DT455N N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 A B D C D D G E S P G R H J K L M S N Mechanical Data · · SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above Maximum Ratings Dim Min Max A 6.30 6.71 B 2.90 3.10 C 6.71 7.29 D 3.30 3.71 2.35 E 2.22 G 0.92 1.00 H 1.10 1.30 J 1.55 1.80 K 0.025 0.102 L 0.66 0.79 M 4.55 4.70 N — 10° P 10° 16° R 0.254 0.356 S 10° 16° All Dimensions in mm 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS 20 V Note 1a Continuous Pulsed ID ±11.5 ±40 A Note 1a Note 1b Note 1c Pd 3.0 1.3 1.1 W Tj, TSTG -65 to +150 °C Symbol Value Unit RQJA 42 °C/W RQJC 12 °C/W Drain Current Maximum Power Dissipation Operating and Storage Temperature Range Thermal Characteristics Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Notes: Note 1 1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design. 2 1a. With 1 in oz 2 oz. copper mounting pad RQJA = 42°C/W. 2 1b. With 0.0066 in oz 2 oz. copper mounting pad RQJA = 95°C/W. 2 1c. With 0.0123 in oz 2 oz. copper mounting pad RQJA = 110°C/W. DS11609 Rev. C-4 1 of 4 DT455N Electrical Characteristics 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Conditions BVDSS 30 — — V VGS = 0V, ID = 250µA IDSS — — 1.0 10 µA VDS = 24V, VGS = 0V Gate-Body Leakage, Forward IGSSF — — 100 nA VGS = 20V, VDS = 0V Gate-Body Leakage, Reverse IGSSR — — -100 nA VGS = -20V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Tj = 125°C VGS(th) 1.0 0.7 1.5 0.9 3.0 2.2 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance Tj = 125°C RDS (ON) — 0.013 0.019 0.018 0.015 0.03 0.02 W VGS = 10V, ID = 11.5A VGS = 10V, ID = 11.5A VGS = 4.5V, ID = 10A ID(ON) 30 15 — — A VGS = 10V, VDS = 5.0V VGS = 4.5V, VDS = 5.0V gFS — 26 — m VDS = 10V, ID = 11.5A Input Capacitance CISS — 1220 — pF Output Capacitance COSS — 715 — pF Reverse Transfer Capacitance CRSS — 280 — pF SWITCHING CHARACTERISTICS (Note 2) tD(ON) Turn-On Delay Time OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Tj =55°C On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS VDS = 15V, VGS = 0V f = 1.0MHz — 11 20 ns Turn-On Rise Time tr — 16 30 ns Turn-Off Delay Time tD(OFF) — 48 80 ns Turn-Off Fall Time tf — 40 70 ns Total Gate Charge Qg — 46 61 nC Gate-Source Charge Qgs — 4.0 — nC — nC 2.5 A 1.2 V VGS = 0V, IS = 2.5A (Note 2) 140 ns VGS = 0V, IF = 2.5A dlp/dt = 100 A/µs Qgd — 11 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode IS — — Forward Current VSD Drain-Source Diode Forward Voltage — 0.845 Gate-Drain Charge Reverse Recovery Time Notes: trr — — VDD = 15V, ID = 1.0A VGEN = 10V, RGEN = 6.0W VDS = 10V. ID = 11.5A. VGS = 10V 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%. DS11609 Rev. C-4 2 of 4 DT455N VGS = 10V 4.5 ID, DRAIN-SOURCE CURRENT (A) 6.0 4.0 5.0 32 3.5 24 16 3.0 8 0 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) 3.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 VGS = 3.5V 2.0 4.0 4.5 1.5 5.0 6.0 10 1.0 0.5 0 8 16 24 32 40 ID, DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage and Drain Current Fig. 1, On-Region Characteristics 1.5 40 I D = 11.5A VGB = 10V TJ = -55 C VDS = 10V 1.25 ID, DRAIN CURRENT (A) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 1.0 0.75 0.5 125 C 25 C 30 20 10 0 -50 -25 0 25 50 75 100 125 150 0.8 1.6 2.4 3.2 4 T j , JUNCTION TEMPERATURE (°C) VGS, GATE TO SOURCE VOLTAGE (V) Fig. 3, On-Resistance vs Temperature Fig. 4, Transfer Characteristics DS11609 Rev. C-4 3 of 4 DT455N 30 ID, DRAIN CURRENT (A) 10 IT ) ON LIM 10 0 ( DS R s 1m s 10 ms 10 0m 1s 10 s 1 s dc 0.1 VGS = 10V SINGLE PULSE RQJA = 42 C TA = 25 C 0.01 0.1 1 10 50 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operating Area 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 RQJA (t) = r(t) b RQJA RQJA = See Note 1c 0.05 0.02 P(pk) 0.01 0.01 Single Pulse t1 t2 TJ - TA = PPK b RQJA(t) Duty Cycle, D = t1/t2 0.001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 3000 t1, SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves DS11609 Rev. C-4 4 of 4 DT455N