CDIL CMBTA55 Silicon epitaxial transistor Datasheet

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBTA55
CMBTA56
SILICON EPITAXIAL TRANSISTORS
P–N–P transistor
Marking
CMBTA55 = 2H
CMBTA56 = 2G
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to Tamb = 25 °C
D.C. current gain
–IC = 100 mA; –VCE = 1 V
Transition frequency at f = 100 MHz
–IC = 100 mA; –VCE = 1 V
Collector–emitter saturation voltage
–IC = 100 mA; IB = 10 mA
Continental Device India Limited
–V CBO
–V CEO
–V EBO
–IC
Ptot
CMBT A55
max. 60
max. 60
max.
max.
4
500
250
hFE
min.
100
fT
min.
50
VCEsat
max.
0.25
Data Sheet
A56
80 V
80 V
V
mA
mW
MHz
V
Page 1 of 3
CMBTA55
CMBTA56
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to Tamb = 25 °C
Storage temperature
Junction temperature
–V CBO
–V CEO
–V EBO
–IC
Ptot
Tstg
Tj
THERMAL CHARACTERISTICS
Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb
Thermal resistance
from junction to ambient
Rth j–a
CMBT A55
max. 60
max. 60
max.
max.
max.
–55
max.
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector–emitter breakdown voltage
CMBTA55
–V(BR)CEO min. 60
–IC = 1 mA; IB = 0
Emitter–base breakdown voltage
–V(BR)EBO min.
–IC = 0; IE = 100 µA
Collector cut–off current
–I CEO
max.
–VCE = 60 V; IB = 0
–I CBO
max. 0.1
–VCB = 60 V; IE = 0
–I CBO
max.
–VCB = 80 V; IE = 0
Saturation voltages
–V CEsat max.
–IC = 100 mA; –IB = 10 mA
Base–emitter On voltage
–VBE(on) max.
–IC = 100 mA; –VCE = 1 V
D.C. current gain
hFE
min.
–IC = 10 mA; –VCE = 1 V
hFE
min.
–IC = 100 mA; –VCE = 1 V
Transition frequency at f = 100 MHz
fT
min.
–IC = 100 mA; –VCE = 1 V
Continental Device India Limited
Data Sheet
A56
80 V
80 V
4
V
500
mA
250
mW
to +150
°C
150
°C
500
K/W
A56
80 V
4
0.1
V
µA
- µA
0.1 µA
0.25
V
1.2
V
100
100
50
MHz
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
[email protected]
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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