Advance Technical Information IXFN100N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS(on) trr = = ≤ ≤ 500V 82A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 82 A IDM TC = 25°C, Pulse Width Limited by TJM 300 A IA TC = 25°C 100 A EAS TC = 25°C 5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns PD TC = 25°C 960 W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features z z z z z z International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = ±30V, VDS = 0V ±200 nA IDSS VDS = VDSS, VGS = 0V 50 μA 2.5 mA RDS(on) VGS = 10V, ID = 50A, Note 1 TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved Applications V 6.5 High Power Density Easy to Mount Space Savings V z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 49 mΩ DS100308(03/11) IXFN100N50Q3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = 20V, ID = 50A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf Qgs 65 S 13.8 nF 1690 pF 177 pF 0.12 Ω 40 ns 20 ns 50 ns 15 ns 255 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 50A RG = 0.5Ω (External) Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 50A Qgd SOT-227B (IXFN) Outline 110 nC 115 nC (M4 screws (4x) supplied) 0.13 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 100 A ISM Repetitive, Pulse Width Limited by TJM 400 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM Note IF = 50A, -di/dt = 200A/μs 3.5 30.0 VR = 100V, VGS = 0V 250 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN100N50Q3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 100 VGS = 10V 9V 90 VGS = 10V 200 80 160 9V ID - Amperes ID - Amperes 70 60 8V 50 40 120 8V 80 30 20 7V 40 7V 10 6V 6V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4.5 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 50A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 100 3.2 VGS = 10V 90 VGS = 10V 2.8 80 R DS(on) - Normalized 8V ID - Amperes 70 60 50 7V 40 30 2.4 I D = 100A 2.0 I D = 50A 1.6 1.2 20 6V 0.8 10 5V 0 0.4 0 1 2 3 4 5 6 7 8 9 10 11 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 50A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 90 3.0 VGS = 10V 2.8 80 TJ = 125ºC 2.6 70 2.4 60 2.2 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 2.0 1.8 1.6 50 40 30 1.4 20 1.2 TJ = 25ºC 10 1.0 0 0.8 0 20 40 60 80 100 120 140 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 160 180 200 220 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN100N50Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 110 140 TJ = - 40ºC 100 120 90 g f s - Siemens ID - Amperes 25ºC 80 100 80 TJ = 125ºC 25ºC 60 - 40ºC 40 70 125ºC 60 50 40 30 20 20 10 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 20 40 VGS - Volts 60 80 100 120 140 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 16 300 VDS = 250V 14 I D = 50A 250 I G = 10mA 12 VGS - Volts IS - Amperes 200 150 10 8 6 100 TJ = 125ºC 4 TJ = 25ºC 50 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0 50 VSD - Volts 150 200 250 300 350 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100000 f = 1 MHz RDS(on) Limit 250µs Ciss 100 10000 ID - Amperes Capacitance - PicoFarads 100 Coss 10 1000 1 1ms TJ = 150ºC TC = 25ºC Single Pulse Crss 100 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN100N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_100N50Q3(Q9)02-24-11