NTE NTE352 Silicon complementary transistors digital w/2 built-in bias 47k resistors (surface mount) Datasheet

NTE352
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V
VHF large–signal power amplifier applications required in commercial and industrial FM equipment
to 175MHz.
Features:
D Specified 12.5V, 175MHz Characteristics:
Output Power = 75W
Minimum Gain = 7.0dB
Efficiency = 55%
D Characterized with Series Equivalent large–Signal Impedance Parameters
D Internal Matching Network Optimized for Minimum Gain Frequency Slope Response over the
Range 136 to 175MHz
D Load Mismatch capability at Rated POUT and Supply Voltage
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current (Peak), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Device Dissipation (Note 1, TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resuistance, Junction–to–Case (Note 2), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7°C/W
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Note 2. Thermal Resistance is determined under specified RF operating conditions by infrared
measurement techniques.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V(BR)CEO IC = 100mA, IB = 0
18
–
–
V
V(BR)CES IC = 50mA, VBE = 0
36
–
–
V
V(BR)EBO IE = 10mA, IC = 0
4
–
–
V
10
75
150
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
ON Characteristics
DC Current Gain
hFE
IC = 5A, VCE = 5V
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
235
300
pF
Dynamic Characteristics
Output Capacitance
Cob
VCB = 15V, IE = 0, f = 0.1MHz
Functional Tests (VCC = 12.5V unless otherwise specified)
Common–Emitter Amplifier
Power Gain
Collector Efficiency
GPE
Pout = 75W, f = 175MHz
7.0
8.5
–
dB
η
Pout = 75W, f = 175MHz
55
60
–
%
Load Mismatch
Pout = 75W, f = 175MHz,
VSWR = 30:1, All Phase Angles
No Degradation in
Output Power
.215 (5.48)
.205 (5.18)
.122 (3.1) Dia
E
B
.405
(10.3)
Min
C
E
.155 (3.94)
.500 (12.7) Dia
.005 (0.15)
.270
(6.85)
.160 (4.06)
.725 (18.43)
.975 (24.78)
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