Micron MT46H8M16LF Mobile double data rate (ddr) sdram Datasheet

Advance‡
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Mobile Double Data Rate (DDR) SDRAM
MT46H8M16LF – 2 Meg x 16 x 4 Banks
For a complete data sheet, please refer to www.micron.com/mobileds.
Features
Figure 1: 60-Ball VFBGA Assignment
(Top View)
• VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• Four internal banks for concurrent operation
• Data masks (DM) for masking write data–one mask
per byte
• Programmable burst lengths: 2, 4, or 8
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS compatible inputs
• On-chip temperature sensor to control refresh rate
• Partial array self refresh (PASR)
• Selectable output drive (DS)
• Clock stop capability
Options
• VDD/VDDQ
• 1.8V/1.8V
• Configuration
• 8 Meg x 16 (2 Meg x 16 x 4 banks)
• Plastic Package
• 60-Ball VFBGA (Lead-Free)
8mm x 10mm
• Timing – Cycle Time
• 7.5ns @ CL = 3
• 10ns @ CL = 3
• Operating Temperature Range
• Commercial (0° to +70°C)
• Industrial (-40°C to +85°C)
1
2
3
VSS
DQ15
VDDQ
7
8
9
5
6
VSSQ
VDDQ
DQ0
VDD
DQ13
DQ14
DQ1
DQ2
VSSQ
VSSQ
DQ11
DQ12
DQ3
DQ4
VDDQ
VDDQ
DQ9
DQ10
DQ5
DQ6
VSSQ
VSSQ
UDQS
DQ8
DQ7
LDQS
VDDQ
VSS
UDM
NC
NC
LDM
VDD
CKE
CK
CK#
WE#
CAS#
RAS#
A9
A11
A12/NC
CS#
BA0
BA1
A6
A7
A8
A10/AP
A0
A1
VSS
A4
A5
A2
A3
VDD
A
B
C
D
E
F
G
H
J
K
Marking
H
Table 1:
8M16
Configuration Addressing
Architecture
CF
8 Meg x 16
2 Meg x 16 x 4
4K
4K (A0–A11)
4 (BA0, BA1)
1K (A0–A9)
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
-6
-10
None
IT
Table 2:
Speed
Grade
-75
-10
-75
-10
PDF: 09005aef818ff781/Source: 09005aef818ff799
MT46H8M16.fm - Rev. A 03/05 EN
4
1
Key Timing Parameters
Clock Rate
CL = 3
CL = 2
Data-Out
Window
Access
Time
DQS-DQ
Skew
133 MHz
104 MHz
-
83 MHz
67 MHz
2ns
2.8ns
4ns
5ns
6.0s
7.0ns
6.5ns
7.0ns
+0.6ns
+0.7ns
+0.6ns
+0.7ns
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron
to meet Micron’s production data sheet specifications.
Advance
128Mb: 8 Meg x 16 Mobile DDR SDRAM
®
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
[email protected] www.micron.com Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
Advance: This data sheet contains initial descriptions of products still under development.
PDF: 09005aef818ff781/Source: 09005aef818ff799
MT46H8M16.fm - Rev. A 03/05 EN
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
Advance
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Revision History
• Original Document, Advance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 03/05
PDF: 09005aef818ff781/Source: 09005aef818ff799
MT46H8M16.fm - Rev. A 03/05 EN
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
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