TM FCP7N60 / FCPF7N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. • Typ. RDS(on) = 0.53Ω • Ultra low gate charge (typ. Qg = 25nC) • Low effective output capacitance (typ. Coss.eff = 60pF) This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • 100% avalanche tested D ! " G! G DS TO-220 ! " TO-220F GD S " " ! S Absolute Maximum Ratings Symbol Parameter FCP7N60 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR FCPF7N60 Unit 7 4.4 7* 4.4* A A 21 21* A 600 (Note 1) V ± 30 V Single Pulsed Avalanche Energy (Note 2) 230 mJ Avalanche Current (Note 1) 7 A EAR Repetitive Avalanche Energy (Note 1) 8.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25°C 83 0.67 TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 31 0.25 W W/°C -55 to +150 °C 300 °C *Drain current limited by maximum junction temperature Thermal Characteristics FCP7N60 FCPF7N60 Unit RθJC Symbol Thermal Resistance, Junction-to-Case Parameter 1.5 4.0 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2005 Fairchild Semiconductor Corporation FCP7N60 / FCPF7N60 Rev. A 1 www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET SuperFET Device Marking Device Package Reel Size Tape Width Quantity FCP7N60 FCP7N60 TO-220 - - 50 FCPF7N60 FCPF7N60 TO-220F - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250µA, TJ = 150°C -- 650 -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.6 -- V/°C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 7A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.53 0.6 Ω -- 6 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 3.5A gFS Forward Transconductance VDS = 40V, ID = 3.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 7A RG = 25Ω VDS = 25V, VGS = 0V, f = 1.0MHz -- 710 920 pF -- 380 500 pF -- 34 -- pF -- 22 29 pF -- 60 -- pF -- 35 80 ns -- 55 120 ns -- 75 160 ns -- 32 75 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 7A VGS = 10V (Note 4, 5) -- 23 30 nC -- 4.2 5.5 nC -- 11.5 -- nC 7 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 21 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A -- -- 1.4 V trr Reverse Recovery Time 360 -- ns Reverse Recovery Charge VGS = 0V, IS = 7A dIF/dt =100A/µs -- Qrr -- 4.5 -- µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FCP7N60 / FCPF7N60 Rev. A www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 ID , Drain Current [A] ID, Drain Current [A] 1 10 0 10 10 150°C 25°C 0 10 -55°C Notes : 1. 250µs Pulse Test 2. TC = 25°C -1 Note 1. VDS = 40V 2. 250µs Pulse Test 10 -1 10 -1 0 10 2 1 10 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR , Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 2.0 1.8 1.6 1.4 VGS = 10V 1.2 1.0 0.8 0.6 VGS = 20V 0.4 0.2 1 10 0 10 150°C 25°C Notes : 1. VGS = 0V 2. 250µs Pulse Test Note : TJ = 25°C -1 0.0 0 5 10 15 10 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3000 Ciss = Cgs + Cgd (Cds = shorted) 12 Coss = Cds + Cgd VDS = 100V VGS, Gate-Source Voltage [V] Capacitance [pF] Crss = Cgd 2000 Coss 1000 Notes : 1. VGS = 0 V Ciss 2. f = 1 MHz Crss 0 -1 10 0 10 VDS = 400V 8 6 4 2 Note : ID = 7A 1 10 0 0 VDS, Drain-Source Voltage [V] 5 10 15 20 25 QG, Total Gate Charge [nC] 3 FCP7N60 / FCPF7N60 Rev. A VDS = 250V 10 www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250µA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 3.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 TJ, Junction Temperature [°C] 2 10 1 Operation in This Area is Limited by R DS(on) 10 ms 0 Notes : 1. TC = 25°C -1 10 10 2 150 200 10 1 Operation in This Area is Limited by R DS(on) 100 us 1 ms 10 ms 10 100 ms 0 DC Notes : 1. TC = 25°C -1 10 2. TJ = 150°C 2. TJ = 150°C 3. Single Pulse 3. Single Pulse -2 10 10 100 us 1 ms DC 10 100 Figure 9-2. Maximum Safe Operating Area for FCPF7N60 ID, Drain Current [A] ID, Drain Current [A] Figure 9-1. Maximum Safe Operating Area for FCP7N60 10 50 TJ, Junction Temperature [°C] -2 0 1 2 10 10 3 10 10 10 VDS, Drain-Source Voltage [V] 0 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 10.0 ID, Drain Current [A] 7.5 5.0 2.5 0.0 25 50 75 100 125 150 TC, Case Temperature [? ] 4 FCP7N60 / FCPF7N60 Rev. A www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FCP7N60 / FCPF7N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FCP7N60 10 0 ZθJC(t), Thermal Response D = 0 .5 0 .2 N o te s : 1 . Z θ JC ( t) = 1 .5 ° C /W M a x . 0 .1 10 -1 2 . D u ty F a c to r, D = t 1 /t 2 0 .0 5 3 . T J M - T C = P D M * Z θ JC ( t) 0 .0 2 0 .0 1 PDM 10 -2 10 t1 s in g le p u ls e -5 10 -4 t2 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FCPF7N60 ZθJC(t), Thermal Response D = 0 .5 10 0 0 .2 0 .1 N o te s : 1 . Z θ JC ( t) 4 .0 ° C /W M a x. 0 .0 5 10 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ JC ( t) 0 .0 2 -1 0 .0 1 PDM t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 5 FCP7N60 / FCPF7N60 Rev. A www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp tp 6 FCP7N60 / FCPF7N60 Rev. A VDS (t) VDD DUT 10V ID (t) Time www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 7 FCP7N60 / FCPF7N60 Rev. A www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters 8 FCP7N60 / FCPF7N60 Rev. A www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET Mechanical Dimensions (Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters 9 FCP7N60 / FCPF7N60 Rev. A www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 10 FCP7N60 / FCPF7N60 Rev. A www.fairchildsemi.com FCP7N60 / FCPF7N60 600V N-Channel MOSFET TRADEMARKS