DIODES ZXTN25020BFH

ZXTN25020BFH
20V, SOT23, NPN medium power transistor
Summary
BVCEX > 50V
BVCEO > 20V
BVECO > 3V
IC(cont) = 4.5A
VCE(sat) < 45 mV @ 1A
RCE(sat) = 27 m⍀
PD = 1.25W
Complementary part number ZXTP25020BFH
Description
C
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
High power dissipation SOT23 package
•
High peak current
•
Low saturation voltage
•
50V forward blocking voltage
•
3V reverse blocking voltage
E
E
Applications
•
MOSFET gate drivers
•
Motor control
•
DC-DC converters
C
B
Pinout - top view
Ordering information
Device
ZXTN25020BFHTA
Reel size
(inches)
Tape width
(mm)
Quantity per
reel
7
8
3,000
Device marking
1B1
Issue 1 - May 2006
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ZXTN25020BFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage (forward blocking)
VCEX
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-collector voltage (reverse blocking)
VECO
3
V
Emitter-base voltage
VEBO
7
V
Continuous collector current(c)
IC
4.5
A
Base current
IB
1
A
Peak pulse current
ICM
10
A
Power dissipation at Tamb =25°C(a)
PD
0.73
W
5.84
mW/°C
1.05
W
8.4
mW/°C
1.25
W
9.6
mW/°C
1.81
W
14.5
mW/°C
Tj, Tstg
- 55 to 150
°C
Symbol
Limit
Unit
Junction to ambient(a)
R⍜JA
171
°C/W
Junction to ambient(b)
R⍜JA
119
°C/W
Junction to ambient(c)
R⍜JA
100
°C/W
Junction to ambient(d)
R⍜JA
69
°C/W
Linear derating factor
PD
Power dissipation at Tamb =25°C(b)
Linear derating factor
PD
Power dissipation at Tamb =25°C(c)
Linear derating factor
PD
Power dissipation at Tamb =25°C(d)
Linear derating factor
Operating and storage temperature range
Thermal graphs
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
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ZXTN25020BFH
Characteristics
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ZXTN25020BFH
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Symbol
BVCBO
Min.
50
Typ.
90
BVCEX
50
90
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
BVCEO
20
27
V
IC = 10mA (*)
BVEBO
7
8
V
IE = 100␮A
BVECX
6
7
V
IE = 100␮A, RBC < 1k⍀ or
0.25V > VBC > -0.25V
Emitter-collector breakdown
voltage (base open)
Collector-base cut-off current
BVECO
3
4.7
V
IE = 100␮A,
ICBO
Collector-emitter cut-off current ICEX
Max.
Unit Conditions
V IC = 100␮A
IC = 100␮A, RBE < 1k⍀ or
-1V < VBE < 0.25V
<1
50
20
nA
␮A
VCB = 40V
VCB = 40V, Tamb= 100°C
-
100
nA
VCE = 40V; RBE < 1k⍀ or
-1V < VBE < 0.25V
VEB = 5.6V
Emitter-base cut-off current
IEBO
<1
50
nA
Collector-emitter saturation
voltage
VCE(sat)
35
45
mV I = 1A, I = 100mA(*)
C
B
55
80
mV I = 1A, I = 20mA(*)
C
B
90
115
mV I = 2A, I = 40mA(*)
C
B
175
240
mV I = 4.5A, I = 90mA(*)
C
B
120
145
mV I = 4.5A, I = 450mA(*)
C
B
Base-emitter saturation voltage
VBE(sat)
910
1000
mV I = 4.5A, I = 90mA(*)
C
B
Base-emitter turn-on voltage
VBE(on)
825
900
mV I = 4.5A, V = 2V(*)
C
CE
Static forward current transfer
ratio
hFE
100
200
300
100
210
IC = 1A, VCE = 2V(*)
75
160
IC = 4.5A, VCE = 2V(*)
30
70
IC = 10A, VCE = 2V(*)
Transition frequency
fT
185
Output capacitance
COBO
22.7
Delay time
td
Rise time
IC = 10mA, VCE = 2V(*)
MHz IC = 50mA, VCE = 10V
f = 100MHz
30
pF
VCB = 10V, f = 1MHz(*)
87
ns
tr
119
ns
Storage time
ts
146
ns
VCC = 10V.
IC = 1A,
IB1 = IB2= 10mA.
Fall time
tf
61
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
Issue 1 - May 2006
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ZXTN25020BFH
Typical characteristics
Issue 1 - May 2006
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ZXTN25020BFH
Package outline - SOT23
L
H
N
G
D
3 leads
M
A
B
C
K
Dim.
F
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
-
1.10
D
0.37
F
0.085
G
Dim.
Millimeters
Inches
Min.
Max.
Max.
Max.
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
-
0.043
L
2.10
2.50
0.083
0.0985
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
0.15
0.0034
0.0059
N
0.95 NOM
-
-
1.90 NOM
0.075 NOM
0.0375 NOM
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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Oldham, OL9 9LL
United Kingdom
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Fax: (49) 89 45 49 49 49
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Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
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Fax: (852) 24250 494
asia.sales@zetex.com
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
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This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
6
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