DMN55D0UT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • Mechanical Data • • Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate to 2kV Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-523 Case Material: Molded Plastic, "Green" Molding Compound, Note 6. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.002 grams (approximate) • • • • • • • Drain SOT-523 D Gate TOP VIEW ESD PROTECTED, 2kV Gate Protection Diode G Source TOP VIEW Equivalent Circuit Maximum Ratings S @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 1) Continuous Symbol VDSS VGSS ID IDM Value 50 ±12 160 560 Units V V mA mA Symbol PD RθJA TJ, TSTG Value 200 625 -55 to +150 Units mW °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS 50 ⎯ ⎯ ⎯ ⎯ 10 V μA IGSS ⎯ ⎯ 1.0 μA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS (ON) gFS 0.7 ⎯ ⎯ 180 0.8 3.1 4 ⎯ 1.0 4 5 ⎯ mS Ciss Coss Crss ⎯ ⎯ ⎯ 25 5 2.1 ⎯ ⎯ ⎯ pF pF pF Gate-Body Leakage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5.0 V Ω Test Condition VGS = 0V, ID = 250μA VDS = 50V, VGS = 0V VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4V, ID = 100mA VGS = 2.5V, ID = 80mA VDS = 10V, ID = 100mA, f = 1.0KHz VDS = 10V, VGS = 0V, f = 1.0MHz Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Short duration pulse test used to minimize self-heating effect. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN55D0UT Document number: DS31330 Rev. 3 - 2 1 of 4 www.diodes.com March 2008 © Diodes Incorporated DMN55D0UT 0.8 0.5 VGS = 10V 0.7 VDS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.5 VGS = 3.0V 0.4 VGS = 2.5V 0.3 0.2 TA = 85°C TA = 25°C TA = -55°C 0.3 TA = 150°C TA = 125°C 0.2 0.1 0.1 VGS = 1.5V VGS = 1.0V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 0 5 4 10 VGS = 2.5V VGS = 4.0V 1 0.001 0.01 0.1 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 2 3 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 2.0 TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C 1 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 35 1.8 30 VGS = 4V ID = 100mA 1.6 1.4 C, CAPACITANCE (pF) RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) NEW PRODUCT 0.4 VGS = 4.5V 0.6 VGS = 2.5V ID = 80mA 1.2 1.0 0.8 25 Ciss 20 f = 1MHz VGS = 0V 15 10 5 0.6 0.4 -50 Document number: DS31330 Rev. 3 - 2 Crss 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN55D0UT Coss 2 of 4 www.diodes.com 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 40 March 2008 © Diodes Incorporated DMN55D0UT 1 1.0 0.9 IS, SOURCE CURRENT (A) NEW PRODUCT VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.1 ID = 250µA 0.8 0.7 0.1 TA = 150°C TA = 125°C 0.01 TA = 85°C TA = 25°C 0.001 T A = -55°C 0.6 0.5 -50 0.0001 0.1 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.3 0.5 0.7 0.9 1.1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 625°C/W D = 0.02 D = 0.01 0.01 P(pk) D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (s) 1 10 100 Fig. 9 Transient Thermal Response Ordering Information (Note 5) Part Number DMN55D0UT -7 Notes: Case SOT-523 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information NAC Date Code Key Year Code 2007 U YM NAC = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September 2008 V 2009 W 2010 X 2011 Y 2012 Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DMN55D0UT Document number: DS31330 Rev. 3 - 2 3 of 4 www.diodes.com March 2008 © Diodes Incorporated DMN55D0UT Package Outline Dimensions A B C TOP VIEW NEW PRODUCT SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 ⎯ ⎯ G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0° 8° α ⎯ All Dimensions in mm G H K M N J L D Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN55D0UT Document number: DS31330 Rev. 3 - 2 4 of 4 www.diodes.com March 2008 © Diodes Incorporated