and
switching applications.
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-16
A
ICM
Collector current(peak)
-20
A
IB
Base current
-0.25
A
PT
Total power dissipation
150
W
Tj
Junction temperature
-55~200
Tstg
Storage temperature
-55~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
MAX
UNIT
1.17
/W
SavantIC Semiconductor
Product Specification
BDX66
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-0.1A ; IB=0;L=25mH
VCEsat
Collector-emitter saturation voltage
IC=-10A ;IB=-40mA
-2
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
TC=150
-1
-5
mA
ICEO
Collector cut-off current
VCE=-30V; IB=0
-3
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5
mA
-60
UNIT
V
Switching times
ton
Turn-on time
toff
Turn-off time
IC=-10A ;
IB1=-IB2=0.04A
VCC=12V ;
2
1.0
µs
3.5
µs
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BDX66
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