DDTCxxxxLP (R1≠R2 Series) PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 2 C Mechanical Data • • • • • • • • Maximum Ratings E R1 R2 1 B Fig. 1 Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: Collector Dot (See Diagram) Terminals: Finish ⎯ NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 6 Ordering Information: See Page 6 Weight: 0.001 grams (approximate) Component P/N DDTC123JLP DDTC143ZLP DDTC114YLP 2 3 1 3 R1(NOM) 2.2K 4.7K 10K R2(NOM) 47K 47K 47K 3 C IN 1 OUT B R1 IN C B 1 E R2 2 2 3 E OUT GND Equivalent Inverter Circuit GND Schematic and Pin Configuration Fig. 2 Figure 2 2 2 @TA = 25°C unless otherwise specified Characteristic Supply Voltage Power Dissipation (Note 3) PD Value 50 -5 to +12 -5 to +30 -5 to +40 100 100 70 250 Power Deration above 25 °C Maximum Collector Current Pder 2 IC(max) 100 Input Voltage Output Voltage P/N Symbol VCC DDTC123JLP DDTC143ZLP DDTC114YLP DDTC123JLP DDTC143ZLP DDTC114YLP VIN IO Unit V mW/°C mA V mA mW Thermal Characteristics Characteristic Junction Operating and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of NPN) Notes: 1. 2. 3. Symbol Tj, TSTG Value -55 to +150 Unit °C RθJA 400 °C/W No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB, 1 inchx0.85inchx0.062inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on page 6 or our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30755 Rev. 4 - 2 1 of 7 www.diodes.com DDTCxxxxLP (R1≠R2 Series) © Diodes Incorporated Electrical Characteristics Characteristic Off Characteristics (Note 4) Collector-Base Breakdown Voltage @TA = 25°C unless otherwise specified P/N Symbol Min Typ Max Unit Test Condition V(BR)CBO 50 ⎯ ⎯ V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage * V(BR)CEO 50 ⎯ ⎯ V IC = 2mA, IB = 0 Emitter-Base Breakdown Voltage * V(BR)EBO 4.5 ⎯ V IE = 50μA, IC = 0 ICEX ⎯ ⎯ ⎯ 0.5 μA VCE = 50V, VEB(OFF) = 3.0V IBL ⎯ ⎯ 0.5 μA VCE = 50V, VEB(OFF) = 3.0V ICBO ⎯ ⎯ 0.5 μA VCB = 50V, IE = 0 ICEO ⎯ ⎯ 0.5 μA VCE = 50V, IB = 0 IEBO ⎯ ⎯ 0.5 mA VEB = 5V, IC = 0 VI(OFF) ⎯ ⎯ 0.5 V VCE = 5V, IC = 100μA ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.1 ⎯ ⎯ ⎯ 50 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.85 0.85 0.95 0.98 0.998 0.98 ⎯ 7.2 1.5 7.2 ⎯ V VCE = 5V, IC = 2mA V IC = 10mA, IB = 1mA, VCE=5V V VO = 0.3V, IC = 5mA 70 ⎯ ⎯ 125 ⎯ 150 Collector Cutoff Current * Base Cutoff Current (IBEX) Collector-Base Cut Off Current Collector-Emitter Cut Off Current, IO(OFF) Emitter-Base Cut Off Current Input-Off Voltage On Characteristics (Note 4) Base-Emitter Turn-On Voltage* Base-Emitter Saturation Voltage* DDTC123JLP DDTC143ZLP DDTC114YLP DDTC123JLP DDTC143ZLP DDTC114YLP Input-On Voltage VBE(ON) VBE(SAT) VI(ON) DDTC123JLP DDTC143ZLP DDTC114YLP Input Current DC Current Gain II hFE B VI = 5V ⎯ VCE = 5V, IC = 1mA ⎯ VCE = 5V, IC = 2mA ⎯ ⎯ VCE = 5V, IC = 5mA ⎯ ⎯ ⎯ VCE = 5V, IC = 10mA 180 ⎯ ⎯ ⎯ ⎯ 0.15 ⎯ V IC = 10mA, IB = 1mA ⎯ ⎯ 0.2 V IC = 50mA, IB = 5mA IJ = 2.5mA, IO = 50mA ⎯ ⎯ VCE(SAT) Output On Voltage (Same as VCE(SAT)) Input Resistor +/-30% Resistor Ratio Small Signal Characteristics Transition Frequency (gain bandwidth product) VO(ON) ΔR1 Δ (R2/R1) ⎯ -30 -20 ⎯ ⎯ ⎯ 0.3 30 -20 % % Ft ⎯ 250 ⎯ MHz VCE = 5V, IC = 50mA B B VCE = 10V, IE = 5mA, f = 100MHz *Guaranteed by design 4. Short duration pulse test used to minimize self-heating effect. