Panasonic MA3X704A Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA3X704, MA3X704A
Silicon epitaxial planar type
Unit : mm
+ 0.2
2.8 − 0.3
Reverse voltage
(DC)
MA3X704
Peak reverse
voltage
MA3X704
Symbol
Rating
Unit
VR
15
V
MA3X704A
15
IFM
150
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode
EIAJ : SC-59
Mini Type Package (3-pin)
V
mA
30
Forward current (DC)
IF
30
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1.45
+ 0.1
+ 0.1
0.16 − 0.06
0.1 to 0.3
0.4 ± 0.2
30
VRM
MA3X704A
Peak forward current
3
0 to 0.1
Parameter
0.95
1.9 ± 0.2
1.1
■ Absolute Maximum Ratings Ta = 25°C
1
2
+ 0.2
− 0.1
• Low forward rise voltage (VF) and satisfactory wave detection
efficiency (η)
• Small temperature coefficient of forward characteristic
• Extremely low reverse current IR
0.65 ± 0.15
0.8
■ Features
1.5
0.95
+ 0.2
2.9 − 0.05
0.65 ± 0.15
+ 0.25
− 0.05
0.4 − 0.05
For switching circuits
For wave detection circuit
Marking Symbol
• MA3X704 : M1K • MA3X704A : M1L
Internal Connection
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Symbol
MA3X704
Conditions
IR
MA3X704A
Forward voltage (DC)
Min
Typ
Max
Unit
VR = 15 V
200
nA
VR = 30 V
300
VF1
IF = 1 mA
0.4
V
VF2
IF = 30 mA
1
V
Terminal capacitance
Ct
VR = 1 V, f = 1 MHz
1.5
pF
Reverse recovery time*
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1
ns
Detection efficiency
η
Vin = 3 V(peak), f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1
MA3X704, MA3X704A
Schottky Barrier Diodes (SBD)
Common characteristics charts
IF  V F
VF  Ta
103
1.0
0.9
75°C 25°C
Ta = 125°C
0.8
− 20°C
10
1
10−1
Forward voltage VF (V)
Forward current IF (mA)
102
0.7
IF = 30 mA
0.6
10 mA
0.5
0.4
0.3
1 mA
0.2
0.1
10−2
0
0.2
0.4
0.6
0.8
1.0
0
−40
1.2
Forward voltage VF (V)
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of MA3X704
IR  VR
Ct  VR
103
IR  Ta
102
3
f = 1 MHz
Ta = 25°C
Ta = 125°C
10
75°C
1
25°C
10−1
10−2
0
5
10
15
20
25
2
1
0
30
Reverse current IR (µA)
Terminal capacitance Ct (pF)
Reverse current
IR (µA)
102
VR = 15 V
7.5 V
0
Reverse voltage VR (V)
5
10
15
20
25
10
1
10−1
10−2
−40
30
Reverse voltage VR (V)
0
40
80
120
160
200
Ambient temperature Ta (°C)
Characteristics charts of MA3X704A
IR  VR
Ct  VR
103
IR  T a
102
3
VR = 30 V
15 V
Ta = 125°C
10
75°C
1
25°C
10−1
10−2
0
5
10
15
20
25
Reverse voltage VR (V)
2
30
Reverse current IR (µA)
Reverse current IR (µA)
102
Terminal capacitance Ct (pF)
f = 1 MHz
Ta = 25°C
2
1
0
0
5
10
15
20
25
Reverse voltage VR (V)
30
10
1
10−1
10−2
−40
0
40
80
120
160
Ambient temperature Ta (°C)
200
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