SPICE MODEL: DMN2004VK DMN2004VK NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Low Gate Threshold Voltage A Low Input Capacitance Min Max Typ A 0.15 0.30 0.25 B 1.10 1.25 1.20 C 1.55 1.70 1.60 Fast Switching Speed Low Input/Output Leakage B C Ultra-Small Surface Mount Package D Lead Free By Design/RoHS Compliant (Note 2) D ESD Protected Gate up to 2 kV G "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability M K Mechanical Data · · Case: SOT-563 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Marking: See Page 2 H D2 G1 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.56 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 S1 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Ordering & Date Code Information: See Page 2 ESD protected up to 2kV Weight: 0.006 grams (approximate) S2 Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 3) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range 1. 2. 3. 4. G2 D1 @ TA = 25°C unless otherwise specified Characteristic Note: Dim Symbol Value Units VDSS 20 V VGSS ±8 V ID 540 390 mA IDM 1.5 A Pd 250 mW RqJA 500 °C/W Tj, TSTG -65 to +150 °C Device mounted on FR-4 PCB. No purposefully added lead. Pulse width £10mS, Duty Cycle £1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30865 Rev. 2 - 2 1 of 4 www.diodes.com DMN2004VK ã Diodes Incorporated @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 20 ¾ ¾ V VGS = 0V, ID = 10mA Zero Gate Voltage Drain Current IDSS ¾ ¾ 1 mA VDS = 16V, VGS = 0V Gate-Source Leakage IGSS ¾ ¾ ±1 mA VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ¾ 1.0 V VDS = VGS, ID = 250mA RDS (ON) ¾ 0.4 0.5 0.7 0.55 0.70 0.9 W VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| 200 ¾ ¾ ms VDS =10V, ID = 0.2A Diode Forward Voltage (Note 5) VSD 0.5 ¾ 1.4 V Input Capacitance Ciss ¾ ¾ 150 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 20 pF OFF CHARACTERISTICS (Note 5) ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS Notes: VDS = 16V, VGS = 0V f = 1.0MHz 5. Short duration test pulse used to minimize self-heating effect. 0.9 1000 VGS = 2.2V VDS = 10V Pulsed 900 VGS = 2.0V VGS = 1.8V 0.6 ID, DRAIN CURRENT (mA) ID, DRAIN CURRENT (A) 800 VGS = 1.6V VGS = 1.4V 0.3 700 600 500 400 TA = 150° C 300 200 TA = 85° C TA = -55° C 0 0.4 0 0 1 TA = 25° C 100 VGS = 1.2V 2 5 4 3 1 0.8 1.2 1.6 2 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Electrical Characteristics 1 0.9 VDS = 10V 0.8 Pulsed VGS = 10V Pulsed ID = 1mA 0.7 TA = 125° C 0.6 TA = 150° C TA = 85° C 0.5 0.4 0.3 0.2 TA = -55° C 0.1 0 -75 TA = 25° C -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature DS30865 Rev. 2 - 2 TA = 0° C TA = -25° C 0.1 0.2 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 2 of 4 www.diodes.com DMN2004VK 1 NEW PRODUCT 1.0 TA = 25°C VGS = 5V Pulsed 0.9 0.8 TA = 125° C TA = 150° C TA = 85° C 0.7 0.6 ID = 540mA 0.5 0.4 0.3 TA = -55° C TA = 25° C TA = 0° C 0.2 TA = -25° C 0.1 0 0.1 0.2 0.6 0.4 6 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 1 2 0 1.0 0.8 0.5 Tj = 25°C 0.9 0.4 0.8 VGS = 1.8V VGS = 4.5V, ID = 540mA 0.7 0.3 0.6 VGS = 10V, ID = 280mA 0.2 0.5 VGS = 2.5V 0.4 0.1 VGS = 4.5V 0.3 0.2 0.4 0.2 0 0.6 0.8 1 0 -50 1.2 -25 0 25 50 75 100 125 150 Tj, JUNCTION TEMPERATURE (° C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage 10000 1 1000 IDR, REVERSE DRAIN CURRENT (A) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) VGS = 0V Tj = 150°C 100 Tj = 100°C 10 1 TA = 150° C 0.1 TA = 125° C TA = 85° C TA = 25° C 0.01 TA = 0° C TA = -25° C TA = -55° C 0.1 0.001 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Drain Source Leakage Current vs. Voltage DS30865 Rev. 2 - 2 3 of 4 www.diodes.com 0 1 0.5 VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Reverse Drain Current vs. Source-Drain Voltage DMN2004VK TA = -55° C VGS = 10V f = 1MHz VGS = 0V 100 C, CAPACITANCE (pF) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) NEW PRODUCT 120 1 TA = 25° C TA = 85° C 0.1 TA = 150° C Ciss 80 60 40 Coss 20 Crss 0.01 0 1 10 1000 100 0 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current Ordering Information Notes: 4 2 6 8 10 12 14 16 18 20 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation (Note 6) Device Packaging Shipping DMN2004VK-7 SOT-563 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information D2 G1 S1 NAB = Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September NAB YM S2 G2 D1 Date Code Key Year 2006 2007 2008 2009 Code T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30865 Rev. 2 - 2 4 of 4 www.diodes.com DMN2004VK