DMN2004WK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2KV "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish − Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) • • • • • • Drain SOT-323 D Gate Gate Protection Diode TOP VIEW ESD protected up to 2kV G Source TOP VIEW EQUIVALENT CIRCUIT Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Symbol VDSS VGSS Value 20 ±8 Units V V ID 540 390 mA IDM 1.5 A Symbol PD RθJA TJ, TSTG Value 200 625 -55 to +150 Units mW °C/W °C TA = 25°C TA = 85°C Steady State Pulsed Drain Current (Note 3) Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5. S @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±1 V μA μA VGS = 0V, ID = 10μA VDS = 16V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ⎯ 1.0 V RDS (ON) ⎯ 0.4 0.5 0.7 0.55 0.70 0.9 Ω |Yfs| VSD 200 0.5 ⎯ ⎯ ⎯ 1.4 ms V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 150 25 20 pF pF pF VDS = 16V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN2004WK Document number: DS30934 Rev. 4 - 2 1 of 4 www.diodes.com January 2009 © Diodes Incorporated ID, DRAIN CURRENT (A) DMN2004WK 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0.1 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 6 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN2004WK Document number: DS30934 Rev. 4 - 2 2 of 4 www.diodes.com January 2009 © Diodes Incorporated RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) DMN2004WK Tj, JUNCTION TEMPERATURE (°C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDR , REVERSE DRAIN CURRENT (A) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage 1000 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004WK Document number: DS30934 Rev. 4 - 2 3 of 4 www.diodes.com VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation January 2009 © Diodes Incorporated DMN2004WK Ordering Information (Note 6) Part Number DMN2004WK-7 Notes: Case SOT-323 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code 2006 T Month Code YM NAB 2007 U Jan 1 Feb 2 NAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) 2008 V Mar 3 Apr 4 May 5 2009 W Jun 6 2010 X Jul 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D Package Outline Dimensions A SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm B C G H K M J L D Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN2004WK Document number: DS30934 Rev. 4 - 2 4 of 4 www.diodes.com January 2009 © Diodes Incorporated