DMN3150LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS(ON) < 88mΩ @ VGS = 4.5V RDS(ON) < 138mΩ @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) • • • • • • Drain SOT-323 D Gate G S Source Pin Configuration TOP VIEW Maximum Ratings EQUIVALENT CIRCUIT @TA = 25°C unless otherwise specified Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Drain Current (Note 1) Body-Diode Continuous Current (Note 1) Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed Value 28 ±12 1.6 1.2 6.4 1.5 ID IDM IS Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol PD RθJA TJ, TSTG Value 350 357 -55 to +150 @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS 28 ⎯ ⎯ ⎯ V nA IGSS ⎯ ⎯ ⎯ 800 ±80 ±800 ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(th) RDS(ON) 1.4 88 138 |Yfs| VSD 0.94 73 115 5.4 ⎯ V Static Drain-Source On-Resistance 0.62 ⎯ ⎯ ⎯ ⎯ ⎯ 1.16 S V Ciss Coss Crss ⎯ ⎯ ⎯ 305 74 48 ⎯ ⎯ ⎯ pF pF pF Gate-Body Leakage Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. Unit mW °C/W °C nA mΩ Test Condition VGS = 0V, ID = 250μA VDS = 28V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±19V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 1.6A VGS = 2.5V, ID = 1.2A VDS = 5V, ID = 2.7A VGS = 0V, IS = 1.5A VDS = 5V, VGS = 0V f = 1.0MHz Device mounted on 1in2 FR-4 PCB on 2oz. Copper. t ≤ 10 sec. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN3150LW Document number: DS31514 Rev. 1 - 2 1 of 4 www.diodes.com August 2008 © Diodes Incorporated DMN3150LW 8 8 NEW PRODUCT VDS = 5V Pulsed 6 6 4 4 2 2 0 0 0.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3 0.16 0.12 C, CAPACITANCE (pF) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) f = 1 MHz TA = 25°C VGS = 2.5V 0.08 VGS = 4.5V VGS = 10V Ciss Coss 0.04 Crss 0 0 2 4 6 ID, DRAIN CURRENT (A) Fig. 3 On-Resistance vs. Drain Current and Gate Voltage 8 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Total Capacitance 1.4 1.0 0.8 0.6 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.2 1.6 0.4 1.4 VGS = 4.5V ID = 1.6A 1.2 1.0 0.8 0.6 -50 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature DMN3150LW Document number: DS31514 Rev. 1 - 2 2 of 4 www.diodes.com -25 August 2008 © Diodes Incorporated DMN3150LW 8 NEW PRODUCT 6 4 2 0 0.5 0.6 0.7 0.8 Ordering Information 0.9 1.0 1.1 1.2 (Note 5) Part Number DMN3150LW-7 Notes: Case SOT-323 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code Month Code 2008 V 2009 W Jan 1 Feb 2 31N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) YM 31N 2010 X Mar 3 2011 Y Apr 4 May 5 Jun 6 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C TOP VIEW G H K J DMN3150LW Document number: DS31514 Rev. 1 - 2 M D F L 3 of 4 www.diodes.com SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 F 0.30 0.40 0.425 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm August 2008 © Diodes Incorporated DMN3150LW Suggested Pad Layout Y NEW PRODUCT Z C X Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN3150LW Document number: DS31514 Rev. 1 - 2 4 of 4 www.diodes.com August 2008 © Diodes Incorporated