SPICE MODELS: MMSTA55 MMSTA56 MMSTA55/MMSTA56 Lead-free Green PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (MMSTA05/MMSTA06) A Ideal for Low Power Amplification and Switching C SOT-323 Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal Ultra-Small Surface Mount Package B C Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) B E G E 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 Moisture Sensitivity: Level 1 per J-STD-020C L 0.25 0.40 Terminal Connections: See Diagram M 0.10 0.18 α 0° 8° Mechanical Data • • H K Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 • • • • M J D E L C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • • • • All Dimensions in mm MMSTA55 Marking K2H, K2G (See Page 2) B MMSTA56 Marking K2G (See Page 2) E Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol MMSTA55 MMSTA56 Unit Collector-Base Voltage Characteristic VCBO -60 -80 V Collector-Emitter Voltage VCEO -60 -80 V Emitter-Base Voltage VEBO -4.0 V Collector Current - Continuous (Note 1) IC -500 mA Power Dissipation (Note 1) Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30167 Rev. 9 - 2 1 of 4 www.diodes.com MMSTA55/MMSTA56 Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage MMSTA55 MMSTA56 V(BR)CBO -60 -80 V IC = -100µA, IE = 0 Collector-Emitter Breakdown Voltage MMSTA55 MMSTA56 V(BR)CEO -60 -80 V IC = -1.0mA, IB = 0 V(BR)EBO -4.0 V IE = -100µA, IC = 0 ICBO -100 nA ICEX -100 nA hFE 100 IC = -10mA, VCE = -1.0V IC = -100mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) -0.25 V IC = -100mA, IB = -10mA Base-Emitter Saturation Voltage VBE(SAT) -1.2 V IC = -100mA, VCE = -1.0V fT 50 MHz VCE = -1.0V, IC = -100mA, f = 100MHz Emitter-Base Breakdown Voltage Collector Cutoff Current MMSTA55 MMSTA56 MMSTA55 MMSTA56 Collector Cutoff Current VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCE = -60V, IBO = 0V VCE = -80V, IBO = 0V ON CHARACTERISTICS (Note 5) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Ordering Information (Note 4 & 6) Notes: Device Packaging Shipping MMSTA55-7-F MMSTA56-7-F SOT-323 3000/Tape & Reel 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 5. Short duration pulse test used to minimize self-heating effect. 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K2x = Product Type Marking Code, e.g. K2H = MMSTA55 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K2x Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code J K L M N P R S T U V W X Y Z Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30167 Rev. 9 - 2 2 of 4 www.diodes.com MMSTA55/MMSTA56 0.25 200 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) Note 1 150 100 50 IC IB = 10 0.20 TA = 25°C 0.15 0.10 TA = 150°C 0 0 0 25 50 75 100 125 150 175 VBE(ON), BASE EMITTER VOLTAGE (V) TA = 150°C 100 TA = 25°C TA = -50°C 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1.0 VCE = 5V hFE, DC CURRENT GAIN 1 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1000 0.9 VCE = 5V 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 10 10 1 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current 100 fT, GAIN BANDWIDTH PRODUCT (MHz) TA = -50°C 0.05 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Base Emitter Voltage vs. Collector Current VCE = 5V 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Gain Bandwidth Product vs. Collector Current DS30167 Rev. 9 - 2 3 of 4 www.diodes.com MMSTA55/MMSTA56 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30167 Rev. 9 - 2 4 of 4 www.diodes.com MMSTA55/MMSTA56