NXP BLS6G2933S-130 Ldmos s-band radar power transistor Datasheet

BLS6G2933S-130
LDMOS S-band radar power transistor
Rev. 03 — 3 March 2010
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz
range.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
VDS
PL
Gp
ηD
tr
tf
(GHz)
(V)
(W)
(dB)
(%)
(ns)
(ns)
2.9 to 3.3
32
130
12.5
47
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %:
‹ Output power = 130 W
‹ Power gain = 12.5 dB
‹ Efficiency = 47 %
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (2.9 GHz to 3.3 GHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLS6G2933S-130
NXP Semiconductors
LDMOS S-band radar power transistor
1.3 Applications
„ S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency
range
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
Simplified outline
Graphic symbol
1
1
3
[1]
source
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
BLS6G2933S-130 -
Description
Version
ceramic earless flanged cavity package; 2 leads
SOT922-1
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
VDS
drain-source voltage
-
60
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
33
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Zth(j-mb)
transient thermal impedance from junction Tcase = 85 °C; PL = 130 W
to mounting base
t = 100 μs; δ = 10 %
0.23 K/W
tp = 200 μs; δ = 10 %
0.28 K/W
tp = 300 μs; δ = 10 %
0.32 K/W
tp = 100 μs; δ = 20 %
0.33 K/W
p
BLS6G2933S-130_3
Product data sheet
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Rev. 03 — 3 March 2010
Unit
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LDMOS S-band radar power transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.6 mA
60
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 180 mA
1.4
1.8
2.4
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
4.2
μA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
27
33
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
450
nA
gfs
forward transconductance
VDS = 10 V; ID = 9 A
8.1
13
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 6.3 A
-
0.085
0.135 Ω
7. Application information
Table 7.
Application information
Mode of operation: pulsed RF; tp = 300 μs; δ = 10 %; RF performance at VDS = 32 V; IDq = 100 mA;
Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit.
BLS6G2933S-130_3
Product data sheet
Symbol
Parameter
Conditions
Min Typ
Max Unit
PL
output power
VCC
supply voltage
PL = 130 W
-
130
-
W
-
-
32
V
Gp
power gain
PL = 130 W
10
12.5 -
dB
RLin
input return loss
PL = 130 W
7.5
10
-
dB
PL(1dB)
output power at 1 dB gain compression
ηD
drain efficiency
PL = 130 W
-
140
-
W
40
47
-
%
Pdroop(pulse)
pulse droop power
PL = 130 W
-
0
0.5
dB
tr
rise time
PL = 130 W
-
20
50
ns
tf
fall time
PL = 130 W
-
6
50
ns
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Rev. 03 — 3 March 2010
© NXP B.V. 2010. All rights reserved.
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BLS6G2933S-130
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LDMOS S-band radar power transistor
Table 8.
Typical impedance
f
ZS
ZL
GHz
Ω
Ω
2.9
2.2 − j7.6
4.5 − j5.6
3.0
2.5 − j6.6
4.3 − j5.7
3.1
3.2 − j5.6
4.0 − j5.8
3.2
4.5 − j4.8
3.6 − j5.8
3.3
6.8 − j5.3
3.2 − j5.8
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS6G2933S-130 is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V;
IDq = 100 mA; PL = 130 W; tp = 300 μs; δ = 10 %.
BLS6G2933S-130_3
Product data sheet
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Rev. 03 — 3 March 2010
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LDMOS S-band radar power transistor
7.2 Graphs
001aaj266
14
Gp
(dB)
001aaj267
14
Gp
(dB)
(2)
(3)
(1)
(2)
(3)
(1)
10
10
6
6
2
2
0
60
120
180
0
60
120
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 300 μs; δ = 10 %.
VDS = 32 V; IDq = 100 mA; tp = 100 μs; δ = 20 %.
(1) f = 2.9 GHz
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
(3) f = 3.3 GHz
Fig 2.
Power gain as a function of load power; typical
values
Fig 3.
001aaj268
60
ηD
(%)
Power gain as a function of load power; typical
values
001aaj269
60
ηD
(%)
(1)
(2)
(1)
(2)
(3)
40
40
20
(3)
20
0
0
0
60
120
180
0
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 300 μs; δ = 10 %.
(2) f = 3.1 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
(3) f = 3.3 GHz
Drain efficiency as a function of load power;
typical values
Product data sheet
120
180
VDS = 32 V; IDq = 100 mA; tp = 100 μs; δ = 20 %.
