H5N2003P Silicon N Channel MOS FET High Speed Power Switching REJ03G0235-0100Z Rev.1.00 Apr.09.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D 1. Gate 2. Drain (Flange) 3. Source G S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to Source voltage VDSS Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 200 ±30 60 240 60 240 V V A A A A Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature IAP Pch Note2 θch-c Tch Tstg 40 150 0.833 150 –55 to +150 A W °C/W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Rev.1.00, Apr.09.2004, page 1 of 6 Note3 H5N2003P Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage V(BR)DSS IDSS IGSS VGS(off) 200 — — 3.0 — — — — — 1 ±0.1 4.0 V µA µA V ID = 10 mA, VGS = 0 VDS = 200 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time RDS(on) 26 — 44 0.032 — 0.042 S Ω ID = 30 A, VDS = 10 V Note4 ID = 30 A, VGS = 10 VNote4 Ciss Coss Crss td(on) tr td(off) — — — — — — 5150 660 110 65 260 200 — — — — — — pF pF pF ns ns ns VDS = 25 V VGS = 0 f = 1 MHz Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time tf Qg Qgs Qgd VDF trr — — — — — — 180 132 30 60 1.0 190 — — — — 1.5 — ns nC nC nC V ns Body-Drain diode reverse recovery charge Qrr — 1.4 — µC Notes: 4. Pulse test Rev.1.00, Apr.09.2004, page 2 of 6 ID = 30 A VGS = 10 V RL = 3.33 Ω Rg = 10 Ω VDD = 160 V VGS = 10 V ID = 60 A IF = 60 A, VGS = 0 Note4 IF = 60 A, VGS = 0 diF/dt = 100 A/µs H5N2003P Main Characteristics Power vs. Temperature Derating (1 sh ot tio ra ID (A) 3 ) n 25 ) °C Operation in this area is limited by RDS(on) 1 = 50 100 Case Temperature 150 Ta = 25°C 0.1 0.1 0.3 1 3 10 30 100 300 1000 Drain to Source Voltage VDS (V) 200 Tc (°C) Typical Output Characteristics 100 10 V 8V Typical Transfer Characteristics 200 Pulse Test VDS = 10 V Pulse Test 7V 80 6V 60 40 20 0 ID (A) 160 120 Drain Current ID (A) s 0.3 0 Drain Current m c (T Drain Current 10 µs 10 pe 50 = µs 0 30 O 100 PW 10 100 s m 150 1 Pch (W) 10 300 DC Channel Dissipation Maximum Safe Operation Area 1000 200 VGS = 5 V 4 8 12 Drain to Source Voltage 3 ID = 60 A 2 Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) Pulse Test 40 Tc = 75°C 0 16 20 VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 4 80 25°C −25°C 2 4 6 Gate to Source Voltage 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 0.1 VGS = 10 V, 15 V 0.05 0.02 0.01 0.005 30 A 1 10 A 0 0.002 Pulse Test 0.001 12 4 8 Gate to Source Voltage Rev.1.00, Apr.09.2004, page 3 of 6 16 20 VGS (V) 1 3 10 30 100 300 Drain Current ID (A) 1000 0.08 ID = 60 A 30 A 0.06 0.04 10 A 0.02 0 −25 0 25 50 75 Case Temperature 100 125 150 10 25°C 3 75°C 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 3 1 Drain Current 100 ID (A) Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 200 100 50 20 10 5 di / dt = 100 A / µs VGS = 0, Ta = 25°C 2 30 10 VGS = 0 f = 1 MHz 30000 10000 Ciss 3000 Coss 1000 300 Crss 100 30 10 0 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Dynamic Input Characteristics VGS 12 200 8 VDS 100 4 VDD = 160 V 100 V 50 V 40 80 Gate Charge Rev.1.00, Apr.09.2004, page 4 of 6 120 160 Qg (nC) 0 200 Switching Time t (ns) VDD = 50 V 100 V 160 V 300 VGS (V) ID = 60 A 50 100 150 Drain to Source Voltage VDS (V) Switching Characteristics 10000 16 Gate to Source Voltage 400 VDS (V) Tc = −25°C 100000 1 0.1 Drain to Source Voltage 30 Tc (°C) 500 0 100 Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 0.1 VGS = 10 V Pulse Test Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) H5N2003P VGS = 10 V, VDD = 125 V PW = 10 µs, duty < 1 % RG = 10 Ω 1000 tf tr td(off) tf 100 td(on) tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 H5N2003P Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Source to Drain Voltage 5 Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current IDR (A) 200 160 120 VGS = 0 V 80 10 V 40 5V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 VDS = 10 V ID = 10 mA 4 1 mA 3 0.1 mA 2 1 0 -25 2.0 VSD (V) 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch − c(t) = γ s (t) • θ ch − c θ ch − c = 0.833°C/W, Tc = 25°C 0.1 0.05 PDM 0.03 0.02 1 0.0 0.01 10 µ D= e PW uls p ot T h 1s PW T 100 µ 1m 100 m 10 m Pulse Width 1 10 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 10Ω Vin 10 V V DD = 100 V Vout 10% 10% 90% td(on) Rev.1.00, Apr.09.2004, page 5 of 6 tr 10% 90% td(off) tf H5N2003P Package Dimensions 15.6 ± 0.3 Unit: mm 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 As of January, 2003 4.8 ± 0.2 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Package Code JEDEC JEITA Mass (reference value) TO-3P — Conforms 5.0 g Ordering Information Part Name Quantity Shipping Container H5N2003P-E 30 pcs Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, Apr.09.2004, page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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