Power-SPMTM FD6M033N06 tm 60V/73A Synchronous Rectifier Module General Features General Description The FD6M033N06 is one product in the Power-SPMTM family that Fairchild has newly developed and designed to be most suitable for more compact and more efficient synchronous rectification applications such as internet server power supplies and telecom system power supplies. For higher efficiency, it includes built-in very low RDS(ON) MOSFETs. This Power-SPM device can be used in the secondary side of the PWM transformer of forward/bridge converter to provide high current rectification at output voltages ranging from 12 Volts down to 5 Volts. With this product, it is possible to design the secondary side of power supply systems with reduced parasitic elements resulting in minimized voltage spike and EMI noise. • Very High Rectification Efficiency at Output 12V • Integrated Solution for Saving Board Space • RoHS Compliant MOSFET Features Applications • VDSS = 60V • High Current Isolated Converter • QG(TOTAL) = 99nC(Typ.), VGS = 10V • Distributed Power Architectures • RDS(ON) = 2.6mΩ(Typ.), VGS = 10V, ID = 40A • Synchronous Rectification • Low Miller Charge • DC/DC Converter • Low Qrr Body Diode • Battery Supplied Application • UIS Capability (Single Pulse and Repetitive Pulse) • ORing MOSFET • Fully Isolated Package 1 15 EPM15 Package Block Diagram 10 9 G2 D2 15 8 Q2 14 G1 6 13 S2 12 7 11 Q1 S1 D1 1 2 3 4 5 Figure 1. FD6M033N06 Module Block Diagram ©2008 Fairchild Semiconductor Corporation FD6M033N06 Rev. A 1 www.fairchildsemi.com FD6M033N06 60V/73A Synchronous Rectifier Module March 2008 FD6M033N06 60V/73A Synchronous Rectifier Module Pin Configuration and Pin Description Top View D1 S1 G1 NC NC G2 S2 D2 NC Figure 2. Pinmap of FD6M033N06 Pin Number Pin Name Pin Description 1 D1 Drain of Q1, MOSFET 2~5 S1 Source of Q1, MOSFET 6 G1 Gate of Q1, MOSFET 7 NC No Connection 8 NC No Connection 9 NC No Connection 10 G2 Gate of Q2, MOSFET 11 ~ 14 S2 Source of Q2, MOSFET 15 D2 Drain of Q2, MOSFET Absolute Maximum Ratings TC = 25°C, Symbol Unless Otherwise Specified Parameter Rating Unit 60 V Gate to Source Voltage ±20 V Drain Current, Continuous (VGS = 10V) (Note1) 73 A EAS Single Pulse Avalanche Energy (Note1,2) 924 mJ TJ, TSTG Operating and Storage Temperature Range -40 ~ 150 °C VDS Drain to Source Voltage VGS ID (Note1) Thermal Resistance Symbol RθJC Parameter Junction to Case Thermal Resistance (Note1) Min. Typ. Max. Unit - - 3.9 °C/W Note: 1. Each MOSFET Switch 2. Starting TJ = 25°C, VD = 40V, L = 0.2mH, IAS = 55.5A FD6M033N06 Rev. A 2 www.fairchildsemi.com Symbol Parameter Test Conditions Min. Typ. Max. Units Synchronous Rectifier Switch Part (Each Switch) BVDSS Drain to Source Breakdown Voltage ID= 250μA, VGS = 0V 60 - - V IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 48V - - 1 μA IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate Threshold Voltage VD = 20V, IDS = 250μA 2.0 - 4.0 V RDS(ON) Drain to Source On Resistance ID = 40A, VGS = 10V - 2.6 3.3 - 4.88 - - 6010 - pF - 1145 - pF - 365 - pF TJ = 150°C mΩ Dynamic Charateristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V - 99 129 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 11 14 nC Qgs Gate to Source Gate Charge VDD = 40V - 27 - nC Qgs2 Gate Charge Threshold to Plateau ID = 40A - 16 - nC Qgd Gate to Drain “MIller” Charge Ig = 1.0mA - 28 - nC VDS = 25V, VGS = 0V, f = 1MHz Switching Charateristics (VGS = 10V) tON Turn-On Time - - 90 ns td(on) Turn-On Delay Time - 23 - ns tr Rise Time - 27 - ns td(off) Turn-Off Delay Time - 52 - ns tf Fall Time - 33 - ns tOFF Turn-Off Time - - 135 ns ISD = 80A, VGS = 0V - - 1.25 ISD = 40A, VGS = 0V - - 1.0 ID = 40A VGS = 10V, VDD = 40V, RG = 5Ω Drain-Source Diode Charateristics VSD Source to Drain Diode Voltage V trr Reverse Recovery Time ISD = 40A, dISD/dt = 100A/μs - 36 - ns Qrr Reverse Recovery Charge ISD = 40A, dISD/dt = 100A/μs - 38 - nC FD6M033N06 Rev. A 3 www.fairchildsemi.com FD6M033N06 60V/73A Synchronous Rectifier Module Electrical Characteristics TC = 25°C, Unless Otherwise Specified FD6M033N06 60V/73A Synchronous Rectifier Module Typical Performance Characteristics Each Switch, Unless Otherwise Specified Figure 3. On-Region Characteristics 120 VGS 10.0 V 7.0 V 6.0 V Bottom : 5.0 V ID, Drain Current[A] Top : 80 VDS ID D VGS G 40 VGS,STEP *Notes : 1. 