IXYS IXFV26N60PS N-channel enhancement mode fast recovery diode avalanche rated Datasheet

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AdvanceTechnical
TechnicalInformation
Information
PolarHVTM
Power MOSFET
IXFH 26N60P
IXFQ 26N60P
IXFT 26N60P
IXFV 26N60P
IXFV 26N60PS
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
VDSS
ID25
=
=
RDS(on) ≤
≤
trr
TO-247 (IXFH)
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
600
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
600
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
26
A
IDM
TC = 25°C, pulse width limited by TJM
65
A
IAR
TC = 25°C
26
A
EAR
TC = 25°C
40
mJ
EAS
TC = 25°C
1.2
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
10
V/ns
Maximum Ratings
460
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJ ≤ 150°C, RG = 5 Ω
PD
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Plastic body
Md
Mounting torque (TO-3P&TO-247)
FC
Mounting force (PLUS220)
Weight
TO-3P
TO-248
TO-268
PLUS220 & PLUS220SMD
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±30 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
°C
°C
300
250
D
S
TO-3P (IXFQ)
G
D
S
D (TAB)
TO-268 (IXFT)
G
S
D (TAB)
11..65/2.5..15
N/lb
5.5
6.0
5.0
4.0
g
g
g
g
600
2.5
TJ = 125°C
G
D
D (TAB)
S
PLUS220SMD (IXFV_S)
1.13/10 Nm/lb.in.
Characteristic Values
Min. Typ.
Max.
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2005 IXYS All rights reserved
G
PLUS220 (IXFV)
TC = 25°C
VDSS
600
V
26
A
Ω
270 mΩ
200 ns
V
5.0
V
±100
nA
25
250
µA
µA
270
mΩ
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
z
Fast Recovery diode
z
Unclamped Inductive Switching (UIS)
rated
z
International standard packages
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
DS99435(08/05)
IXFH 26N60P IXFQ 26N60P
IXFV 26N60PS IXFT 26N60P
IXFV 26N60P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 20 V; ID = 0.5 ID25, pulse test
16
26
S
4150
pF
400
pF
Crss
27
pF
td(on)
25
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 ID25
27
ns
td(off)
RG = 5 Ω (External)
75
ns
tf
21
ns
Qg(on)
72
nC
27
nC
24
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
0.27
RthCK
TO-3P, PLUS220 & TO-247
Source-Drain Diode
0.21
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
26
A
ISM
Repetitive
78
A
VSD
IF = IS, VGS = 0 V, pulse test
1.5
V
trr
IF = 25A, -di/dt = 100 A/µs
250
ns
IRM
VR = 100V; VGS = 0 V
150
QRM
7
A
0.7
µC
Characteristic Curves
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25ºC
60
VGS = 10V
24
VGS = 10V
54
7V
7V
48
20
I D - Amperes
I D - Amperes
42
16
6V
12
8
6V
36
30
24
18
12
4
5V
6
5V
0
0
0
1
2
3
4
5
6
0
7
3
6
V D S - Volts
9
12
15
18
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
21
24
27
30
IXFH 26N60P IXFQ 26N60P
IXFV 26N60PS IXFT 26N60P
IXFV 26N60P
Fig. 3. Output Characte ris tics
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem pe rature
@ 125º C
3.2
24
VGS = 10V
R D S ( o n ) - Normalized
I D - Amperes
20
16
6V
12
8
5V
4
VGS = 10V
2.8
7V
2.4
2
I D = 26A
1.6
I D = 13A
1.2
0.8
0
0.4
0
2
4
6
8
10
12
14
16
-50
-25
0
V D S - Volts
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Te m perature
Fig. 5. RDS(on) Norm alized to
0.5 ID25 Value vs . ID
30
3.2
VGS = 10V
27
TJ = 125∫ C
2.8
R D S ( o n ) - Normalized
25
24
21
I D - Amperes
2.4
2
1.6
18
15
12
9
6
TJ = 25∫ C
1.2
3
0
0.8
0
10
20
30
40
50
-50
60
-25
0
I D - Amperes
50
45
45
40
40
35
35
g f s - Siemens
I D - Amperes
50
30
25
TJ = 125∫ C
25∫ C
15
50
75
100
125
150
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
20
25
TC - Degrees Centigrade
-40∫ C
TJ = -40∫ C
25∫ C
125∫ C
30
25
20
15
10
10
5
5
0
0
4
4.5
5
5.5
6
V G S - Volts
© 2005 IXYS All rights reserved
6.5
7
7.5
0
5
10
15
20
25
30
I D - Amperes
35
40
45
50
IXFH 26N60P IXFQ 26N60P
IXFV 26N60PS IXFT 26N60P
IXFV 26N60P
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
80
10
70
9
VDS = 300V
8
I D = 13A
7
I G = 10mA
50
VG S - Volts
I S - Amperes
60
40
30
TJ = 125∫ C
6
5
4
3
20
TJ = 25∫ C
2
10
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
10
20
V S D - Volts
30
40
50
60
Q G - nanoCoulombs
Fig. 11. Capacitance
10000
Capacitance - picoFarads
f = 1MHz
C iss
1000
C oss
100
C rss
10
0
5
10
15
20
25
30
35
40
V D S - Volts
Fig. 12. Maxim um Transient Therm al Resistance
R ( t h ) J C - ∫C / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
0.1
1
10
70
80
IXFH 26N60P IXFQ 26N60P
IXFV 26N60PS IXFT 26N60P
IXFV 26N60P
TO-3P (IXFQ) Outline
TO-247 AD (IXFH) Outline
1
2
3
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
A
A1
L2
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220SMD (IXFV_S)
PLUS220 (IXFV) Outline
E
E1
E1
E
E1
A
A1
L2
E1
D1
D
D
L3
A3
L3
L1
L4
L
L
L1
2X b
e
c
A2
3X b
2X e
c
A2
Terminals: 1 - Gate
3 - Source
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
© 2005 IXYS All rights reserved
TO-268 (IXFT) Outline
2 - Drain
TAB - Drain
Terminals:
1 - Gate
2 - Drain
3 - Source
4 (TAB) - Drain
A
A1
A2
A3
b
c
D
D1
E
E1
e
L
L1
L2
L3
L4
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