IXYS GMM3X120-0075X2 Three phase full bridge with trench mosfets in dcb isolated high current package Datasheet

GMM 3x120-0075X2
Three phase full Bridge
VDSS
= 75 V
= 110 A
ID25
RDSon typ. = 4.0 mW
with Trench MOSFETs
in DCB isolated high current package
L1+
L2+
G1
G3
G5
S1
S3
S5
L1
L2
G4
G6
G2
S2
L3+
L3
S4
S6
L1-
L2-
L3-
Applications
Symbol
Conditions
Maximum Ratings
VDSS
TVJ = 25°C to 150°C
ID25
ID90
TC = 25°C
TC = 90°C
IF25
IF90
TC = 25°C (diode)
TC = 90°C (diode)
Symbol
Conditions
75
V
± 20
V
110
85
A
A
110
80
A
A
iv
VGS
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
on chip level at
VGS = 10 V
TVJ = 25°C
TVJ = 125°C
VGS(th)
VDS = 20 V; ID = 1 mA
IDSS
VDS = VDSS; VGS = 0 V
IGSS
VGS = ± 20 V; VDS = 0 V
Qg
Qgs
Qgd
VGS = 10 V; VDS = 36 V; ID = 25 A
RthJC
RthJH
1)
4.0
7.2
4.9
8.4
a
t
mW
mW
4.0
V
1
µA
µA
0.2
µA
50
115
30
30
nC
nC
nC
130
100
500
100
ns
ns
ns
ns
0.20
0.50
0.01
mJ
mJ
mJ
n
inductive load
VGS = 10 V; VDS = 30 V
ID = 80 A; RG = 39 Ω;
TJ = 125°C
e
Eon
Eoff
Erecoff
max.
2.0
TVJ = 25°C
TVJ = 125°C
with heat transfer paste (IXYS test setup)
t
td(on)
tr
td(off)
tf
typ.
t
min.
RDSon 1)
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
e
MOSFETs
1.3
1.0
1.6
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
K/W
K/W
VDS = ID·(RDS(on) + 2RPin to Chip)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307
1-4
GMM 3x120-0075X2
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VSD
(diode) IF = 80 A; VGS = 0 V
0.9
trr
QRM
IRM
IF = 80 A; -diF/dt = 800 A/µs; VR = 30 V
55
0.9
30
1.2
V
ns
µC
A
Component
Conditions
Maximum Ratings
IRMS
per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
2 pins for output L1, L2, L3
TJ
Tstg
VISOL
IISOL < 1 mA, 50/60 Hz, f = 1 minute
FC
mounting force with clip
Symbol
Conditions
min.
-55...+175
-55...+125
°C
°C
1000
V~
50 - 250
N
typ.
max.
tbd
mW
160
pF
25
g
iv
coupling capacity between shorted
pins and back side metallization
Weight
VDS = ID·(RDS(on) + 2RPin to Chip)
t
e
n
t
a
t
1)
A
Characteristic Values
Rpin to chip 1)
CP
75
e
Symbol
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307
2-4
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GMM 3x120-0075X2
Leads
SMD
Ordering
Standard
Part Name &
Packing Unit Marking
Part Marking
GMM 3x120-0075X2 - SMD GMM 3x120-0075X2
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Delivering Mode
Base Qty.
Ordering
Code
Blister
28
507 508
20110307
3-4
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iv
e
GMM 3x120-0075X2
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307
4-4
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