WINNERJOIN MMBT9013LT1 Npn epitaxial silicon transistor Datasheet

RoHS
MMBT9013LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
1W OUTPUT AMPLIFIER OF PORTABLE
1
RADIOS IN CLASS
B PUSH-PULL OPERATION
2
1.
Complement to 9012
2.4
1.3
0.95
0.95
2.9
1.9
High Total Power Dissipation Pc=225mW
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage
Collector-Emitter Voltage
V CBO
Emitter-Base Voltage
V EBO
V CEO
R
T
Ic
Collector Current
o
PD
Collector Dissipation Ta=25 C*
Tj
Junction Temperature
C
E
L
Electrical Characteristics
Parameter
IC
N
Symbol
Characteristic
1.BASE
2.EMITTER
3.COLLECTOR
O
T stg
Symbol
C
0.4
Collector Current :Ic=500mA
Storage Temperature
D
T
,. L
O
3
Rating
40
V
20
V
5
V
500
mA
225
mW
150
O
-55~150
O
o
MIN. TYP. MAX. Unit
Condition
V
I C =100 A I E =0
Collector-Emitter Breakdown Voltage#
BV CEO
20
V
I C =1mA I B =0
Emitter-Base Breakdown Voltage
BV EBO
5
V
I E =100 A I C =0
Collector -Base Cutoff Current
I CBO
100
nA
V CB =25V, V C =0
Emitter-Base Cutoff Current
I EBO
100
nA
V CB =3V, I C =0
DC Current Gain
H FE1
64
DC Current Gain
H FE2
30
Collector-Emitter Saturation Voltage
V CE(sat)
J
E
W
Base-Emitter Saturation Voltage
V BE(sat)
Base-Emitter On Voltage
V BE(on)
0.6
C
C
(Ta=25 C)
40
E
o
(Ta=25 C)
Unit
BV CBO
Collector-Base Breakdown Voltage
Unit:mm
120
300
V CE =1V, I C =50mA
V CE =1V, I C =500mA
0.18
0.6
V
I C =500mA, I B =50mA
0.95
1.2
I C =500mA, I B =50mA
0.67
0.7
V
V
V C e =1V, I C =10mA
o
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C
_ 300uS Duty cycle <
_ 2%
# Pulse Test: Pulse Width <
DEVICE MARKING:
9013=K6
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
RoHS
MMBT9013LT1
Typical Characteristics
1000
I B =160 A
16
I B =120 A
14
I B =100 A
12
10
I B =80 A
8
I B =60 A
6
I B =40 A
4
I B =20 A
2
0
0
10
20
30
40
VBE(sat),VCE(sat)[mA],SATURATION VOLTAGE
R
T
I C =10 I B
C
E
L
1000
V BE (sat)
100
V CE (sat)
10
1
E
10
J
E
100
IC
1000
10000
I C (mA),COLLECT CURRENT
Base-Emitter Saturation Voltage
Collector-Emitter Satruation Voltage
O
10
100
1000
10000
I C (mA),COLLECTOR CURRENT
N
Static Characteristic
C
10
1
1
V CE (V),COLLECTOR-EMMITTER VOLTAGE
10000
100
50
D
T
,. L
O
Vc E =1V
I B =140 A
h FE ,DC CURRENT GAIN
18
fT(MHz),CURRENT GAIN-BANDWIDTH PRODUCT
I C (mA),COLLECTOR CURRENT
20
DC Current Gain
1000
Vc E =6V
100
10
1
1
10
100
1000
10000
I C (mA),COLLECTOR CURRENT
Current Gain Bandwidth Product
W
SHEN ZHEN YONG ER JIA ELECTRONIC CO.,LTD.
Tel: 0755-8324 8022 Fax 0755-8324 9522
Http:// www.wej.cn
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