NEC NE325S01-T1 C to ku band super low noise amplifier n-channel hj-fet Datasheet

C to KU BAND SUPER LOW
NOISE AMPLIFIER N-CHANNEL HJ-FET
NE325S01
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
FEATURES
• SUPER LOW NOISE FIGURE:
0.45 dB TYP at 12 GHz
24
VDS = 2 V
ID = 10 mA
• HIGH ASSOCIATED GAIN:
12.5 dB TYP at 12 GHz
• GATE LENGTH: ≤ 0.20 µm
• GATE WIDTH: 200 µm
• LOW COST PLASTIC PACKAGE
Ga
16
1.0
12
0.5
8
DESCRIPTION
NF
0
The NE325S01 is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. Its excellent low noise figure and high
associated gain make it suitable for commercial systems and
industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
1
2
ELECTRICAL CHARACTERISTICS
4
6
8 10
14
20
4
30
Frequency, f (GHz)
RECOMMENDED
OPERATING CONDITIONS (TA = 25°C)
SYMBOLS
CHARACTERISTICS
VDS
Drain to Source Voltage
UNITS MIN TYP MAX
V
2
3
10
20
ID
Drain Current
mA
Pin
Input Power
dBm
0
(TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
Associated Gain, GA (dB)
Noise Figure, NF (dB)
20
PARAMETERS AND CONDITIONS
NE325S01
S01
UNITS
MIN
TYP
MAX
0.45
0.55
NF1
Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz
GA1
Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz
dB
11.0
IDSS
Saturated Drain Current, VDS = 2 V, VGS = 0 V
mA
20
60
Transconductance, VDS = 2 V, ID = 10 mA
mS
45
60
Gate to Source Cutoff Voltage, VDS = 2 V,ID = 100 µA
V
-0.2
-0.7
-2.0
Gate to Source Leak Current, VGS = -3 V
µA
0.5
10
gm
VGS(off)
IGSO
dB
12.5
90
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
NE325S01
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
UNITS
RATINGS
VDS
Drain to Source Voltage
V
4.0
VGS
Gate to Source Voltage
V
-3.0
ID
Drain Current
mA
IDSS
IG
Gate Current
µA
100
PT
Total Power Dissipation
mW
165
TCH
Channel Temperature
°C
125
Tstg
Storage Temperature
°C
-65 to +125
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN CURRENT
VDS = 2V
f = 12 GHz
14
Ga
13
12
2.0
11
1.5
10
1.0
0.5
NF
0
10
20
30
Drain Current, ID (mA)
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
250
100
200
80
Drain Current, ID (mA)
Total Power Dissipation, PT (mW)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
100
VGS = 0 V
60
-0.2 V
40
-0.4 V
20
50
-0.6 V
-0.8 V
0
50
100
150
200
0
250
1.5
3.0
Ambient Temperature, TA (°C)
Drain to Source Voltage, VDS (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
Maximum Stable Gain, MSG (dB)
Maximum Available Gain, MAG (dB)
Forward Insertion Gain, IS21Sl2 (dB)
24
Drain Current, ID (mA)
VDS = 2 V
60
40
20
VDS = 2 V
ID = 10 mA
20
MSG.
MAG.
16
IS21sl 2
12
8
4
0
-2.0
-1.0
Gate to Source Voltage, VGS (V)
0
1
2
4
6
8
10
Frequency, f (GHz)
14
20
30
Associated Gain, GA (dB)
PARAMETERS
Noise Figure, NF (dB)
SYMBOLS
NE325S01
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
1.0
+90°
0.5
18 GHz
+135°
2.0
S21
2 GHz
18 GHz
0
S22
2 GHz
S12
2 GHz
+180°
∞
0
18 GHz
S11
2 GHz
- 0.5
+45°
18 GHz
Coordinates in Ohms
Frequency in GHz
VDS = 2 V, IDS = 10 mA
- 2.0
-135°
-45°
- 1.5
-90°
VDS = 2 V, ID = 10 mA
FREQUENCY
S11
(GHz)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
MAG
0.969
0.957
0.944
0.926
0.906
0.884
0.852
0.819
0.785
0.753
0.723
0.696
0.670
0.643
0.622
0.597
0.571
0.538
0.503
0.475
0.453
0.435
0.422
0.413
0.408
0.405
0.406
0.410
0.418
0.434
0.455
0.484
0.521
S21
ANG
-24.84
-30.87
-36.91
-43.10
-49.43
-55.58
-62.02
-68.28
-74.48
-80.82
-87.00
-93.23
-99.64
-105.78
-112.38
-119.18
-126.73
-134.31
-142.42
-150.84
-160.32
-170.10
179.93
169.88
159.68
149.30
138.94
128.31
117.54
106.98
96.84
87.21
77.71
MAG
4.798
4.756
4.730
4.699
4.663
4.600
4.523
