Fairchild FQD1N60C 600v n-channel mosfet Datasheet

QFET
®
FQD1N60C / FQU1N60C
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
•
•
•
•
•
•
1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V
Low gate charge ( typical 4.8nC)
Low Crss ( typical 3.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
• RoHS Compliant
D
!
D
●
◀
G
S
FQD Series
G!
I-PAK
D-PAK
G D S
▲
●
●
FQU Series
!
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQD1N60C / FQU1N60C
600
Units
V
1
A
- Continuous (TC = 100°C)
0.6
A
4
A
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
1
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)*
(Note 1)
2.8
4.5
2.5
mJ
V/ns
W
28
0.22
-55 to +150
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
± 30
V
33
mJ
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
4.53
Units
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient*
--
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
Rev. A1, January 2009
FQD1N60C / FQU1N60C
January 2009
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
600
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.6
IDSS
IGSSF
IGSSR
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
9.3
11.5
Ω
--
0.75
--
S
--
130
170
pF
--
19
25
pF
--
3.5
4.5
pF
--
7
24
ns
--
21
52
ns
--
13
36
ns
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID =
0.5 A
gFS
Forward Transconductance
VDS = 40 V, ID =
0.5 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 1.1 A,
RG = 25 Ω
(Note 4, 5)
VDS = 480 V, ID = 1.1 A,
VGS = 10 V
(Note 4, 5)
--
27
64
ns
--
4.8
6.2
nC
--
0.7
--
nC
--
2.7
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
1
A
ISM
--
--
4
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 0.5 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 1.1 A,
dIF / dt = 100 A/µs
(Note 4)
--
190
--
ns
--
0.53
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 59 mH, IAS = 1.1 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 1.1 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Rev. A1. January 2009
FQD1N60C / FQU1N60C
Electrical Characteristics
FQD1N60C / FQU1N60C
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
0
10
ID, Drain Current [A]
0
10
-1
10
o
150 C
o
-55 C
o
25 C
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
-1
10
-2
10
-1
0
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS = 10V
20
15
VGS = 20V
10
5
※ Note : TJ = 25℃
0
0.0
0.5
1.0
1.5
2.0
2.5
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
25℃
-1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
250
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
200
Ciss
Capacitance [pF]
150
Coss
100
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
50
12
VDS = 120V
10
VGS, Gate-Source Voltage [V]
RDS(ON) [Ω ],
Drain-Source On-Resistance
25
I DR , Reverse Drain Current [A]
30
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 1A
0
-1
10
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2009 Fairchild Semiconductor Corporation
0
0
1
2
3
4
5
6
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, January 2009
FQD1N60C / FQU1N60C
Typical Characteristics
(Continued)
1.2
3.0
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
RDS(ON) , (Normalized)
Drain-Source On-Resistance
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 0.5 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
o
1.2
Operation in This Area
is Limited by R DS(on)
1
10
1.0
100 µs
ID, Drain Current [A]
ID, Drain Current [A]
0.8
1 ms
0
10
10 ms
100 ms
DC
0.6
0.4
-1
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.2
-2
10
0
1
10
2
10
0.0
25
3
10
10
50
75
100
125
150
TC, Case Temperature [℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Z
θ JC
( t), T h e rm a l R e s p o n s e
VDS, Drain-Source Voltage [V]
D = 0 .5
10
0
※ N o te s :
1 . Z θ J C ( t) = 4 .5 3 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 / t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .2
0 .1
PDM
0 .0 5
t1
0 .0 2
10
t2
0 .0 1
-1
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
Rev. A1, January 2009
FQD1N60C / FQU1N60C
Gate Charge Test Circuit & Waveform
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2009 Fairchild Semiconductor Corporation
ID (t)
VDS (t)
VDD
tp
Time
Rev. A1, January 2009
FQD1N60C / FQU1N60C
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2009 Fairchild Semiconductor Corporation
Rev. A1, January 2009
FQD1N60C / FQU1N60C
Mechanical Dimensions
TO-252 (DPAK) (FS PKG Code 36)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Part Weight per unit (gram): 0.33
©2009 Fairchild Semiconductor Corporation
Rev. A1, January 2009
FQD1N60C / FQU1N60C
Mechanical Dimensions
I - PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
Rev. A1, January 2009
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FQD1N60C / FQU1N60C
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Rev. I37
©2009 Fairchild Semiconductor Corporation
Rev. A1. January 2009
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