TSC HS1G 1.0 amp. high efficient surface mount rectifier Datasheet

HS1A THRU HS1M
1.0 AMP. High Efficient Surface Mount Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
SMA/DO-214AC
Features
Glass passivated junction chip.
For surface mounted application
Low forward voltage drop
Low profile package
Built-in stain relief, ideal for automatic
placement
Fast switching for high efficiency
High temperature soldering:
260℃/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
.062(1.58)
.050(1.27)
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
.091(2.30)
.078(1.99)
.012(.31)
.006(.15)
Mechanical Data
.008(.20)
.004(.10)
.056(1.41)
.035(0.90)
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: 12mm tape per E1A STD RS-481
Weight: 0.064 gram
.210(5.33)
.195(4.95)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol HS HS HS
Type Number
1A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig.2
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ TA =25℃
at Rated DC Blocking Voltage @ TA=100℃
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
VRRM
VRMS
VDC
50
35
50
1B
1D
HS
1F
HS
1G
HS
1J
HS
1M
100 200 300 400 600 800 1000
70 140 210 280 420 560 700
100 200 300 400 600 800 1000
Units
V
V
V
I(AV)
1.0
A
IFSM
30
A
1.0
VF
1.3
1.7
5.0
100
IR
50
20
Trr
Cj
RθJA
70
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Mounted on P.C.B. with 0.2”x0.2” ( 5 x 5 mm ) Copper Pad Areas.
Maximum Thermal Resistance ( Note 3 )
HS
1K
- 300 -
75
15
V
uA
uA
nS
pF
℃/W
℃
℃
RATINGS AND CHARACTERISTIC CURVES (HS1A THRU HS1M)
10W
NONINDUCTIVE
AVERAGE FORWARD CURRENT. (A)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
0
-0.25A
(+)
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
1cm
1.0
0.8
P.C.B.MOUNTED
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
0.6
0.4
0.2
0
80
90
100 110
120 130 o 140
LEAD TEMPERATURE. ( C)
150
FIG.4- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1000
100
Tj=25 0C
1
0.1
0
20
40
60
80
100
120
D
1
HS
HS
M
S1
1
0.1
0.01
0
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
FORWARD VOLTAGE. (V)
FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
FIG.6- TYPICAL JUNCTION CAPACITANCE
70
35
60
JUNCTION CAPACITANCE.(pF)
40
30
1G
A-
1
HS
-H
10
Tj=25 0C
10
1J
Tj=100 0C
100
HS
INSTANTANEOUS FORWARD CURRENT. (A)
INSTANTANEOUS REVERSE CURRENT. ( A)
1.2
SET TIME BASE FOR
5/ 10ns/ cm
FIG.3- TYPICAL REVERSE CHARACTERISTICS
PEAK FORWARD SURGE CURRENT. (A)
FIG.2- MAXIMUM AVERAGE
FORWARD CURRENT DERATING
8.3ms Single Half Sine Wave
JEDEC Method
25
20
15
10
50
40
HS
30
20
HS
1J-
1A
-HS
HS
1G
1M
10
5
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
0
0.1
0.5
1
2
5
10
20
REVERSE VOLTAGE. (V)
- 301 -
50
100 200
500
1000
Similar pages