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 Typical Characteristics Curves PD, POWER DISSIPATION (mW) B mA Collector-Emitter Saturation Voltage Notes: B @TA = 25°C unless otherwise specified RθJA=400°C/W TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Derating Curve DS30755 Rev. 4 - 2 2 of 7 www.diodes.com DDTCxxxxLP (R1≠R2 Series) © Diodes Incorporated Characteristics Curves of DDTC123JLP @TA = 25°C unless otherwise specified 2 V O=0.3V IO=5mA VI(ON), INPUT VOLTAGE (V) IC, COLLECTOR CURRENT (A) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -30 0 30 60 90 120 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Input Voltage vs. TA VBE, BASE EMITTER VOLTAGE (V) VBE(SAT), BASE EMITTER VOLTAGE (V) 30 IC / IB=10 27 24 21 18 15 12 9 6 3 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 VBE(SAT) vs. IC IC, COLLECTOR CURRENT (mA) Fig. 6 VBE vs IC VCE =5V 300 hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR VOLTAGE (V) 350 250 200 150 100 50 0 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 8 DC Current Gain DS30755 Rev. 4 - 2 IC, COLLECTOR CURRENT (mA) Fig. 9 VCE(SAT) vs. IC 3 of 7 www.diodes.com DDTCxxxxLP (R1≠R2 Series) © Diodes Incorporated @TA = 25°C unless otherwise specified 0.05 15 0.04 12 VI(ON), INPUT VOLTAGE (V) IC, COLLECTOR CURRENT (A) Characteristics Curves of DDTC143ZLP 0.03 0.02 0.01 9 6 3 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.1 1 10 100 VBE, BASE EMITTER VOLTAGE (V) VBE(SAT), BASE EMITTER VOLTAGE (V) IC, OUTPUT CURRENT (mA) Fig. 11 Input Voltage vs. Output Current IC, COLLECTOR CURRENT (mA) Fig. 12 VBE vs. IC IC, COLLECTOR CURRENT (mA) Fig. 13 VBE(SAT) vs. IC 100 350 VCE(SAT), COLLECTOR VOLTAGE (V) VCE =5V hFE, DC CURRENT GAIN 300 250 200 150 100 50 IC / IB =10 10 1 0.1 0.01 0 0.1 1 10 100 1000 0.1 IC, COLLECTOR CURRENT (mA) Fig. 14 DC Current Gain DS30755 Rev. 4 - 2 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 15 VCE(SAT) vs. IC 4 of 7 www.diodes.com DDTCxxxxLP (R1≠R2 Series) © Diodes Incorporated Characteristics Curves of DDTC114YLP @TA = 25°C unless otherwise specified 1.5 0.1 V O=0.3V IO=5mA 0.08 VI(ON), INPUT VOLTAGE (V) IC , COLLECTOR CURRENT (A) 0.09 0.07 0.06 0.05 0.04 0.03 1.2 0.9 0.6 0.3 0.02 0.01 0 -60 0 0 1 2 3 4 5 6 7 8 9 10 -30 0 30 60 90 120 150 VBE, BASE EMITTER VOLTAGE (V) VBE(SAT), BASE EMITTER VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C) Fig. 17 Input Voltage vs. TA IC, COLLECTOR CURRENT (mA) Fig. 19 VBE(SAT) vs. IC IC, COLLECTOR CURRENT (mA) Fig. 18 VBE vs. IC 10 350 hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR VOLTAGE (V) V CE=5V 300 250 200 150 100 50 IC / IB=10 1 0.1 0.01 0 0.1 1 10 100 0.1 1000 DS30755 Rev. 4 - 2 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 21 VCE(SAT) vs. IC IC, COLLECTOR CURRENT (mA) Fig. 20 DC Current Gain 5 of 7 www.diodes.com DDTCxxxxLP (R1≠R2 Series) © Diodes Incorporated Ordering Information Notes: (Note 5) Marking Code Packaging Shipping Device N0 DFN1006-3 3000/Tape & Reel DDTC123JLP-7-F N1 DFN1006-3 3000/Tape & Reel DDTC143ZLP-7-F N2 DFN1006-3 3000/Tape & Reel DDTC114YLP-7-F 5. For Packaging Details, please see below or go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Nx = Product Type Marking Code, see ordering information above YM = Date Code Marking Y = Year e.g. U = 2007 M = Month e.g. 9 = September Nx Fig. 22 Date Code Key Year 2007 U Code 2008 V 2009 W 2010 X Month Jan Feb Mar Apr May Jun Jul Code 1 2 3 4 5 6 7 2011 Y Aug 8 Sep 9 2012 Z Oct O Nov N Dec D Mechanical Details DFN1006-3 G H A K M B C N D L Fig. 23 Dim Min Max Typ A 0.95 1.075 1.00 B 0.55 0.675 0.60 C 0.45 0.55 0.50 D 0.20 0.30 0.25 G 0.47 0.53 0.50 H 0 0.05 0.03 K 0.10 0.20 0.15 L 0.20 0.30 0.25 M ⎯ ⎯ 0.35 N ⎯ ⎯ 0.40 All Dimensions in mm Suggested Pad Layout: (Based on IPC-SM-782) C DFN1006-3 X1 X G2 Z 1.1 G1 0.3 G2 0.2 X 0.7 X1 0.25 Y 0.4 C 0.7 All Dimensions in mm Y G1 Z Fig. 24 DS30755 Rev. 4 - 2 6 of 7 www.diodes.com DDTCxxxxLP (R1≠R2 Series) © Diodes Incorporated IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30755 Rev. 4 - 2 7 of 7 www.diodes.com DDTCxxxxLP (R1≠R2 Series) © Diodes Incorporated