CEL NE687M03 Necs npn silicon transistor Datasheet

NEC's
NE687M03
NPN SILICON TRANSISTOR
FEATURES
•
•
•
OUTLINE DIMENSIONS (Units in mm)
NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
fT = 14 GHz
LOW NOISE FIGURE:
NF = 1.4 dB at 2 GHz
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
1.4 ±0.1
0.45
(0.9)
0.45
+0.1
0.3 -0
3
1
+0.1
0.2 -0
DESCRIPTION
NEC's NE687M03 transistor is designed for low noise, high
gain, and low cost requirements. This high fT part is well suited
for very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M03" package is ideal for today's
portable wireless applications. The NE687 is also available in
six different low cost plastic surface mount package styles.
0.59±0.05
+0.1
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NE687M03
2SC5436
M03
UNITS
MIN
TYP
GHz
GHz
9
7
14
12
fT
Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
NF
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz
dB
dB
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
dB
dB
|S21E|2
hFE2
Forward Current Gain at VCE = 2 V, IC = 20 mA
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
μA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
μA
CRE3
Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz
pF
1.3
1.3
8.5
6
MAX
2
2
10
9.0
70
130
0.1
0.1
0.4
0.8
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
NE687M03
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
5
VCEO
Collector to Emitter Voltage
V
3
VEBO
Emitter to Base Voltage
V
2
30
IC
Collector Current
mA
PT
Total Power Dissipation
mW
90
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
ORDERING INFORMATION
PART NUMBER
QUANTITY
NE687M03-A
NE687M03-T1-A
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
20
200 µA
180 µA
160 µA
15
140 µA
120 µA
10
100 µA
80 µA
60 µA
5
D.C. CURRENT GAIN
vs. COLECTOR CURRENT
500
DC Current Gain, hFE
Collector Current, IC (mA)
25
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
200
100
VCE = 2 V
VCE = 1 V
50
20
40 µA
IB = 20 µA
0
0
2.2
2.4
10
2.6
Collector to Emmiter Voltage, VCE (V)
Collector Current, IC (mA)
VCE = 2V
40
30
20
10
0
0.5
Base to Emmiter Voltage, VBE (V)
2
5
10
20
Collector Current, IC (mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
1
1.0
50
100
NE687M03
NE687M03 NONLINEAR MODEL
SCHEMATIC
Q1
CCBPKG
CCB
LCX
LBX
Collector
LB
Base
CCE
LE
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS(1)
Parameters
Q1
Parameters
Q1
IS
302.3e-18
MJC
0.53
BF
104
XCJC
0.27
NF
1.038
CJS
0
VAF
10
VJS
0.75
IKF
0.370
MJS
0
ISE
1e-6
FC
0.37
NE
31.19
TF
5e-12
BR
17.54
XTF
8
NR
1.023
VTF
0.06
VAR
30
ITF
1.0
IKR
8.369e-3
PTF
69.1
ISC
81.93e-12
TR
1.e-9
NC
4.986
EG
1.11
RE
0.80
XTB
0
RB
11.10
XTI
3
RBM
2.46
KF
0
IRB
17e-3
AF
1
RC
4.477
CJE
0.415e-12
VJE
0.68
MJE
0.53
CJC
0.102e-12
VJC
0.8
UNITS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
ADDITIONAL PARAMETERS
Parameters
CCB
CCE
LB
LE
CCBPKG
CCEPKG
LBX
687M03
0.26e-12
0.19e-12
0.4e-9
0.7e-9
0.08e-12
0.08e-12
0.12e-9
LCX
LEX
0.10e-9
0.12e-9
MODEL TEST CONDITIONS
Frequency: 0.1 to 5.0 GHz
Bias:
VCE = 0.5 V to 2.5 V, IC = 0.5 mA to 30 mA
Date:
11/98
hFE = 108 at 2 V, 20 mA
(1) Gummel-Poon Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
04/26/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
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per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
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