Infineon IKP10N60T Trenchstop sery Datasheet

IKP10N60T
p
TrenchStop® Series
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
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•
•
•
•
•
•
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Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5μs
Designed for :
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKP10N60T
G
E
PG-TO-220-3-1
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
Package
600V
10A
1.5V
175°C
K10T60
PG-TO-220-3-1
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
IC
Pulsed collector current, tp limited by Tjmax
ICpuls
30
Turn off safe operating area VCE ≤ 600V, Tj ≤ 175°C
-
30
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
IF
Diode pulsed current, tp limited by Tjmax
IFpuls
30
Gate-emitter voltage
VGE
±20
V
tSC
5
μs
Power dissipation TC = 25°C
Ptot
110
W
Operating junction temperature
Tj
-40...+175
°C
Storage temperature
Tstg
-55...+175
Short circuit withstand time
2)
Value
600
Unit
V
A
20
10
20
10
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Soldering temperature,
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
1
2)
260
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.3 Sep. 07
IKP10N60T
p
TrenchStop® Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
1.35
K/W
RthJCD
1.9
RthJA
62
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
typ.
max.
600
-
-
T j = 25°C
-
1.5
2.05
T j = 175 °C
-
1.8
-
T j = 25°C
-
1.6
2.0
T j = 175 °C
-
1.6
-
4.1
4.6
5.7
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0 V , I C =0.2mA
Collector-emitter saturation voltage
VCE(sat)
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
VF
V
V G E = 15 V, I C =10A
VGE=0V, IF=10A
VGE(th)
I C =0.3mA,V C E =V G E
ICES
V C E = 60 0 V ,
VGE=0V
µA
T j = 25°C
-
-
40
T j = 175 °C
-
-
1000
Gate-emitter leakage current
IGES
V C E = 0 V ,V G E =20V
-
-
100
nA
Transconductance
gfs
V C E =20V, I C =10A
-
6
-
S
Integrated gate resistor
RGint
none
Ω
Dynamic Characteristic
Input capacitance
Ciss
V C E =25V,
-
551
-
Output capacitance
Coss
VGE=0V,
-
40
-
Reverse transfer capacitance
Crss
f=1MHz
-
17
-
Gate charge
QGate
V C C = 48 0 V, I C =10A
-
62
-
nC
-
7
-
nH
-
100
-
A
pF
V G E =15V
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
Short circuit collector current1)
1)
IC(SC)
V G E =15V,t S C ≤5 μs
V C C = 400 V,
T j = 2 5°C
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.3 Sep. 07
IKP10N60T
p
TrenchStop® Series
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
12
-
-
8
-
-
215
-
-
38
-
-
0.16
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
ns
-
0.27
-
Ets
T j = 25°C ,
V C C = 40 0 V, I C =10A,
V G E = 0 /1 5 V,
R G = 2 3Ω ,
L σ 2 ) =6 0nH ,
C σ 2 ) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-
0.43
-
Diode reverse recovery time
trr
T j = 25°C ,
-
115
-
ns
Diode reverse recovery charge
Qrr
V R = 40 0 V , I F =10A,
-
0.38
-
µC
Diode peak reverse recovery current
Irrm
d i F /d t= 880A/μs
-
10
-
A
Diode peak rate of fall of reverse
recovery current during t b
dirr/dt
-
680
-
A/μs
mJ
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
10
-
-
11
-
-
233
-
-
63
-
-
0.26
-
Unit
IGBT Characteristic
-
0.35
-
Ets
T j = 175 °C ,
V C C = 40 0 V, I C =10A,
V G E = 0 /1 5 V,
R G = 2 3Ω
L σ 1 ) =6 0nH ,
C σ 1 ) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-
0.61
-
Diode reverse recovery time
trr
T j = 175 °C
-
200
-
ns
Diode reverse recovery charge
Qrr
V R = 40 0 V , I F =10A,
-
0.92
-
µC
Diode peak reverse recovery current
Irrm
d i F /d t= 880A/μs
-
13
-
A
Diode peak rate of fall of reverse
recovery current during t b
dirr/dt
-
390
-
A/μs
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
ns
mJ
Anti-Parallel Diode Characteristic
2)
1)
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.3 Sep. 07
IKP10N60T
p
TrenchStop® Series
tp=1µs
T C =80°C
20A
15A
T C =110°C
10A
Ic
5A
0A
10H z
5µs
10A
25A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
30A
20µs
100µs
1A
500µs
10ms
Ic
DC
100H z
1kH z
10kH z
0,1A
1V
100kH z
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 23Ω)
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C;
VGE=15V)
120W
30A
IC, COLLECTOR CURRENT
80W
60W
40W
Ptot,
POWER DISSIPATION
100W
20A
10A
20W
0W
25°C
50°C
75°C
0A
25°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
Power Semiconductors
4
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Rev. 2.3 Sep. 07
IKP10N60T
p
TrenchStop® Series
30A
30A
25A
V G E =20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
25A
15V
20A
12V
10V
15A
8V
6V
10A
5A
12V
10V
15A
8V
6V
10A
0A
0V
1V
2V
3V
4V
0V
25A
20A
15A
10A
T J = 1 7 5 °C
5A
2 5 °C
0V
2V
4V
6V
8V
10V
2V
3V
4V
5V
3,0V
IC =20A
2,5V
IC =10A
2,0V
1,5V
IC =5A
1,0V
0,5V
0,0V
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
Power Semiconductors
1V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
15V
20A
5A
0A
0A
V G E =20V
5
Rev. 2.3 Sep. 07
IKP10N60T
p
TrenchStop® Series
t d(off)
t d(off)
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
tf
t d(on)
10ns
tf
t d(on)
10ns
tr
tr
1ns
1ns
0A
5A
10A
15A
20A
10Ω
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 23Ω,
Dynamic test circuit in Figure E)
20Ω
30Ω
40Ω
50Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
t d(off)
t, SWITCHING TIMES
100ns
tf
t d(on)
10ns
tr
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V
6V
4V
m ax.
typ.
