Fuji FMH28N50E N-channel silicon power mosfet Datasheet

FMH28N50E
FUJI POWER MOSFET
Super FAP-E3 series
N-CHANNEL SILICON POWER MOSFET
Features
Outline Drawings [mm]
Maintains both low power loss and low noise
Lower RDS (on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Equivalent circuit schematic
TO-3P(Q)
Drain(D)
Applications
Gate(G)
Source(S)
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
I DP
VGS
I AR
E AS
E AR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Tch
Tstg
Drain-Source Voltage
Characteristics
500
500
±28
±112
±30
28
1033.1
40
10.9
100
2.50
400
150
-55 to + 150
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
W
°C
°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Symbol
BVDSS
VGS (th)
Zero Gate Voltage Drain Current
I DSS
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
I GSS
R DS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
Q GS
Q GD
I AV
VSD
trr
Qrr
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Conditions
I D =250µA, VGS =0V
I D =250µA, VDS =VGS
VDS =500V, VGS =0V
VDS =400V, VGS =0V
VGS =±30V, VDS =0V
I D =14A, VGS =10V
I D =14A, VDS =25V
Tch =25°C
Tch =125°C
VDS =25V
VGS =0V
f=1MHz
Vcc =300V
VGS =10V
I D =14A
RGS=5.1Ω
Vcc =250V
I D =28A
VGS =10V
L=1.04mH, Tch =25°C
I F =28A, VGS =0V, Tch =25°C
I F =28A, VGS =0V
-di/dt=100A/µs, Tch=25°C
min.
500
2.5
16
28
-
typ.
3.0
10
0.16
32
4400
420
32
26
14
144
24
130
30
40
0.90
0.72
11.2
max.
3.5
25
250
100
0.19
6600
630
48
39
21
216
36
195
45
60
1.35
-
Unit
V
V
min.
typ.
max.
0.313
50.0
Unit
°C/W
°C/W
µA
nA
Ω
S
pF
ns
nC
A
V
µS
µC
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS =12A, L=13.2mH, Vcc=50V, RG =50Ω
E AS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Test Conditions
Channel to Case
Channel to Ambient
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : I F ≤-I D, -di/dt=100A/μs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : I F ≤-I D, dv/dt=10.9kV/μs, Vcc≤BVDSS, Tch≤150°C.
1
FMH28N50E
500
FUJI POWER MOSFET
SafeOperatingArea
Allowable Power Dissipation
PD=f(Tc)
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
10
t=
1µs
2
10µs
400
10
1
10
0
100µs
ID [A]
PD [W]
300
200
1ms
Power loss waveform :
Square waveform
-1
10
100
D.C.
PD
t
-2
0
10
0
80
25
50
75
Tc [°C]
100
125
0
150
1
10
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
100
10
10
VDS [V]
2
10
3
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
10V
70
6.0V
60
10
ID[A]
ID [A]
50
5.5V
40
1
30
5.0V
20
10
VGS=4.5V
0.1
0
0
100
4
8
12
VDS [V]
16
20
24
2
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
0.6
3
4
VGS[V]
5
6
7
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
VGS=4.5V
5V
0.5
5.5V
0.4
gfs [S]
RDS(on) [ Ω ]
10
0.3
6V
10V
0.2
1
0.1
0.0
0.1
0.1
1
10
0
100
10
20
30
ID [A]
ID [A]
2
40
50
60
FMH28N50E
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=14A,VGS=10V
6
0.5
5
0.4
4
VGS(th) [V]
RDS(on) [ Ω ]
0.6
FUJI POWER MOSFET
0.3
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250 µA
max.
3
typ.
min.
max.
2
0.2
typ.
1
0.1
0
0.0
-50
14
-25
0
25
50
Tch [°C]
75
100
125
-50
150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=28A,Tch=25 °C
4
-25
0
25
50
75
Tch [°C]
100
125
150
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10
Ciss
12
Vcc= 100V
250V
400V
10
3
10
C [pF]
VGS [V]
8
Coss
2
10
6
4
Crss
1
10
2
0
0
0
100
20
40
60
80
100 120
Qg [nC]
140
160
180
10
200
-1
0
10
10
10
1
2
10
10
3
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
3
10
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=5.1 Ω
td(off)
tf
2
10
td(on)
t [ns]
IF [A]
10
0.1
0.00
tr
1
1
10
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
10
2.00
-1
10
VSD [V]
3
0
10
ID [A]
10
1
2
10
FMH28N50E
1200
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=28A
1
10
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
IAS=12A
1000
0
EAV [mJ]
800
Zth(ch- c) [°C/ W ]
10
IAS=17A
600
IAS=28A
-1
10
-2
10
400
-3
10
200
-6
10
-5
10
-4
10
-3
10
t [sec]
0
0
25
50
75
100
starting Tch [°C]
125
150
4
-2
10
-1
10
0
10
FMH28N50E
FUJI POWER MOSFET
WARNING
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