Power LQA30T300 300 v, 30 a q-series diode Datasheet

LQA30T300
Qspeed™ Family
300 V, 30 A Q-Series Diode
Product Summary
IF(AVG)
VRRM
QRR (Typ at 125 °C)
IRRM (Typ at 125 °C)
Softness tb/ta (Typ at 125 °C)
30
300
53
2.85
0.6
General Description
A
V
nC
A
This device has the lowest QRR of any 300V
Silicon diode.
Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
• AC/DC and DC/DC output rectification
• Output & freewheeling diodes
• Motor control drive circuits
• Uninterruptible Power Supply (UPS) inverters
Pin Assignment
Features
• Low QRR, Low IRRM, Low tRR
• High dIF/dt capable (1000A/µs)
• Soft recovery
A
Benefits
C
• Increases efficiency
• Eliminates need for snubber circuits
• Reduces EMI filter component size & count
• Enables extremely fast switching
TO-220AC
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Symbol
Parameter
VRRM
IF(AVG)
IFSM
IFSM
TJ
TSTG
Peak repetitive reverse voltage
Average forward current
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Power dissipation
PD
Conditions
TJ = 150 °C, TC = 99 °C
60 Hz, ½ cycle
½ cycle of T = 28 us Sinusoid, TC = 25 °C
Leads at 1.6mm from case, 10 sec
TC = 25 °C
Rating
Units
300
30
200
350
150
–55 to 150
300
113
V
A
A
A
°C
°C
°C
W
Rating
Units
62
1.1
°C/W
°C/W
Thermal Resistance
Symbol
Resistance from:
Conditions
RθJA
RθJC
Junction to ambient
Junction to case
TO-220
TO-220
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January 2011
LQA30T300
Electrical Specifications at TJ= 25 °C (unless otherwise specified)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
-
1.0
1.66
1.45
89
250
1.95
-
µA
mA
V
V
pF
DC Characteristics
IR
Reverse current
VF
Forward voltage
CJ
Junction capacitance
VR = 300 V, TJ = 25 °C
VR = 300 V, TJ = 125 °C
IF = 30 A, TJ = 25 °C
IF = 30 A, TJ = 150 °C
VR = 10 V, 1 MHz
Dynamic Characteristics
tRR
Reverse recovery time,
dIF/dt = 200A/µs
VR=200V, IF=30 A
QRR
Reverse recovery charge,
dIF/dt = 200A/µs
VR=200V, IF=30 A
IRRM
Maximum reverse
recovery current,
dIF/dt =200A/µs
VR=200V, IF=30 A
S
t
Softness = b
dIF/dt =200A/µs
VR=200V, IF=30 A
ta
TJ=25 °C
-
13.7
-
ns
TJ=125 °C
TJ=25 °C
TJ =125 °C
TJ =25 °C
TJ=125 °C
TJ =25 °C
TJ=125 °C
-
28.5
13
53
1.5
2.85
0.6
0.6
19
2.2
-
ns
nC
nC
A
A
Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction.
Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups.
(For further details, see application note AN-300.)
VR
D1
DUT
L1
tRR
IF
dIF/dt
ta
15V
Pulse generator
tb
+
Rg
Q1
0
0.1xIRRM
IRRM
Figure 1. Reverse Recovery Definitions
Figure 2. Reverse Recovery Test Circuit
2
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LQA30T300
60
55
50
45
40
35
30
25
20
15
10
5
0
1.0
0.9
Tj=125C
0.8
0.7
Tj=125C
0.6
IF (A)
IF (A)
Electrical Specifications at TJ= 25 °C (unless otherwise specified)
0.5
Tj=25C
0.4
Tj=25C
0.3
0.2
0.1
0.0
0.0
0.5
1.0
1.5
2.0
0.0
0.1
0.2
0.3
0.4
VF (V)
Figure 3. Typical IF vs VF
0.6
0.7
0.8
0.9
1.0
Figure 4. Typical IF vs VF
350
60
300
50
250
40
IF(AV) (A)
Cj (pF)
0.5
VF (V)
200
150
30
20
100
10
50
0
0
0
20
40
60
80
100
120
140
160
25
180
50
75
100
125
150
o
VR (V)
Case Temperature, TC ( C)
Figure 5. Typical Cj vs VR
Figure 6. DC Current Derating Curve
35
120
dIF /dt=500A/us
100
30
dIF /dt=200A/us
60
dIF /dt=200A/us
40
tRR (ns)
QRR (nC)
80
25
20
dIF /dt=500A/us
15
20
10
0
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30 32
I F (A)
Figure 7. Typical QRR vs IF at Tj=125 °C
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30 32
I F (A)
Figure 8. Typical tRR vs IF at Tj=125 °C
3
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LQA30T300
120
100
IF(PEAK) (A)
P (W)
80
60
40
20
0
25
50
75
100
125
150
duty cycle=10%
60
55
50
45
40
35
30
25
20
15
10
5
0
duty cycle=30%
duty cycle=50%
DC
25
o
Case Temperature, TC ( C)
50
75
100
T C(°C)
125
150
Figure 10. IF(Peak) vs TC, f=70 kHz
Figure 9. Power Derating Curve
LQA30T300
1
D= 0.5
D = 0.3
D= 0.1
0.1
Zth(j-c)/Rth(j-c)
D= 0.05
D= 0.02
D= 0.01
0.01
D=0.005
D=0.002
Single Pulse
0.001
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
t1(sec)
Figure 11. Normalized Maximum Transient Thermal Impedance
4
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Rev 1.2 01/11
LQA30T300
Dimensional Outline Drawings
Millimeters
Dim
MIN
MAX
A
4.32
4.70
A1
1.14
1.40
A2
2.03
2.79
C
0.34
0.610
D
9.65
10.67
E
2.49
2.59
E1
4.98
5.18
F
0.508
1.016
F1
1.14
1.78
H
14.71
16.51
H1
5.84
6.55
H2
8.51
9.25
H3
3.53
3.96
H4
2.54
3.05
L
12.70
14.22
L1
-
6.35
Mechanical Mounting
Method
Maximum Torque / Pressure specification
Screw through hole in package tab
Clamp against package body
1 Newton Meter (nm) or 8.8 inch-pounds (lb-in)
12.3 kilogram-force per square centimeter (kgf/cm2) or 175 lbf/in2
Soldering time and temperature: This product has been designed for use with hightemperature, lead-free solder. The component leads can be subjected to a maximum
temperature of 300 °C, for up to 10 seconds. See Application Note AN-303, for more
details.
Ordering Information
Part Number
Package
Packing
LQA30T300
TO-220AC
50 units/tube
The information contained in this document is subject to change without notice.
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Rev 1.2 01/11
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LQA30T300
Revision
1.1
1.2
Notes
Released by Qspeed
Converted to Power Integrations Document
Date
05/09
01/11
6
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Rev 1.2 01/11
LQA30T300
For the latest updates, visit our website: www.powerint.com
Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability.
Power Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER
INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING,
WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS.
PATENT INFORMATION
The products and applications illustrated herein (including transformer construction and circuits external to the products)
may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications
assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at www.powerint.com. Power
Integrations grants its customers a license under certain patent rights as set forth at http://www.powerint.com/ip.htm.
The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero, HiperPFS, HiperTFS,
Qspeed, EcoSmart, Clampless, E-Shield, Filterfuse, StackFET, PI Expert and PI FACTS are trademarks of Power Integrations, Inc.
Other trademarks are property of their respective companies. ©Copyright 2011 Power Integrations, Inc.
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