CZT3120 SURFACE MOUNT NPN SILICON SWITCHING POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT3120 NPN Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a SOT-223 Surface Mount Package. Typical applications include drivers, DC-DC converters, and general fast switching applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL UNITS VCBO VCEO 120 V 70 V VEBO IC 7.0 V 3.0 A PD TJ, Tstg 2.0 W Thermal Resistance ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS MIN -65 to +150 °C 62.5 °C/W MAX UNITS ICBO VCB=80V TYP 1.0 µA IEBO 1.0 µA BVCBO VEB=5.0V IC=50µA BVCEO BVEBO VCE(SAT) VBE(ON) IC=2.0A, IB=200mA IC=2.0A, VCE=1.0V hFE VCE=5.0V, IC=10mA 100 170 hFE 100 165 hFE VCE=5.0V, VCE=5.0V, 40 75 fT VCE=10V, IC=500mA, f=1.0MHz 120 160 V IC=10mA 70 90 V IE=50µA 7.0 15 IC=500mA IC=3.0A 8.0 V 250 500 mV 0.95 1.1 V 300 MHz R3 (1-March 2010) CZT3120 SURFACE MOUNT NPN SILICON SWITCHING POWER TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R3 (1-March 2010) w w w. c e n t r a l s e m i . c o m