Kexin BC818 Npn silicon af transistor Datasheet

Transistors
SMD Type
NPN Silicon AF Transistors
KC818(BC818)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
For general AF applications.
1
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
High collector current.
+0.05
0.1-0.01
+0.1
0.97-0.1
High current gain.
0-0.1
+0.1
0.38-0.1
Low collector-emitter saturation voltage.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
800
mA
power dissipation
PD
310
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-to-base breakdown voltage
VCBO
IC = 10
30
V
Collector-to-emitter breakdown voltage
VCEO
IC = 10 mA, IB = 0
25
V
5
A,VBE = 0
Emitter-to-base breakdown voltage
VEBO
IE = 10
Collector cutoff current
ICES
VCB =25 V, VBE= 0
100
nA
Emitter cutoff current
IEBO
VEB =4 V, IC = 0
100
nA
DC current gain *
hFE
A, IC = 0
IC =100 mA, VCE =1 V
100
IC =300 mA, VCE =1 V
60
V
630
Collector saturation voltage *
VCE(sat) IC =500 mA, IB = 50 mA
0.7
Base emitter on voltage
VBE(on) VCE=1V,IC=300mA
1.2
V
12
pF
Output Capacitance
Cob
Transition frequency
* Pulsed: PW
fT
350 ìs, duty cycle
VCB=10V,f=1MHz
IC = 10 mA, VCE =5 V, f = 50 MHz
100
V
MHz
2%
Marking
NO.
KC818-16
KC818-25
KC818-40
Marking
8GA
8GB
8GC
hFE
100
250
160
400
250
630
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