Infineon MMBT2907A Pnp silicon switching transistor Datasheet

SMBT2907A/MMBT2907A
PNP Silicon Switching Transistor
3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type:
SMBT2222A/ MMBT2222A (NPN)
2
1
Type
Marking
SMBT2907A/MMBT2907A s2F
1=B
Pin Configuration
2=E
3=C
VPS05161
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
60
Collector-base voltage
VCBO
60
Emitter-base voltage
VEBO
5
DC collector current
IC
600
mA
Total power dissipation, TS = 77 °C
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Value
Unit
V
-65 ... 150
Thermal Resistance
Junction - soldering point 1)
RthJS
220
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Jun-12-2002
SMBT2907A/MMBT2907A
Electrical Characteristicsn at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)CEO
60
-
-
V(BR)CBO
60
-
-
V(BR)EBO
5
-
-
ICBO
-
-
10
nA
ICBO
-
-
10
µA
IEBO
-
-
10
nA
DC Characteristics
Collector-emitter breakdown voltage
V
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 50 V, IE = 0
Collector cutoff current
VCB = 50 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 3 V, IC = 0
-
hFE
DC current gain 1)
IC = 100 µA, VCE = 10 V
75
-
-
IC = 1 mA, VCE = 10 V
100
-
-
IC = 10 mA, VCE = 10 V
100
-
-
IC = 150 mA, VCE = 10 V
100
-
300
IC = 500 mA, VCE = 10 V
50
-
V
VCEsat
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
-
-
0.4
-
-
1.6
-
-
1.3
-
-
2.6
VBEsat
Base-emitter saturation voltage 1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
1) Pulse test: t ≤=300µs, D = 2%
2
Jun-12-2002
SMBT2907A/MMBT2907A
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol
Values
Parameter
Unit
min.
typ.
max.
200
-
-
MHz
Ccb
-
-
8
pF
Ceb
-
-
30
td
-
-
10
tr
-
-
40
tstg
-
-
80
tf
-
-
30
AC Characteristics
fT
Transition frequency
IC = 20 mA, VCE = 20 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Delay time
ns
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
Rise time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
Storage time
VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA
Fall time
VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA
3
Jun-12-2002
SMBT2907A/MMBT2907A
Test circuits
Delay and rise time
-30 V
Input
Z 0 = 50 Ω
t r < 2ns
0
-16 V
200 Ω
Osc.
t r < 5 ns
1 kΩ
50 Ω
200 ns
EHN00053
Storage and fall time
-6 V
+15 V
Input
Z 0 = 50 Ω
t r < 2 ns
0
-30 V
1 kΩ
1 kΩ
37 Ω
Osc.
t r < 5 ns
50 Ω
200 ns
EHN00054
Oscillograph: R > 100Ω, C < 12pF, tr < 5ns
4
Jun-12-2002
SMBT2907A/MMBT2907A
Total power dissipation Ptot = f(TS)
Collector-base capacitance CCB = f (VCB)
f = 1MHz
10 2
pF
360
mW
300
Ccb
SMBT 2907/A
EHP00747
5
P tot
270
240
210
10 1
180
150
5
120
90
60
30
0
0
15
30
45
60
75
90 105 120
10 0
10 -1
°C 150
TS
5
10 0
5
10 1
Transition frequency fT = f (IC)
Ptotmax / PtotDC = f (tp )
VCE = 5V
SMBT 2907/A
EHP00748
Ptot max
5
Ptot DC
10 3
MHz
tp
tp
D=
T
fT
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
10 2
VCB
Permissible pulse load
10 3
5
V
SMBT 2907/A
EHP00749
5
10 2
5
5
10 0
10 -6
10
-5
10
-4
10
-3
10
-2
s
10
10 1
10 0
0
5
10 1
5
10 2 mA 5
10 3
ΙC
tp
5
Jun-12-2002
SMBT2907A/MMBT2907A
Saturation voltage IC = f (VBEsat , VCEsat)
Delay time t d = f (IC)
hFE = 10
Rise time tr = f (IC)
10 3
SMBT 2907/A
EHP00750
10 3
SMBT 2907/A
ns
mA
ΙC
V CE
10 2
t r, t d
V BE
EHP00751
VBE = 0 V, VCC = 10 V,
VBE = 20 V, VCC = 30 V
5
tr
5
10 2
10 1
td
5
5
10 0
5
10 -2
10 -1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
10 1
0
10
1.6
5 10 1
VBE sat , VCE sat
Storage time tstg = f(IC)
10 3
t stg
5 10 2 mA 5 10 3
ΙC
Fall time t f = f (IC)
SMBT 2907/A
EHP00752
10 3
ns
tf
5
SMBT 2907/A
EHP00753
ns
VCC = 30 V
5
h FE = 20
h FE = 10
10 2
5
10 2
h FE = 10
5
h FE = 20
10 1
0
10
5 10 1
10 1
0
10
5 10 2 mA 5 10 3
5 10 1
5 10 2 mA 5 10 3
ΙC
ΙC
6
Jun-12-2002
SMBT2907A/MMBT2907A
DC current gain hFE = f (IC )
VCE = 5V
10 3
h FE
SMBT 2907/A
EHP00754
5
150 ˚C
25 ˚C
10 2
-50 ˚C
5
10 1
-1
10
10
0
10
1
10
2
mA 10 3
ΙC
7
Jun-12-2002
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