DSS4140U LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Low Collector-Emitter Saturation Voltage, VCE(SAT) Complementary PNP Type Available (DSS5140U) Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green Device" (Note 2) • • • • • • Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Copper Plated Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) C B Top View E Device Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IBM Value 40 40 5 1 2 1 Unit V V V A A A Symbol PD RθJA TJ, TSTG Value 400 313 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. DSS4140U Document number: DS31689 Rev. 2 - 2 1 of 5 www.diodes.com March 2009 © Diodes Incorporated DSS4140U Electrical Characteristics @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO 40 40 5 ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ ⎯ Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 5) ICES IEBO ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 50 100 100 V V V nA μA nA nA DC Current Gain hFE 300 300 200 ⎯ ⎯ ⎯ ⎯ 900 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 200 250 500 mV 500 1.2 1.1 mΩ V V VCE = 5V, IC = 1mA VCE = 5V, IC = 500mA VCE = 5V, IC = 1A IC = 100mA, IB = 1mA IC = 500mA, IB = 50mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA VCE = 5V, IC = 1A VCB = 10V, f = 1.0MHz VCE = 10V, IC = 50mA, f = 100MHz Collector-Emitter Saturation Voltage VCE(SAT) Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time RCE(SAT) VBE(SAT) VBE(ON) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Cobo fT ⎯ 150 9 ⎯ ⎯ ⎯ pF MHz ton td tr toff ts tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 60 30 30 380 350 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ns ns ns ns ns Test Condition IC = 100μA, IE = 0 IC = 10mA, IB = 0 IE = 100μA, IC = 0 VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = 150°C VCE = 40V, VBE = 0 VEB = 5V, IC = 0 VCC = 10V IC = 0.5A, IB1 = IB2 = 25mA 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. Notes: 500 10 Pw = 1ms 400 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) NEW PRODUCT Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage 300 200 100 RθJA = 313°C/W 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) DSS4140U Document number: DS31689 Rev. 2 - 2 150 Pw = 10ms 1 0.1 Pw = 100ms DC 0.01 0.001 0.1 2 of 5 www.diodes.com 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 3) March 2009 © Diodes Incorporated DSS4140U 1,600 1 IC/IB = 10 VCE = 5V VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1,400 hFE, DC CURRENT GAIN 1,200 T A = 150°C 800 TA = 85°C 600 TA = 25°C 400 TA = -55°C 0.1 T A = 150°C TA = 85°C TA = 25°C 0.01 TA = -55°C 200 0 0.001 0.1 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 VCE = 5V 1.0 0.8 T A = -55°C 0.6 T A = 25°C 0.4 T A = 85°C 0.2 T A = 150°C 0 0.1 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 1.2 IC/IB = 10 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C 0.2 0 0.1 TA = 150°C 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 180 150 CAPACITANCE (pF) NEW PRODUCT 1,000 f = 1MHz 120 90 Cibo 60 30 Cobo 0 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics DSS4140U Document number: DS31689 Rev. 2 - 2 3 of 5 www.diodes.com March 2009 © Diodes Incorporated DSS4140U NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 240°C/W D = 0.9 D = 0.02 0.01 P(pk) t1 D = 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 /t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) 100 1,000 10,000 Fig. 8 Transient Thermal Response (Note 3) Ordering Information (Note 5) Part Number DSS4140U-7 Notes: Case SOT-323 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code Month Code 2008 V 2009 W Jan 1 Feb 2 YM ZN6 ZN6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2010 X Mar 3 Apr 4 2011 Y May 5 Jun 6 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C G H K J DSS4140U Document number: DS31689 Rev. 2 - 2 M D L 4 of 5 www.diodes.com SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm March 2009 © Diodes Incorporated DSS4140U Suggested Pad Layout Y NEW PRODUCT Z C X Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DSS4140U Document number: DS31689 Rev. 2 - 2 5 of 5 www.diodes.com March 2009 © Diodes Incorporated