Fuji FMR23N50ES N-channel silicon power mosfet Datasheet

FMR23N50ES
FUJI POWER MOSFET
Super FAP-E3S series
N-CHANNEL SILICON POWER MOSFET
Features
Outline Drawings [mm]
Maintains both low power loss and low noise
Lower RDS (on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.2±0.5V)
High avalanche durability
Equivalent circuit schematic
TO-3PF
Drain(D)
Applications
Gate(G)
Source(S)
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
I DP
VGS
I AR
E AS
E AR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Drain-Source Voltage
Characteristics
500
500
±23
±92
±30
23
767.3
15
5.4
100
3.13
130
150
-55 to + 150
2
Tch
Tstg
VISO
Operating and Storage Temperature range
Isolation Voltage
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
W
°C
°C
kVrms
t = 60sec, f = 60Hz
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Symbol
BVDSS
VGS (th)
Zero Gate Voltage Drain Current
I DSS
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
I GSS
R DS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
Q GS
Q GD
Q SW
I AV
VSD
trr
Qrr
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Drain Crossover Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Conditions
I D =250µA, VGS =0V
I D =250µA, VDS =VGS
VDS =500V, VGS =0V
VDS =400V, VGS =0V
VGS =±30V, VDS =0V
I D =11.5A, VGS =10V
I D =11.5A, VDS =25V
Tch =25°C
Tch =125°C
VDS =25V
VGS =0V
f=1MHz
Vcc =300V
VGS =10V
I D =11.5A
RGS =10Ω
Vcc =250V
I D =23A
VGS =10V
L=1.16mH, Tch =25°C
I F =23A, VGS =0V, Tch =25°C
I F =23A, VGS =0V
-di/dt=100A/µs, Tch=25°C
min.
500
3.7
8.5
23
-
typ.
4.2
10
0.209
17
2700
330
20
42
36
94
17
73
24
27
10
0.90
0.5
8.0
max.
4.7
25
250
100
0.245
4050
495
30
63
54
141
25.5
109.5
36
40.5
15
1.35
-
Unit
V
V
min.
typ.
max.
0.830
40.0
Unit
°C/W
°C/W
µA
nA
Ω
S
pF
ns
nC
A
V
µs
µC
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Note *1 : Tch≤150°C.
Note *2 : Stating Tch=25°C, IAS =10A, L=14.1mH, Vcc=50V, RG =50Ω.
E AS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Test Conditions
Channel to Case
Channel to Ambient
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : I F ≤-I D, -di/dt=100A/μs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : I F ≤-I D, dv/dt=5.4kV/μs, Vcc≤BVDSS, Tch≤150°C.
1
FMR23N50ES
160
FUJI POWER MOSFET
Allowable Power Dissipation
PD=f(Tc)
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
2
10
t=
1µs
140
10µs
1
10
120
0
10
80
ID [A]
PD [W]
100
100µs
60
10
-1
10
-2
10
-3
1ms
Power loss waveform :
Square waveform
40
PD
20
t
0
0
70
25
50
75
Tc [°C]
100
125
150
10
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
100
0
1
10
VDS [V]
10
2
3
10
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
60
10V
10
8.0V
40
ID[A]
ID [A]
50
7.5V
30
1
7.0V
20
6.5V
10
VGS=6.0V
0.1
0
0
100
4
8
12
VDS [V]
16
20
0
24
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
0.7
0.6
10
2
4
6
VGS[V]
8
10
12
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
VGS=6.0V
6.5V
7V
gfs [S]
RDS(on) [ Ω ]
0.5
1
0.4
8V
10V
20V
0.3
0.2
0.1
0.1
0.1
1
10
100
0
10
20
30
ID [A]
ID [A]
2
40
50
60
FMR23N50ES
1.0
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=11.5A,VGS=10V
8
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7
0.8
VGS(th) [V]
RDS(on) [ Ω ]
6
0.6
0.4
max.
typ.
0.2
5
max.
4
typ.
3
min.
2
1
0.0
-50
14
-25
0
25
50
Tch [°C]
75
100
125
0
150
-50
Typical Gate Charge Characteristics
VGS=f(Qg):ID=23A,Tch=25 °C
12
-25
0
25
50
75
Tch [°C]
100
125
150
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
4
10
Vcc= 100V
250V
400V
10
Ciss
3
10
C [pF]
VGS [V]
8
6
2
10
Coss
4
1
10
Crss
2
0
0
0
20
40
60
80
100
10
120
-2
10
-1
10
10
Qg [nC]
100
0
1
2
10
10
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
10
3
10
2
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=8.2 Ω
td(off)
10
tf
t [ns]
IF [A]
td(on)
tr
1
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
10
1
10
0
10
-1
0
1
10
10
ID [A]
VSD [V]
3
10
2
FMR23N50ES
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=23A
800
10
0
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
IAS=23A
600
Zth(ch-c) [°C/W]
700
IAS=14A
500
EAV [mJ]
10
1
400
IAS=10A
-1
10
-2
10
300
200
-3
10
-6
10
100
-5
10
-4
10
10
-3
t [sec]
0
0
25
50
75
100
125
150
starting Tch [ C]
4
-2
10
10
-1
0
10
FMR23N50ES
FUJI POWER MOSFET
WARNING
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Catalog, be sure to obtain the latest specifications.
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