DMN2004VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Gate up to 2kV "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) • • • • • • SOT-563 ESD protected up to 2kV TOP VIEW BOTTOM VIEW D2 G1 S1 S2 G2 D1 TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Steady State Symbol VDSS VGSS TA = 25°C TA = 85°C Pulsed Drain Current (Note 3) Thermal Characteristics 1. 2. 3. 4. Symbol PD RθJA TJ, TSTG Value 250 500 -65 to +150 Units mW °C/W °C ID mA A @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: Units V V IDM Value 20 ±8 540 390 1.5 Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN2004VK Document number: DS30865 Rev. 4 - 2 1 of 6 www.diodes.com July 2010 © Diodes Incorporated DMN2004VK Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±1 V μA μA VGS = 0V, ID = 10μA VDS = 16V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ⎯ 1.0 V 0.55 0.70 0.9 Ω VDS = VGS, ID = 250μA VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA Static Drain-Source On-Resistance RDS (ON) ⎯ 0.4 0.5 0.7 Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time |Yfs| VSD 200 0.5 ⎯ ⎯ ⎯ 1.4 ms V Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 150 25 20 pF pF pF VDS = 16V, VGS = 0V f = 1.0MHz td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ 8.0 13.3 53.5 36.1 ⎯ ⎯ ⎯ ⎯ ns ns ns ns VDD = 10V, RL = 47Ω, ID = 200mA. VGEN = 4.5V, RG = 10Ω 5. Short duration pulse test used to minimize self-heating effect. ID, DRAIN CURRENT (A) Notes: 0 0 4 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMN2004VK Document number: DS30865 Rev. 4 - 2 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage 2 of 6 www.diodes.com July 2010 © Diodes Incorporated DMN2004VK RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0.1 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current VGS = 5V Pulsed T A = 125°C TA = 150°C TA = 85°C TA = -55° C TA = 25°C TA = 0°C TA = -25° C 6 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage DMN2004VK Document number: DS30865 Rev. 4 - 2 3 of 6 www.diodes.com Tj, JUNCTION TEMPERATURE (°C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature July 2010 © Diodes Incorporated |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) IDR, REVERSE DRAIN CURRENT (A) DMN2004VK 1,000 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation Ordering Information (Note 6) Part Number DMN2004VK-7 Notes: Case SOT-563 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information NAB YM Date Code Key Year Code Month Code 2006 T Jan 1 DMN2004VK Document number: DS30865 Rev. 4 - 2 2007 U Feb 2 Mar 3 NAB = Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) 2008 V Apr 4 May 5 2009 W Jun 6 4 of 6 www.diodes.com 2010 X Jul 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D July 2010 © Diodes Incorporated DMN2004VK Package Outline Dimensions A B SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X DMN2004VK Document number: DS30865 Rev. 4 - 2 5 of 6 www.diodes.com July 2010 © Diodes Incorporated DMN2004VK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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