(1) f = 2.9 GHz
BLS6G2933S-130_3
60
PL (W)
(1) f = 2.9 GHz
Fig 4.
180
PL (W)
Fig 5.
Drain efficiency as a function of load power;
typical values
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LDMOS S-band radar power transistor
001aaj270
180
001aaj271
180
PL
(W)
PL
(W)
(2)
(3)
(1)
120
(2)
(3)
(1)
120
60
60
0
0
0
6
12
18
0
6
12
Pi (W)
VDS = 32 V; IDq = 100 mA; tp = 300 μs; δ = 10 %.
VDS = 32 V; IDq = 100 mA; tp = 100 μs; δ = 20 %.
(1) f = 2.9 GHz
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
(3) f = 3.3 GHz
Fig 6.
Load power as a function of input power;
typical values
001aaj272
14
Gp
(dB)
Gp
Fig 7.
60
ηD
(%)
Load power as a function of input power;
typical values
001aaj273
14
Gp
(dB)
50
12
Gp
60
ηD
(%)
50
12
ηD
ηD
10
40
10
40
8
30
8
30
6
20
6
20
4
2850
2950
3050
3150
10
3250
3350
f (MHz)
4
2850
PL = 130 W; VDS = 32 V; IDq = 100 mA; tp = 300 μs;
δ = 10 %.
Fig 8.
18
Pi (W)
Power gain and drain efficiency as function of
frequency; typical values
BLS6G2933S-130_3
Product data sheet
2950
3050
3150
10
3250
3350
f (MHz)
PL = 130 W; VDS = 32 V; IDq = 100 mA; tp = 100 μs;
δ = 20 %.
Fig 9.
Power gain and drain efficiency as function of
frequency; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 3 March 2010
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LDMOS S-band radar power transistor
8. Test information
C3
R1
C5
C6
C7
C8
C4
C1
C2
001aaj275
Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.15 and thickness = 0.64 mm.
See Table 9 for list of components.
Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit
Table 9.
List of components
See Figure 10.
Component
Description
Value
Quantity
Remarks
C1, C2, C5, C7
multilayer ceramic chip capacitor
33 pF
1
ATC 100A or equivalent
C3
multilayer ceramic chip capacitor
1 μF
1
ATC 900A or equivalent
C4
multilayer ceramic chip capacitor
47 μF; 63 V
1
C6
multilayer ceramic chip capacitor
1 nF
2
C8
electrolytic capacitor
68 μF; 63 V
1
R1
SMD resistor
47 Ω
1
BLS6G2933S-130_3
Product data sheet
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Rev. 03 — 3 March 2010
ATC 700A or equivalent
SMD 0603
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LDMOS S-band radar power transistor
9. Package outline
Ceramic earless flanged cavity package; 2 leads
SOT922-1
D
F
A
3
D1
D
U1
c
1
L
H U2
E1
E
2
b
w2
0
5
D
M
Q
M
10 mm
scale
DIMENSIONS (mm are the original dimensions)
E
E1
F
H
L
Q
U1
U2
w2
9.53
9.27
9.27
9.02
1.32
0.81
15.62
14.34
3.05
2.03
1.70
1.45
17.75
17.50
9.53
9.27
0.25
0.692 0.689 0.375 0.365 0.052 0.615
0.678 0.679 0.365 0.355 0.032 0.525
0.12
0.08
0.067 0.699 0.375
0.010
0.057 0.689 0.365
UNIT
A
b
c
mm
4.22
3.53
12.42
12.17
0.15
0.10
17.58 17.50
17.22 17.25
0.166 0.489
0.139 0.479
0.006
0.004
inches
OUTLINE
VERSION
D
D1
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-11-14
05-11-22
SOT922-1
Fig 11. Package outline SOT922-1
BLS6G2933S-130_3
Product data sheet
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Rev. 03 — 3 March 2010
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LDMOS S-band radar power transistor
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
S-band
Short wave Band
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLS6G2933S-130_3
20100303
Product data sheet
-
BLS6G2933S-130_2
Modifications:
The status of the data sheet was changed to “Product data sheet”.
BLS6G2933S-130_2
20090618
Preliminary data sheet
-
BLS6G2933S-130_1
BLS6G2933S-130_1
20081211
Objective data sheet
-
-
BLS6G2933S-130_3
Product data sheet
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12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
BLS6G2933S-130_3
Product data sheet
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
All information provided in this document is subject to legal disclaimers.
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In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
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14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 March 2010
Document identifier: BLS6G2933S-130_3
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