Central CMXSH-3 Surface mount triple isolated silicon schottky diode Datasheet

CMXSH-3
SURFACE MOUNT
TRIPLE ISOLATED
SILICON SCHOTTKY DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXSH-3 type
contains three (3) Isolated Schottky Silicon Switching
Diodes, manufactured by the epitaxial planar process,
epoxy molded in a SUPERmini™ surface mount
package, and designed for applications requiring low
forward voltage drop.
MARKING CODE: XH3
SOT-26 CASE
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
UNITS
VRRM
IF
30
V
100
mA
IFRM
IFSM
350
mA
750
mA
PD
TJ, Tstg
350
mW
-65 to +150
°C
ΘJA
357
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR=25V
90
500
nA
IR
25
100
μA
BVR
VR=25V, TA=100°C
IR=100μA
VF
IF=2.0mA
0.29
0.33
V
VF
IF=15mA
0.40
0.45
V
VF
IF=100mA
0.74
1.00
CT
VR=1.0V, f=1.0MHz
7.0
trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
30
V
V
pF
5.0
ns
R5 (12-February 2010)
CMXSH-3
SURFACE MOUNT
TRIPLE ISOLATED
SILICON SCHOTTKY DIODES
SOT-26 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D1
2) Anode D2
3) Anode D3
4) Cathode D3
5) Cathode D2
6) Cathode D1
MARKING CODE: XH3
R5 (12-February 2010)
w w w. c e n t r a l s e m i . c o m
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