250μs Pulse Test o 2. TC = 25 C 0 0.0 0.5 1.0 VDS FD6M033N06 S 1.5 VDS, Drain-Source Voltage[V] Figure 4. Transfer Characteristics 160 VDS 120 ID, Drain Current[A] ID D VGS G VDS VGS o 150 C 80 o 25 C o -40 C 40 *Notes : 1. VDS = 15V 2. 250μs Pulse Test FD6M033N06 S 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGS, Input Voltage[V] Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Output Capacitance Characteristic 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C 8 o 150 C Capacitance [nF] IS, Reverse Drain Current [A] 100 o 25 C 10 *Notes : 1. VGS = 0V 2. 250μs Pulse Test 0.6 0.8 1.0 0 0.1 1.2 VSD, Body Diode Forward Voltage [V] FD6M033N06 Rev. A 4 Coss * Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 1 0.4 iss Ciss 1 10 60 VDS, Drain-Source Voltage [V] 4 www.fairchildsemi.com Figure 8. On-Resistance Variation vs. Temperature 1.20 2.5 * Notes: 1. VGS = 0V 2. ID = 250μA 1.10 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.00 0.90 0.85 -50 0 50 100 150 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 40 A 0.5 0.0 200 -50 TJ, Junction Temperature [°C] 0 50 100 150 TJ, Junction Temperature [°C] 200 Figure 9. Transient Thermal Response Curve Thermal Response [ZθJC] 10 0.5 1 0.2 0.1 0.05 0.1 PDM 0.02 t1 0.01 t2 *Notes: o 0.01 1. ZθJC(t) = 3.9 C/W Typ. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 -4 10 -3 10 -2 -1 10 0 10 1 10 2 10 10 Rectangular Pulse Duration [sec] Figure 10. Maximum Safe Operating Area Figure 11. Unclamped Inductive Switching Capability 300 400 100μs IAS, Avalanche Current [A] ID, Drain Current [A] 100 1ms 100 10ms DC 10 Operation in This Area is Limited by R DS(on) 1 * Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.1 0.1 FD6M033N06 Rev. A 1 10 VDS, Drain-Source Voltage [V] o Starting TJ = 25 C 10 o Starting TJ = 125 C 1 0.01 100 If R = 0 tAV = (L)(IAS)/(1.3*Rated BVDSS - VDD) If R ? 0 tAV = (L/R)ln[(IAS*R)/(1.3*Rated BVDSS - VDD) + 1] 0.1 1 10 100 1000 tAV, Time In Avalanche [ms] 5 www.fairchildsemi.com FD6M033N06 60V/73A Synchronous Rectifier Module Typical Performance Characteristics (Continued) IAS tp VDS D VDS IAS L VGS VDD VGS G VDD tp FD6M033N06 S 0 tAV Figure 12. Unclamped Inductive Switching Test Circuit and Waveforms VDS D RL VGS R 13. G Figure Switching Test WaveformsVDD G FD6M033N06 PULSE S Figure 13. Switching Test Circuit tON tOFF td(ON) td(OFF) tr tf 90% 90% VDS 10% 10% 90% VGS 10% 50% 50% PULSE WIDTH Figure 14. Switching Test Waveforms FD6M033N06 Rev. A 6 www.fairchildsemi.com FD6M033N06 60V/73A Synchronous Rectifier Module AC Test Circuits and Waveforms VIN VOUT 9 10 15 G2 D2 8 Q2 6 14 G1 13 7 S2 12 PWM Controller Q1 11 S1 D1 1 2 3 4 5 OPTO Feedback Figure 15. Application Circuit of Forward Converter with FD6M033N06 LF VIN 9 10 VOUT 15 G2 D2 CF Q1 8 Q2 CR 6 14 G1 VOUT_FB 13 7 FOD817 S2 12 Q1 Q2 KA431 11 S1 D1 1 2 3 4 5 LF Figure 16. Application Circuit of Asymmetrical HB Converter with FD6M033N06 LF VIN Q1 Q3 9 10 VOUT 15 G2 D2 CF 8 Q2 6 14 G1 13 7 FOD817 S2 12 Q2 VOUT_FB Q1 Q4 KA431 11 S1 D1 1 2 3 4 5 LF Figure 17. Application Circuit of Full Bridge Converter with FD6M033N06 FD6M033N06 Rev. A 7 www.fairchildsemi.com FD6M033N06 60V/73A Synchronous Rectifier Module Application circuits 26.20 25.80 2.70 2.30 23.10 22.90 (0.50) (R0.50) 5.35 5.15 10.70 10.30 (12.00) 14.50 13.50 18.50 17.50 (1.50) (R0.55) (0.77) (R0.55) 0.70 0.30 MAX 3.07 MAX 0.80 2.97 2.77 0.70 0.50 (6.00) 0.60 0.40 3.48 2.88 1.27 22.86 (R0.50) 2.70 2.30 Figure 18. EPM15 Package Dimensions in Millimeters FD6M033N06 Rev. A 8 www.fairchildsemi.com FD6M033N06 60V/73A Synchronous Rectifier Module Detailed Package Outline Drawings TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com