NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H380TM █ APPLICATIONS High Frequency Amplifier Application. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………300mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO ——Collector-Base Voltage………………………………35V VCEO ——Collector-Emitter Voltage……………………………30V VE B O ——Emitter -Base Voltage………………………………4V IC——Collector Current…………………………………………50mA IE ——Emitter Current…………………………………………-50mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ３５ Ｖ BVCEO Collector-Emitter Breakdown Voltage ３０ Ｖ BVEBO Emitter-Base Breakdown Voltage ４ Ｖ DC Current Gain ４０ IE=100μA，IC=0 VCE=12V, IC=2mA HFE ２４０ IC=100μA, IE=0 IC=1mA, IB=0 VCE(sat) Collector- Emitter Saturation Voltage ０．４ Ｖ IC=10mA, IB=1mA VBE(sat) Base-Emitter Voltage １．０ Ｖ IC=10mA, IB=1mA ICBO Collector Cut-off Current ０．１ μＡ VCB=35V, IE=0 IEBO Emitter Cut-off Current Current Gain-Bandwidth Product μＡ ＭＨｚ ｐＦ VEB=4V, IC=0 fT Cob １．０ ４００ ３．２ １００ １．４ Output Capacitance ２．０ █ hFE Classification R ４０—８０ O Y ７０—１４０ １２０—２４０ VCE=10V, IC=1mA VCB=10V, IE=0，f=1ＭＨｚ