MBR3035CT thru MBR30150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-220AB MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR MBR MBR MBR MBR MBR MBR 3035 3045 3050 3060 3090 CT CT CT CT CT CT CT 30100 30150 UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 V Maximum RMS voltage VRMS 24 31 35 42 63 70 105 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 V Maximum average forward rectified current IF(AV) 30 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 30 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF=15A, TJ=25℃ IF=15A, TJ=125℃ IF=30A, TJ=25℃ IF=30A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ VF IR Voltage rate of change (Rated VR) dV/dt Typical thermal resistance RθJC Operating junction temperature range Storage temperature range 1.0 0.5 A 0.7 0.77 0.84 0.95 0.6 0.67 0.70 0.92 0.82 - 0.94 1.02 0.73 - 0.82 0.98 0.2 15 0.1 7.5 10 5 10000 1.0 V mA V/μs 1.5 O C/W TJ - 55 to +150 O C TSTG - 55 to +150 O C Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Document Number: DS_D1308040 Version: J13 MBR3035CT thru MBR30150CT Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 PART NO. QUALIFIED Prefix "H" MBR30xxCT GREEN COMPOUND PACKING CODE CODE Suffix "G" C0 PACKAGE PACKING TO-220AB 50 / Tube Note 1: "xx" defines voltage from 35V (MBR3035CT) to 150V (MBR30150CT) EXAMPLE PREFERRED P/N PART NO. MBR3060CT C0 AEC-Q101 GREEN COMPOUND PACKING CODE QUALIFIED MBR3060CT C0 MBR3060CT C0G MBR3060CT C0 MBR3060CTHC0 MBR3060CT H DESCRIPTION CODE G Green compound C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG.1- FORWARD CURRENT DERATING CURVE 30 25 20 15 10 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 5 0 0 50 100 150 FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD A CURRENT (A) 35 300 8.3ms Single Half Sine Wave JEDEC Method 250 200 150 100 50 0 1 10 CASE TEMPERATURE (oC) 100 MBR3035CT-MBR3045CT MBR3050CT-MBR3060CT 1 MBR30150CT MBR3090CT-MBR30100CT 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE (V) 0.8 0.9 FIG. 4- TYPICAL REVERSE CHARACTERISTICS PER LEG 100 INSTANTANEOUS REVERSE CURRENT (mA) IF-INSTANTANEOUS FORWARD CURRENT (A) FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 10 100 NUMBER OF CYCLES AT 60 Hz 1 MBR3035CT-MBR3045CT MBR3050CT-MBR30150CT 10 TJ=125℃ 1 TJ=75℃ 0.1 TJ=25℃ 0.01 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS_D1308040 Version: J13 MBR3035CT thru MBR30150CT Taiwan Semiconductor FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG FIG. 5- TYPICAL JUNCTION CAPACITANCE PER LEG MBR3035CT-MBR3045CT MBR3050CT-MBR3060CT MBR3090CT-MBR30150CT 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 1000 100 0.1 1 10 100 10 1 0.1 0.01 0.1 REVERSE VOLTAGE (V) 1 10 100 T-PULSE DURATION. (sec) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.50 - 0.413 B 2.62 3.44 0.103 0.135 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 3.54 4.00 0.139 0.157 F 14.60 16.00 0.575 0.630 G 13.19 14.79 0.519 0.582 H 2.41 2.67 0.095 0.105 I 4.42 4.76 0.174 0.187 J 1.14 1.40 0.045 0.055 K 5.84 6.86 0.230 0.270 L 2.20 2.80 0.087 0.110 M 0.35 0.64 0.014 0.025 MARKING DIAGRAM P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1308040 Version: J13 MBR3035CT thru MBR30150CT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1308040 Version: J13