MMDT4146 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Complementary Pair One 4124-Type NPN One 4126-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) • • • • • • Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) C2 B1 E1 E1, B1, C1 = PNP4126 Section E2, B2, C2 = NPN4124 Section E2 Top View Maximum Ratings, NPN 4124 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous C1 @TA = 25°C unless otherwise specified (Note 1) Maximum Ratings, PNP 4126 Section B2 Device Schematic Symbol VCBO VCEO VEBO IC Value 30 25 5.0 200 Unit V V V mA Symbol VCBO VCEO VEBO IC Value -25 -25 -4 -200 Unit V V V mA Symbol PD RθJA Value 200 625 Unit mW °C/W @TA = 25°C unless otherwise specified (Note 1) Thermal Characteristics – Total Device Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Notes: 1. 2. 3. 4. 5. (Note 1, 2) (Note 1) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Maximum combined dissipation. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. MMDT4146 Document number: DS30162 Rev. 11 - 2 1 of 5 www.diodes.com January 2009 © Diodes Incorporated MMDT4146 Electrical Characteristics, NPN 4124 Section Characteristic OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 6) @TA = 25°C unless otherwise specified Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 30 25 5.0 ⎯ ⎯ ⎯ ⎯ ⎯ 50 50 V V V nA nA IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCB = 20V, IE = 0V VEB = 3.0V, IC = 0V 360 ⎯ 0.30 0.95 ⎯ VCE(SAT) VBE(SAT) 120 60 ⎯ ⎯ IC = 2.0mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 50mA, IB = 5.0mA IC = 50mA, IB = 5.0mA Cobo Cibo ⎯ ⎯ 4.0 8.0 pF pF Small Signal Current Gain hfe 120 480 ⎯ Current Gain-Bandwidth Product fT 300 ⎯ MHz NF ⎯ 5.0 dB DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Noise Figure Electrical Characteristics, PNP 4126 Section Characteristic OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 6) V V Test Condition VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 1.0V, IC = 2.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz @TA = 25°C unless otherwise specified Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO -25 -25 -4.0 ⎯ ⎯ ⎯ ⎯ ⎯ -50 -50 V V V nA nA IC = -10μA, IE = 0 IC = -1.0mA, IB = 0 IE = -10μA, IC = 0 VCB = -20V, IE = 0V VEB = -3.0V, IC = 0V 360 ⎯ -0.40 -0.95 ⎯ VCE(SAT) VBE(SAT) 120 60 ⎯ ⎯ IC = -2.0mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -50mA, IB = -5.0mA IC = -50mA, IB = -5.0mA Cobo Cibo ⎯ ⎯ 4.5 10 pF pF Small Signal Current Gain hfe 120 480 ⎯ Current Gain-Bandwidth Product fT 250 ⎯ MHz NF ⎯ 4.0 dB DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Noise Figure Notes: V V Test Condition VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = -1.0V, IC = -2.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -100μA, RS = 1.0kΩ, f = 1.0kHz 6. Short duration pulse test used to minimize self-heating effect. MMDT4146 Document number: DS30162 Rev. 11 - 2 2 of 5 www.diodes.com January 2009 © Diodes Incorporated MMDT4146 1,000 hFE, DC CURRENT GAIN 300 250 200 150 100 1 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Total Device, Note 1) 0 25 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 10 RθJA = 625°C/W 50 1 0.1 0.01 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current (PNP-4126) 100 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current (PNP-4126) 1,000 1.0 0.9 0.8 0.7 0.6 IC IB= 10 0.5 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Base-Emitter Saturation Voltage vs. Collector Current (PNP-4126) 1,000 hFE, DC CURRENT GAIN CAPACITANCE (pF) 100 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 350 10 1 1 100 10 VR, REVERSE VOLTAGE (V) Fig. 5 Typical Capacitance Characteristics (PNP-4126) 0.1 MMDT4146 Document number: DS30162 Rev. 11 - 2 3 of 5 www.diodes.com 100 10 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical DC Current Gain vs. Collector Current (NPN-4124) 1,000 January 2009 © Diodes Incorporated VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) MMDT4146 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1 0.1 0.01 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current (NPN-4124) 10 1 0.1 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current (NPN-4124) CAPACITANCE (pF) 15 10 5 0 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 9 Typical Capacitance Characteristics (NPN-4124) Ordering Information (Note 7) Part Number MMDT4146-7-F Notes: Case SOT-363 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information K12 Date Code Key Year 1998 Code J Month Code Jan 1 1999 K 2000 L Feb 2 MMDT4146 Document number: DS30162 Rev. 11 - 2 2001 M Mar 3 2002 N 2003 P Apr 4 2004 R May 5 2005 S K12 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2006 T 2007 2008 U V Jun 6 4 of 5 www.diodes.com Jul 7 2009 W Aug 8 2010 X Sep 9 2011 Y 2012 Z Oct O 2013 A Nov N 2014 B 2015 C Dec D January 2009 © Diodes Incorporated MMDT4146 Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. MMDT4146 Document number: DS30162 Rev. 11 - 2 5 of 5 www.diodes.com January 2009 © Diodes Incorporated