ZXTN23015CFH 15V, SOT23, NPN medium power transistor Summary V(BR)CEX > 60V, V(BR)CEO > 15V IC(CONT) = 6A RCE(SAT) = 19m⍀ typical VCE(SAT) < 30mV @ 1A PD = 1.25W Complementary part number : ZXTP23015CFH Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power dissipation SOT23 package • High peak current • Low saturation voltage • 60V forward blocking voltage Applications E • DC - DC converters • MOSFET and IGBT gate driving • Motor drive • Relay, lamp, and solenoid drive C B Pinout - top view Ordering information Device ZXTN23015CFHTA Reel size (inches) Tape width Quantity per REEL 7 8mm 3000 Device marking 327 Issue 1 - February 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN23015CFH Absolute maximum ratings Parameter Symbol Limit Unit VCBO 60 V Collector-emitter voltage V(BR)CEX 60 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 7.0 V ICM 12 A Continuous collector current(c) IC 6 A Base current IB 1.2 A Power dissipation @ TA=25oC(a) PD 0.73 5.84 W mW/oC PD 1.05 8.4 W mW/oC PD 1.25 9.6 W mW/oC PD 1.81 14.5 W mW/oC Tj:Tstg -55 to +150 oC Symbol Value Unit Junction to ambient(a) R⍜JA 171 o Junction to ambient(b) R⍜JA 119 o Junction to ambient(c) R⍜JA 100 oC/W Junction to ambient(d) R⍜JA 69 oC/W Collector-base voltage Peak pulse current Linear derating factor(a) Power dissipation @ TA=25oC(b) Linear derating factor(b) Power dissipation @ TA=25oC(c) Linear derating factor(c) Power dissipation @ TA=25oC(d) Linear derating factor(d) Operating and storage temperature Thermal resistance Parameter C/W C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - February 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN23015CFH Characteristics Issue 1 - February 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN23015CFH Electrical characteristics (at TAMB = 25°C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol V(BR)CBO Min. 60 Typ. 85 Max. Unit V Conditions IC=100A V(BR)CEX 60 85 V IC =100A, RBE < 1k⍀ OR -1V < VBE < 0.25V Collector-emitter breakdown V(BR)CEO voltage Emitter-base breakdown voltage V(BR)EBO 15 23 V IC=10mA (*) 7.0 8.3 V IE=100A Collector-emitter cut-off current ICEX - 100 nA VCE = 48V, RBE < 1k⍀ OR -1V < VBE < 0.25V Collector-base cut-off current ICBO <1 20 nA VCB=48V Emitter-base cut-off current IEBO <1 10 nA VEB=6V Static forward current transfer ratio HFE Collector-emitter saturation voltage Base-emitter saturation voltage 160 300 200 350 190 330 IC=3A, VCE=2V(*) 150 280 IC=6A, VCE=2V(*) VCE(sat) VBE(sat) IC=10mA, VCE=2V(*) 560 IC=500mA, VCE=2V(*) 7 15 mV IC=0.1A, IB=5mA(*) 22 30 mV IC=1A, IB=100mA(*) 70 90 mV IC=3A, IB=60mA(*) 130 180 mV IC=6A, IB=120mA(*) 0.83 0.93 V IC=3A, IB=60mA(*) 0.89 0.98 V IC=6A, IB=120mA(*) 0.91 V IC=6A, VCE=2V(*) Base-emitter turn-on voltage VBE(on) 0.81 Transition frequency fT 235 MHz Output capacitance Cobo 56 pF Delay time t (d) 15 ns Rise time t (r) 38.5 ns Storage time t (stg) 213 ns Fall time t (f) 19.7 ns Ic=500mA, VCE=2V, f=50MHz VCB=10V, f=1MHz VCC=5V, IC=3A, IB1=IB2=150mA NOTES: (*) Measured under pulsed conditions. Pulse width = 300S. Duty cycle ⱕ2%. Issue 1 - February 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN23015CFH Typical characteristics Issue 1 - February 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN23015CFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.0375 NOM - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - February 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com