NPN BUW13 - BUW13A HIGH VOLTAGE, HIGH SPEED POWER TRANSISTOR The BUW13-A are silicon NPN power transistor in TO3PN package. They are intended for use in switching regulators, motor control systems, inverters and converters. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM IB IBM Pt TJ TStg Value Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Current Peak Base Current Base Current Peak Total Power Dissipation Junction Temperature Storage Temperature IB = 0 IE = 0 IC = 0 BUW13 BUW13A 400 850 450 1000 @ TC = 25° 9 15 30 6 9 175 150 -65 to 175 Unit V V V A A A A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case COMSET SEMICONDUCTORS Value Unit 0.7 °C/W 1/3 NPN BUW13 - BUW13A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCEO(SUS) Collector-Emitter Sustaining Voltage ICES Collector Cutoff Current IEBO VCE(SAT) VBE(SAT) Emitter Cutoff Current Collector-Emitter saturation Voltage Base-Emitter saturation Voltage Test Condition(s) IC= 100 mA , IB= 0 A L= 25 mH VCE= VCEMax VBE= 0 V VCE= VCEMax, VBE= 0 V Tcase = 125°C VEB= 9 V, IC= 0 A IC= 10 A , IB= 2 A IC= 8 A , IB= 1.6 A IC= 10 A , IB= 2 A IC= 8 A , IB= 1.6 A IC=20 mA , VCE=5 V hFE DC Current Gain IC=1.5 A , VCE=5 V BUW13 BUW13A BUW13 BUW13A BUW13 BUW13A BUW13 BUW13A BUW13 BUW13A BUW13 BUW13A BUW13 BUW13A BUW13 BUW13A Min Typ Mx Unit 400 450 - - V - - 1 mA - - 4 - - 10 - - 1.5 - - 1.6 10 - 35 mA V 10 - 35 Typ Mx - 1.2 1.5 - 0.6 1.1 - 0.17 0.25 SWITCHING TIMES Symbol Ratings ton Turn-on time ts Storage time tf File time 29/09/2012 Test Condition(s) For BUW13 IC= 10 A , IB1 = -IB2 = 2 A For BUW13A IC= 8 A , IB1 = -IB2 = 1.6 A COMSET SEMICONDUCTORS Min Unit µs 2/3 NPN BUW13 - BUW13A MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package DIMENSIONS (mm) Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : 15.20 1.90 4.60 3.10 0.35 5.35 20.00 19.60 0.95 4.80 Max. 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20 Base Collector Emitter Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 29/09/2012 [email protected] COMSET SEMICONDUCTORS 3/3