5V
m in.
3V
2V
1V
1ns
25°C
50°C
75°C
0V
-50°C
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 10A, RG=23Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.3mA)
6
Rev. 2.3 Sep. 07
IKP10N60T
p
TrenchStop® Series
*) E on and E ts include losses
1,0 m J
0,8 m J
E off
0,6 m J
0,4 m J
E on *
0,2 m J
0,0 m J
0A
5A
1 0A
0,8 mJ
0,6 mJ
0,4 mJ
10Ω
30Ω
40Ω
50Ω
*) E on and E ts include losses
due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
20Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
due to diode recovery
E ts *
0,4mJ
0,3mJ E off
0,2mJ
0,1mJ
E on*
0,2 mJ
*) E on and E ts include losses
0,5mJ
E off
0,0 mJ
1 5A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 23Ω,
Dynamic test circuit in Figure E)
0,6mJ
E ts*
due to diode recovery
E ts *
du e to dio de rec ov e ry
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
*) E on a n d E ts in c lu d e lo ss e s
E on*
0,8m J
0,6m J
E ts *
0,4m J
E off
0,2m J
E on *
0,0mJ
50°C
100°C
0,0m J
300V
150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 10A, RG = 23Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
350V
400V
450V
500V
550V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 10A, RG = 23Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.3 Sep. 07
IKP10N60T
p
TrenchStop® Series
1nF
VGE, GATE-EMITTER VOLTAGE
C iss
120V
10V
c, CAPACITANCE
15V
480V
100pF
C oss
5V
C rss
0V
0nC
20nC
40nC
10pF
60nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=10 A)
0V
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
SHORT CIRCUIT WITHSTAND TIME
150A
125A
100A
75A
50A
tSC,
IC(sc), short circuit COLLECTOR CURRENT
12µs
25A
0A
12V
14V
16V
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE ≤ 400V, Tj ≤ 150°C)
Power Semiconductors
10µs
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
TJmax<150°C)
8
Rev. 2.3 Sep. 07
IKP10N60T
p
TrenchStop® Series
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
0
10 K/W
D=0.5
0.1
R1
0.05
-1
10 K/W
τ, (s)
-2
6.53*10
-3
8.33*10
-4
7.37*10
-5
7.63*10
R,(K/W)
0.2911
0.4092
0.5008
0.1529
0.2
0.02
0.01
R2
C1=τ1/R1
C2=τ2/R2
single pulse
-2
10 K/W
10µs
0.2
0.1
-1
10 K/W
0.05
R,(K/W)
0.3169
0.4734
0.6662
0.4398
R1
τ, (s)
-2
4.629*10
-3
7.07*10
-3
1.068*10
-4
1.253*10
6
R2
0.02
0.01
C1=τ1/R1
C2=τ2/R2
single pulse
-2
100µs
1ms
10ms
100ms
10µs 100µs
1ms
10ms 100ms
tP, PULSE WIDTH
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
0,8µC
250ns
TJ=175°C
200ns
150ns
100ns
TJ=25°C
50ns
Qrr, REVERSE RECOVERY CHARGE
300ns
trr, REVERSE RECOVERY TIME
D=0.5
10 K/W
1µs
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
0ns
200A/µs
0
10 K/W
T J=175°C
0,7µC
0,6µC
0,5µC
0,4µC
T J=25°C
0,3µC
0,2µC
0,1µC
0,0µC
400A/µs
600A/µs
200A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=10A,
Dynamic test circuit in Figure E)
Power Semiconductors
9
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 10A,
Dynamic test circuit in Figure E)
Rev. 2.3 Sep. 07
TrenchStop® Series
T J =175°C
2A
10A
T J =25°C
8A
6A
4A
0A
200A/µs
400A/µs
600A/µs
-600A/µs
-500A/µs
-400A/µs
T J=175°C
-300A/µs
-200A/µs
-100A/µs
0A/µs
400A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 10A,
Dynamic test circuit in Figure E)
T J=25°C
-700A/µs
dirr/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
REVERSE RECOVERY CURRENT
12A
Irr,
14A
IKP10N60T
p
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=10A,
Dynamic test circuit in Figure E)
30A
2,0V
T J =25°C
I F =20A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
175°C
20A
10A
0A
0V
1V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
Power Semiconductors
5A
1,0V
0,5V
0,0V
-50°C
2V
10
10A
1,5V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
Rev. 2.3 Sep. 07
TrenchStop® Series
IKP10N60T
p
PG-TO-220-3-1
Power Semiconductors
11
Rev. 2.3 Sep. 07
IKP10N60T
p
TrenchStop® Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
QS
Ir r m
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
a nd Stray capacity C σ =40pF.
Figure B. Definition of switching losses
Power Semiconductors
12
Rev. 2.3 Sep. 07
TrenchStop® Series
IKP10N60T
p
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 1/25/08.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.3 Sep. 07
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