ON MGSF1N02LT1G Power mosfet Datasheet

MGSF1N02L, MVGSF1N02L
Power MOSFET
750 mAmps, 20 Volts
N−Channel SOT−23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc−dc converters and power management in portable
and battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
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750 mAMPS, 20 VOLTS
RDS(on) = 90 mW
N−Channel
3
Features
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• MVGSF Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free and are RoHS Compliant
1
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Rating
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 10 ms)
3
Drain
1
ID
IDM
750
2000
mA
PD
400
mW
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 150
°C
Thermal Resistance, Junction−to−Ambient
RqJA
300
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Total Power Dissipation @ TA = 25°C
MARKING DIAGRAM/
PIN ASSIGNMENT
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT−23
CASE 318
STYLE 21
N2 M G
G
1
Gate
2
Source
N2
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MGSF1N02LT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
MVGSF1N02LT1G*
SOT−23
(Pb−Free)
3000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1996
October, 2016 − Rev. 7
1
Publication Order Number:
MGSF1N02LT1/D
MGSF1N02L, MVGSF1N02L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
−
−
Vdc
−
−
−
−
1.0
10
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mAdc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
±100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 1.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
rDS(on)
−
−
0.075
0.115
0.090
0.130
mAdc
ON CHARACTERISTICS (Note 1)
W
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 Vdc)
Ciss
−
125
−
pF
Output Capacitance
(VDS = 5.0 Vdc)
Coss
−
120
−
Transfer Capacitance
(VDG = 5.0 Vdc)
Crss
−
45
−
td(on)
−
2.5
−
tr
−
1.0
−
td(off)
−
16
−
tf
−
8.0
−
QT
−
6000
−
pC
IS
−
−
0.6
A
Pulsed Current
ISM
−
−
0.75
−
Forward Voltage (Note 2)
VSD
−
0.8
−
V
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
(VDD = 15 Vdc, ID = 1.0 Adc,
RL = 50 W)
Turn−Off Delay Time
Fall Time
Gate Charge (See Figure 6)
ns
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
3
2.5
4V
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
VDS = 10 V
2
- 55°C
1.5
TJ = 150°C
1
0.5
1
1.5
2
2.5
3.25 V
3.5 V
2
VGS = 3.0 V
1.5
2.75 V
1
2.5 V
0.5
25°C
0
2.5
2.25 V
3
0
3.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
2
4
6
8
3
5
7
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
Figure 2. On−Region Characteristics
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2
1
9
10
MGSF1N02L, MVGSF1N02L
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
TYPICAL ELECTRICAL CHARACTERISTICS
0.2
150°C
0.18
0.16
VGS = 4.5 V
0.14
25°C
0.12
-55°C
0.1
0.08
0.06
0.04
0
0.1
0.3
0.2
0.4
0.5
0.6
0.7
0.8
0.9
1
0.14
0.13
150°C
0.12
VGS = 10 V
0.11
0.1
0.09
25°C
0.08
0.07
-55°C
0.06
0.05
0.04
0
0.2
0.4
0.6
ID, DRAIN CURRENT (AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
1.6
VGS = 10 V
ID = 2 A
1.4
1.3
VGS = 4.5 V
ID = 1 A
1.2
1.1
1
0.9
0.8
0.7
1.2
1.6
1.4
1.8
2
10
VDS = 16 V
TJ = 25°C
8
6
4
ID = 2.0 A
2
0
0.6
-55
-5
45
95
145
0
2000
1000
TJ, JUNCTION TEMPERATURE (°C)
3000
4000
5000
6000
QT, TOTAL GATE CHARGE (pC)
Figure 6. Gate Charge
Figure 5. On−Resistance Variation with Temperature
1
1000
TJ = 150°C
0.1
25°C
VGS = 0 V
f = 1 MHz
TJ = 25°C
-55°C
C, CAPACITANCE (pF)
I D , DIODE CURRENT (AMPS)
1
Figure 4. On−Resistance versus Drain Current
Figure 3. On−Resistance versus Drain Current
1.5
0.8
ID, DRAIN CURRENT (AMPS)
0.01
Ciss
100
Coss
Crss
0.001
0
0.2
0.4
0.6
10
1
0.8
0
5
10
15
VDS, DRAIN-TO-SOURCE VOLTAGE (Volts)
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
Figure 8. Capacitance
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3
20
MGSF1N02L, MVGSF1N02L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 _
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10 _
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MGSF1N02LT1/D
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