4.449
4.370
4.276
4.200
4.136
4.066
4.011
3.968
3.920
3.857
3.799
3.740
3.621
3.545
3.482
3.423
3.362
3.309
3.250
3.182
3.108
3.031
2.943
2.869
2.799
2.720
S12
ANG
152.65
146.03
139.49
132.75
126.04
119.31
112.42
105.80
99.62
93.42
87.18
81.15
75.30
69.03
63.04
56.93
50.48
44.20
38.29
32.04
25.99
20.11
14.37
8.03
1.70
-4.80
-11.37
-18.01
-24.47
-30.70
-37.11
-43.55
-50.10
MAG
0.026
0.032
0.038
0.044
0.050
0.055
0.060
0.064
0.068
0.072
0.075
0.078
0.081
0.084
0.087
0.090
0.092
0.094
0.096
0.098
0.099
0.101
0.102
0.103
0.104
0.106
0.107
0.108
0.109
0.110
0.111
0.111
0.111
S22
ANG
73.02
68.77
64.98
60.81
56.76
52.64
48.77
44.73
41.16
37.54
34.03
30.60
27.44
24.34
21.18
18.07
14.85
11.58
8.35
5.11
1.78
-1.21
-4.53
-7.66
-11.00
-14.39
-17.92
-21.80
-25.41
-29.36
-33.17
-37.06
-41.23
MAG
0.574
0.566
0.556
0.544
0.531
0.515
0.496
0.475
0.454
0.434
0.414
0.396
0.379
0.363
0.347
0.330
0.308
0.287
0.262
0.237
0.214
0.191
0.173
0.160
0.151
0.145
0.144
0.148
0.154
0.168
0.188
0.214
0.246
ANG
-18.45
-22.99
-27.48
-32.03
-36.56
-41.22
-45.75
-50.42
-55.09
-59.78
-64.50
-69.09
-73.80
-78.31
-82.72
-87.24
-91.89
-96.77
-102.63
-109.34
-116.89
-126.44
-137.47
-149.76
-161.84
-174.45
171.72
157.82
142.64
127.26
114.01
102.68
92.62
K
MAG1
0.237
0.277
0.310
0.358
0.403
0.454
0.524
0.595
0.659
0.716
0.771
0.816
0.854
0.894
0.919
0.950
0.995
1.047
1.100
1.156
1.200
1.227
1.255
1.278
1.294
1.302
1.316
1.330
1.343
1.350
1.344
1.330
1.303
(dB)
22.661
21.721
20.951
20.286
19.697
19.224
18.773
18.421
18.080
17.737
17.482
17.245
17.007
16.790
16.591
16.390
16.225
14.743
13.983
13.284
12.834
12.500
12.220
11.970
11.771
11.572
11.364
11.155
10.940
10.739
10.619
10.577
10.591
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE325S01
NONLINEAR MODEL
SCHEMATIC
CGD_PKG
0.001pF
Ldx
DRAIN
Lgx
GATE
Q1
0.6nH
Rdx
6 ohms
Rgx 0.69nH
6 ohms
CGS_PKG
0.07pF
Lsx
0.07nH
CDS_PKG
0.05PF
Rsx
0.06 ohms
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
UNITS
Parameter
Units
Parameters
Q1
Parameters
Q1
VTO
-0.8
RG
3
time
VTOSC
0
RD
2
capacitance
farads
henries
ohms
seconds
ALPHA
8
RS
2
inductance
BETA
0.103
RGMET
0
resistance
GAMMA
0.092
KF
0
voltage
volts
GAMMADC
0.08
AF
1
current
amps
Q
2
TNOM
27
DELTA
1
XTI
3
VBI
0.715
EG
1.43
IS
3e-13
VTOTC
0
N
1.22
BETATCE
0
RIS
0
FFE
1
RID
0
TAU
4e-12
CDS
0.13e-12
RDB
5000
CBS
1e-9
CGSO
0.3e-12
CGDO
0.02e-12
DELTA1
0.3
DELTA2
0.1
FC
0.5
VBR
Infinity
(1) Series IV Libra TOM Model
MODEL RANGE
Frequency: 0.1 to 18 GHz
Bias:
VDS = 1 V to 3 V, ID = 5 mA to 30 mA
IDSS = 59.9 ma @ VGS = 0, VDS = 2 V
Date:
2/98
NE325S01
TYPICAL NOISE PARAMETERS (TA = 25°C)
OUTLINE DIMENSIONS (Units in mm)
VDS = 2 V, ID = 10 mA
PACKAGE OUTLINE S01
2.0 ± 0.2
2.
±
D
2.0 ± 0.2
0.5 TYP.
2
0.
2
NFMIN
GA
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
2
0.29
20.0
0.93
14
0.38
4
0.30
18.3
0.80
29
0.33
6
0.32
16.5
0.65
48
0.25
8
0.35
15.0
0.49
72
0.18
10
0.40
13.6
0.36
102
0.11
12
0.45
12.5
0.27
139
0.08
14
0.53
12.0
0.24
-176
0.07
16
0.67
11.8
0.30
-122
0.10
18
0.83
11.5
0.47
-58
0.22
ΓOPT
0
1
FREQ.
4
3
1.
2.
3.
4.
1.5 MAX
0.65 TYP.
1.9 ± 0.2
1.6
Source
Drain
Source
Gate
0.125 ± 0.05
TYPICAL CONSTANT NOISE FIGURE
CIRCLE (VDS = 2 V, ID = 10 mA, f = 12 GHz)
1
0.4 MAX
4.0 ± 0.2
0.6
2
5
0.2
*
Γopt
ORDERING INFORMATION
PART
NUMBER
SUPPLY FORM
PACKAGE
OUTLINE
NE325S01
Bulk
S01
NE325S01-T1
Tape & Reel 1000 pcs./reel
S01
NE325S01-T1B
Tape & Reel 4000 pcs./reel
S01
0
0.6
0.2
1.0
∞
2.0
0.8
1.0
-0.2
-5
-2
-0.6
-1
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
04/29/2002
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